1 - 5 |
MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers Grendysa J, Tomaka G, Sliz P, Becker CR, Trzyna M, Wojnarowska-Nowak R, Bobko E, Sheregii EM |
6 - 12 |
Single crystal monolayer MoS2 triangles with wafer-scale spatial uniformity by MoO3 pre-deposited chemical vapor deposition Cheng ZF, Xia MG, Hu RX, Liang CP, Liang GY, Zhang SL |
13 - 17 |
Multiferroic BiFeO3 thin films and nanodots grown on highly oriented pyrolytic graphite substrates Shin HW, Son JY |
18 - 27 |
Solvent effects on the crystal growth structure and morphology of the pharmaceutical dirithromycin Wang Y, Liang ZZ |
28 - 33 |
Preparation of poly-Si films by inverted AIC process on graphite substrate Wei LS, Chen NF, He K, Wang CJ, Bai YM, Chen JK |
34 - 42 |
The effects of impurity on the stability of Horizontal Ribbon Growth Ke J, Khair AS, Ydstie BE |
43 - 50 |
Theoretical analysis to interpret projected image data from in-situ 3-dimensional equiaxed nucleation and growth Mooney RP, McFadden S |
51 - 55 |
Improvement on p-type CVD diamond semiconducting properties by fabricating thin heavily-boron-doped multi-layer clusters isolated each other in unintentionally boron-doped diamond layer Maida O, Tabuchi T, Ito T |
56 - 61 |
Surface growth by cluster particles: Effects of diffusion and cluster's shape Madadi Z, Hassanibesheli F, Esmaeili S, Hedayatifar L, Masoudi AA |
62 - 66 |
Growth and characterization of Na2Mo2O7 crystal scintillators for rare event searches Pandey IR, Kim HJ, Kim YD |
67 - 73 |
Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy Liudi Mulyo A, Konno Y, Nilsen JS, van Helvoort ATJ, Fimland BO, Weman H, Kishino K |
74 - 77 |
Growth and properties of wide bandgap (MgSe)(n)(ZnxCd1-xSe)(m) short-period superlattices Garcia TA, Tamargo MC |
78 - 84 |
A comparative study of heterostructured CuO/CuWO4 nanowires and thin films Polyakov B, Kuzmin A, Vlassov S, Butanovs E, Zideluns J, Butikova J, Kalendarev R, Zubkins M |
85 - 89 |
Temperature and emissivity measurements at the sapphire single crystal fiber growth process Bufetova GA, Rusanov SY, Seregin VF, Pyrkov YN, Tsvetkov VB |
90 - 95 |
Characterization and optimization of sputtered AlN buffer layer on r-plane sapphire substrate to improve the crystalline quality of nonpolar a-plane GaN Jinno D, Otsuki S, Sugimori S, Daicho H, Iwaya M, Takeuchi T, Kamiyama S, Akasaki I |
96 - 101 |
Bridgman growth and scintillation properties of calcium tungstate single crystal Wang ZH, Jiang LW, Chen YP, Chen P, Chen HB, Mao RH |
102 - 107 |
Crystal growth of HVPE-GaN doped with germanium Iwinska M, Takekawa N, Ivanov VY, Amilusik M, Kruszewski P, Piotrzkowski R, Litwin-Staszewska E, Lucznik B, Fijalkowski M, Sochacki T, Teisseyre H, Murakami H, Bockowski M |
108 - 114 |
Growth and characterization of n-AlGaN 1-D structures with varying Al composition using u-GaN seeds Kang S, Chatterjee U, Um DY, Seo IS, Lee CR |
115 - 118 |
Annealing effect of the InAs dot-in-well structure grown by MBE Zhao XY, Wang P, Cao CF, Yan JY, Zha FX, Wang HL, Gong Q |
119 - 125 |
Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial Guo JQ, Yang Y, Raghothamachar B, Kim T, Dudley M, Kim J |
126 - 131 |
Towards optimization of ACRT schedules applied to the gradient freeze growth of cadmium zinc telluride Divecha MS, Derby JJ |
132 - 140 |
Morphological diversity of nitroguanidine crystals with enhanced mechanical performance and thermodynamic stability Luo ZL, Cui YD, Dong WB, Xu QP, Zou GX, Kang C, Hou BH, Chen S, Gong JB |
141 - 144 |
Growth of epitaxially stabilized, non-cubic Gd2O3 on silicon(111) substrates Moellers M, Margenfeld C, Wietler TF, Osten HJ |
145 - 147 |
Solution growth and scintillation properties of 9-phenylcarbazole van Loef EV, Markosyan G, Shirwadkar U, McClish M, Shah KS |
148 - 153 |
High-pressure growth and characterization of bulk MnAs single crystals Zhigadlo ND |
154 - 163 |
Large size crystal growth and structural, thermal, optical and electrical properties of KCl1-xBrx mixed crystals Guo L, Jin WZ, Chen ZK, Liu JH, Murugasen P, Zeng FM, Mahadevan CK |
164 - 169 |
Steering a crystallization process to reduce crystal polydispersity; case study of insulin crystallization Nanev CN, Petrov KP |
170 - 174 |
Experimental research of phase transitions in a melt of high-purity aluminum Vorontsov VB, Pershin VK |