Journal of Crystal Growth

Journal of Crystal Growth, Vol.506 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (34 articles)

1 - 7	Measurement and evaluation of the defects in Cd1-xZnxTe materials by observing their etch pits in real time Yu HX, Yang JR, Zhang JJ, Xu C, Sun SW, Zhou CH
8 - 13	Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties Zikova M, Hospodkova A, Pangrac J, Hubacek T, Oswald J, Kuldova K, Hajek F, Ledoux G, Dujardin C
14 - 18	Study of a new type nominal "washboard-like" triangular defects in 4H-SiC 4 degrees off-axis (0001) Si-face homoepitaxial layers Hu JC, Jia RX, Niu YX, Zang Y, Pu HB
19 - 23	Growth mechanism of polycrystalline CsI(Tl) films on glass and single crystal Si substrates Guo LN, Liu S, Wang TY, Tan XC, Lu RG, Zhang SJ, Liu Y, Zhong ZY, Falco CM
24 - 29	Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD Niass MI, Zang JW, Lu ZQ, Du ZQ, Chen X, Qu YP, Wang F, Liu YH
30 - 35	Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy Wu YZ, Bin L, Li ZH, Tao T, Xie ZL, Xiu XQ, Chen P, Chen DJ, Lu H, Shi Y, Zhang R, Zheng YD
36 - 39	Vanishing biexciton binding energy from stacked, MOVPE grown, site-controlled pyramidal quantum dots for twin photon generation Moroni ST, Varo S, Juska G, Chung TH, Gocalinska A, Pelucchi E
40 - 44	Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition Miyoshi M, Yamanaka M, Egawa T, Takeuchi T
45 - 54	Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD Anandan D, Kakkerla RK, Yu HW, Ko HL, Nagarajan V, Singh SK, Lee CT, Chang EY
55 - 60	Dynamic instability of the steady state of a planar front during non-equilibrium solidification of binary alloys Reuther K, Galenko PK, Rettenmayr M
61 - 70	Single- and dual-variant atomic ordering in GaAsP compositionally graded buffers on GaP and Si substrates France RM, Feifel M, Belz J, Beyer A, Volz K, Ohlmann J, Lackner D, Dimroth F
71 - 78	Impact of bacteria on aggregation of crystalline and amorphous components of infectious urinary stones Prywer J, Torzewska A
79 - 82	Growth, structural, optical, thermal and dielectric properties of (L)-glutamic acid hydrochloride crystal for optoelectronic device applications Aarthi J, Dhanasekaran P
83 - 90	3D numerical design of the thermal field before seeding in an edge-defined film-fed growth system for beta-Ga(2)O(3 )ribbon crystals Le CC, Li ZY, Mu WX, Jia ZT, Liu LJ
91 - 96	Estimation of gamma/gamma ' interfacial energy in Ni-Co base superalloy TMW-4M3 Hara T, Kobayashi S, Ueno T, Oikawa K
97 - 101	Specifically designed concentration profiles created by sudden velocity changes during directional solidification Engelhardt H, Mey D, Lippmann S, Liu DM, Kiefer S, Rettenmayr M
102 - 107	Nucleation and morphology of sodium molybdate dihydrate from NaOH solution Liu Y, Zou XW, Duan DP, Luo LJ, Chen SM, Zhong L
108 - 113	Reduction of morphological defects in 4H-SiC epitaxial layers Li Y, Zhao ZF, Yu L, Wang Y, Zhou P, Niu YX, Li ZH, Chen YF, Han P
114 - 116	Heteroepitaxial 3C-SiC on Si (100) with flow-modulated carbonization process conditions Li Y, Zhao ZF, Yu L, Wang Y, Yin ZJ, Li ZH, Han P
117 - 121	Growth and characterization of gamma-glycine single crystals for photonics and optoelectronic device applications Vijayalakshmi V, Dhanasekaran P
122 - 126	Growth and Characterization of L-Alanine Potassium Nitrate Single Crystals for Nonlinear Optical Applications Sundaram MS, Vijayalakshmi V, Dhanasekaran P, Balasundaram ON, Palaniswamy S
127 - 130	Periodically changing rod distance in unidirectional solidified Al-Al3Ni eutectic Veres Z, Ronafoldi A, Kovacs J, Roosz A
131 - 134	MOCVD growth of beta-FeSi2 film on modified Si surface by silver and enhancement of luminescence Akiyama K, Nojima S, Takahashi R, Matsumoto Y, Funakubo H
135 - 139	Growth and characterization of GaAs nanowires on Ge(111) substrates by selective-area MOVPE Minami Y, Yoshida A, Motohisa J, Tomioka K
140 - 146	In situ reconstruction of crystal shape grown in an axisymmetric Kyropoulos system Sen G, Jia WQ, Malier Y, Braescu L, Duffar T
147 - 155	Close-spaced vapor transport reactor for III-V growth using HCI as the transport agent Funch CJ, Greenaway AL, Boucher JW, Weiss R, Welsh A, Aloni S, Boettcher SW
156 - 159	Measurement of the capillary length for the dendritic growth of ammonium chloride Dougherty AJ
160 - 164	Single phase c-oriented epsilon-Fe2 similar to 3N film on Al(2)O(3 )grown by magnetron sputtering Tao ZK, Fang HA, Chen LW, Chen JW, Xiu XQ, Zhang R
165 - 170	Dynamics of Er3+ :YAG thermal radiation spectra near solid-melt interface at single crystal fiber growth process Bufetova GA, Rusanov SY, Seregin VF, Pyrkov YN, Tsvetkov VB
171 - 177	Formation of thicker silicon wires on a sufficiently cooled substrate during the gas phase zinc reduction reaction of SiCl4 Shirane N, Inasawa S
178 - 184	Long range, non-destructive characterization of GaN substrates for power devices Gallagher JC, Anderson TJ, Luna LE, Koehler AD, Hite JK, Mahadik NA, Hobart KD, Kub FJ
185 - 189	Dependence of surface morphology at initial growth of CdTe on the II/VI on (211) Si substrates by vapor phase epitaxy using metallic Cd source Iso K, Gokudan Y, Shiraishi M, Nishikado M, Murakami H, Koukitu A
190 - 200	Early history of MOVPE reactor development Wang CA
201 - 205	Computer simulation for formation of critical spaces in II-VI solid solutions Kazakov AI, Shapovalov GV, Moskvin PP