Journal of Crystal Growth

Journal of Crystal Growth, Vol.505 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (14 articles)

1 - 4	Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG
5 - 9	Melting of tetrahedrally bonded semiconductors: "anomaly" of the phase diagram of GaN? Porowski S, Sadovyi B, Karbovnyk I, Gierlotka S, Rzoska SJ, Petrusha I, Stratiichuk D, Turkevich V, Grzegory I
10 - 14	Effect of annealing temperature on the characteristics of Pt/CH3NH3PbI3 contact Luan SZ, Pang TQ, Wang YC, Jia RX
15 - 18	Sulfur passivation of 3C-SiC thin film Su JN, Yang Y, Zhang XH, Wang H, Zhu LX
19 - 25	Coupling of CFD and population balance modelling for a continuously seeded helical tubular crystallizer Sulttan S, Rohani S
26 - 32	Role of reducing agent and self-sacrificed copper-thiourea complex in the synthesis of precisely controlled Cu2-xS microtubes Patel TA, Balasubramanian C, Panda E
33 - 37	Effect of annealing temperature on morphology and structure of CuO nanowires grown by thermal oxidation method Tran TH, Nguyen MH, Nguyen THT, Dao VPT, Nguyen PM, Nguyen VT, Pham NH, Le VV, Sai CD, Nguyen QH, Nguyen TT, Ho KH, Doan QK
38 - 43	Investigation of the Nd2O3-Lu2O3-Sc2O3 phase diagram for the preparation of perovskite-type mixed crystals NdLu1-xScxO3 Hirsch T, Guguschev C, Kwasniewski A, Ganschow S, Klimm D
44 - 51	Room-temperature epitaxy of metal thin films on tungsten diselenide Cooley KA, Alsaadi R, Gurunathan RL, Domask AC, Kerstetter L, Saidi WA, Mohney SE
52 - 58	Thermodynamics of oxidation and reduction during the growth of metal catalyzed silicon nanowires Nebol'sin VA, Johansson J, Suyatin DB, Spiridonov BA
59 - 61	Influence on curvature induced stress to the flatband voltage and interface density of 4H-SiC MOS structure Xu HY, Wan CP, Sang L, Ao JP
62 - 68	Efficiency improvement of TiO2 nanowire arrays based dye-sensitized solar cells through further enhancing the specific surface area Ni SM, Wang DB, Guo FY, Jiao SJ, Zhang Y, Wang JZ, Wang B, Yuan LF, Zhang L, Zhao LC
69 - 73	Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN Mogilatenko A, Knauer A, Zeimer U, Netzel C, Jeschke J, Unger RS, Hartmann C, Wollweber J, Dittmar A, Juda U, Weyers M, Bickermann M
74 - 81	Analysis of the structural, anisotropic elastic and electronic properties of beta-Ga2O3 with various pressures Luan SZ, Dong LP, Jia RX