| 1 - 7 |
Monte Carlo simulation of induction time and metastable zone width; stochastic or deterministic?
Kubota N |
| 8 - 18 |
Three dimensional modelling of grain boundary interaction and evolution during directional solidification of multi-crystalline silicon
Jain T, Lin HK, Lan CW |
| 19 - 27 |
Effects of withdrawal rate and starter block size on crystal orientation of a single crystal Ni-based superalloy
Rezaei M, Kermanpur A, Sadeghi F |
| 28 - 40 |
Towards establishing a combined rate law of nucleation and crystal growth - The case study of gypsum precipitation
Rendel PM, Gavrieli I, Wolff-Boenisch D, Ganor J |
| 41 - 48 |
Molecular beam epitaxial growth, transmittance and photoluminescence spectra of zinc-blende CdTe thin films with high-quality on perovskite SrTiO3 (111) substrates
Song K, Zhu XT, Tang K, Bai W, Zhu LQ, Yang J, Zhang YY, Tang XD, Chu JH |
| 49 - 53 |
Nanowire growth from the viewpoint of the thin film polylayer growth theory
Kashchiev D |
| 54 - 68 |
Visual observation of gas hydrates nucleation and growth at a water - organic liquid interface
Stoporev AS, Semenov AP, Medvedev VI, Sizikov AA, Gushchin PA, Vinokurov VA, Manakov AY |
| 69 - 72 |
Crystal growth and piezoelectric properties of Ca3Ta(Ga0.9Sc0.1)(3)Si2O14 bulk single crystal
Igarashi Y, Yokota Y, Ohashi Y, Inoue K, Yamaji A, Shoji Y, Kamada K, Kurosawa S, Yoshikawa A |
| 73 - 77 |
Single crystals with advanced laser properties LiCaAlF6:Ce3+ grown by Bridgman technique
Shavelev AA, Nizamutdinov AS, Marisov MA, Farukhshin II, Morozov OA, Rakhimov NF, Lukinova EV, Korableva SL, Semashko VV |
| 78 - 85 |
Thermodynamic design of a high temperature chemical vapor deposition process to synthesize alpha-SiC in Si-C-H and Si-C-H-Cl systems
Kang YR, Yoo CH, Nam DH, Lee MH, Seo WS, Hong S, Jeong SM |
| 86 - 89 |
Molecular beam epitaxial growth of zinc blende MgS on GaAs (211)B substrates
Zhu J, Eldose NM, Mavridi N, Prior KA, Moug RT |
| 90 - 95 |
Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride
Rice A, Allerman A, Crawford M, Beechem T, Ohta T, Spataru C, Figiel J, Smith M |
