Journal of Crystal Growth

Journal of Crystal Growth, Vol.458 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (23 articles)

1 - 7	Growth of lattice-matched GaInAsP grown on vicinal GaAs(001) substrates within the miscibility gap for solar cells Oshima R, France RM, Geisz JF, Norman AG, Steiner MA
8 - 15	Non-classical crystallization of silicon thin films during hot wire chemical vapor deposition Jung JS, Lee SH, Kim DS, Kim KS, Park SW, Hwang NM
16 - 26	Travelling-solvent floating-zone growth of the dilutely Co-doped spin-ladder compound Sr-14(Cu, Co)(24)O-41 Bag R, Karmakar K, Singh S
27 - 30	Behavior of crystal defects in synthetic type-IIa single-crystalline diamond at high temperatures under normal pressure Tatsumi N, Tamasaku K, Ito T, Sumiya H
31 - 36	Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket Zhao WH, Liu LJ
37 - 43	Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents Komatsu N, Mitani T, Hayashi Y, Kato T, Harada S, Ujihara T, Okumura H
44 - 52	Crystal growth of aragonite in the presence of phosphate Tadier S, Rokidi S, Rey C, Combes C, Koutsoukos PG
53 - 59	An investigation of near-infrared photoluminescence from AP-MOVPE grown InSb/GaSb quantum dot structures Ahia CC, Tile N, Urgessa ZN, Botha JR, Neethling JH
60 - 65	The effect of glycine on the growth of calcium carbonate in alkaline silica gel Gan X, He KH, Qian BS, Deng Q, Lu LX, Wang Y
66 - 71	Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot Sun JF, He QX, Ban BY, Bai XL, Li JW, Chen J
72 - 79	A new heating stage for high Temperature/low fO(2) conditions Tissandier L, Florentin L, Lequin D, Baillot P, Faure F
80 - 86	Modelling and experiments for the convecto-diffusive removal of impurities from the solidification front Altenberend J, Delannoy Y, Nehari A, Chichignoud G, Zaidat K
87 - 95	Codeposited pentacene:perfluoropentacene grown on SiO2: A microstructural study by transmission electron microscopy Felix R, Volz K, Gries KI
96 - 102	Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst Mavel A, Chauvin N, Regreny P, Patriarche G, Masenelli B, Gendry M
103 - 109	Preparation of a 1:1 cocrystal of genistein with 4,4'-bipyridine Zhang YN, Yin HM, Zhang Y, Zhang DJ, Su X, Kuang HX
110 - 114	The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device Ji L, Tan M, Ding C, Honda K, Harasawa R, Yasue Y, Wu Y, Dai P, Tackeuchi A, Bian L, Lu S, Yang H
115 - 119	Effects of cooling interval and MnO2, TiO2, CdO, NiO additions on spheluritic willemite crystals Coskun ND, Uz V, Issi A, Genc S, Caki M
120 - 128	Characterization of the loss of the dislocation-free growth during Czochralski silicon pulling Lanterne A, Gaspar G, Hu Y, Ovrelid E, Di Sabatino M
129 - 132	Some remarks on cooling curves as a principle tool for solidification characterization Ghomashchi R, Nafisi S
133 - 139	Effect of growth promoters on chemistry synthesis of Cr3C2 nanowhiskers from water-soluble precursors Yang RS, Jin YZ, Zhang ZQ, Liu DL
140 - 148	The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor Gkinis PA, Aviziotis IG, Koronaki ED, Gakis GP, Boudouvis AG
149 - 153	Unequal growth of twinned variants in boron-rich fivefold twinned nanowires Yu ZY, Jiang J, Zhu J
154 - 165	On the effect of thermodiffusion on solute segregation during the growth of semiconductor materials by the vertical Bridgman method Ben Sassi M, Kaddeche S, Lappa M, Millet S, Henry D, Ben Hadid H