1 - 7 |
99.992% Si-28 CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits Mazzocchi V, Sennikov PG, Bulanov AD, Churbanov MF, Bertrand B, Hutin L, Barnes JP, Drozdov MN, Hartmann JM, Sanquer M |
8 - 16 |
The effects of different types of additives on growth of biomineral phases investigated by in situ atomic force microscopy Cho KR, Kulshreshtha P, Wu KJJ, Seto J, Qiu SR, De Yoreo JJ |
17 - 22 |
Novel approach to study dispersion in growth and dissolution rate of crystals from solutions Kaya M, Ceyhan AA, Abut S, Sahin O |
23 - 28 |
Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy Ramesh C, Tyagi P, Abhiram G, Gupta G, Kumar MS, Kushvaha SS |
29 - 34 |
Macroscopic kinetics of melt crystallization of caprolactam Liu BS, Wang YD, Sun H |
35 - 39 |
Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique Roy UN, Camarda GS, Cui Y, Gul R, Hossain A, Yang G, Okobiah OK, Egarievwe SU, James RB |
40 - 43 |
Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substrates Sundaram S, Li X, Alam S, Halfaya Y, Patriarche G, Ougazzaden A |
44 - 49 |
Crystal growth and characterization of gamma-glycine grown from AgSO4 for nonlinear optical applications Vijayalakshmi V, Dhanasekaran P |
50 - 53 |
Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy Liu ZB, Nitta S, Usami S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Amano H |
54 - 59 |
Catalyst/surfactant co-assisted colloidal synthesis and optical properties of ultrathin/ultralong ZnSe nanowires Wang JL, Qiao YJ, Wang TT, Chen KM |
60 - 65 |
Thermal analysis and crystal growth of doped Nb2O5 Hidde J, Guguschev C, Klimm D |
66 - 70 |
Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode Yoshimura S, Takano K, Ishida K, Shimomura K |
71 - 86 |
Modeling anisotropic shape evolution during Czochralski growth of oxide single crystals Weinstein O, Virozub A, Miller W, Brandon S |
87 - 90 |
High throughput MOVPE and accelerated growth rate of GaAs for PV application Ubukata A, Sodabanlu H, Aihara T, Oshima R, Sugaya T, Koseki S, Matsumoto K, Watanabe K, Nakano Y, Sugiyama M |
91 - 95 |
Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates Feng QJ, Li TT, Li F, Li YZ, Shi B, Gao C, Wang DY, Liang HW |
96 - 102 |
Effect of target ferroelectric niobate crystal structure on topochemical processes and product morphology with the Nb2O5 precursor Fu J, Hou YD, Ge HY, Zheng MP, Zhu MK |
103 - 106 |
Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool Tsukui M, Iyechika Y, Nago H, Takahashi H |
107 - 111 |
Corona assisted gallium oxide nanowire growth on silicon carbide Reiprich J, Kups T, Schlag L, Isaac NA, Biswas S, Breiling J, Schaaf P, Stauden T, Pezoldt J, Jacobs HO |
112 - 117 |
Fabrication of a p-type Cu2O thin-film via UV-irradiation of a patternable molecular-precursor film containing Cu(II) complexes Wu HJ, Tomiyama N, Nagai H, Sato M |
118 - 123 |
Zinc blende and wurtzite crystal structure formation in gold catalyzed InGaAs nanowires Johansson J, Leshchenko ED |
124 - 128 |
Preparation, structure and scintillation of cesium hafnium chloride bromide crystals Rowe E, Goodwin WB, Bhattacharya P, Cooper G, Schley N, Groza M, Cherepy NJ, Payne SA, Burger A |
129 - 132 |
Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge Tajima J, Hikosaka T, Kuraguchi M, Nunoue S |
133 - 140 |
Thermodynamic modelling of InAs/InP(001) growth towards quantum dots formation by metalorganic vapor phase epitaxy Hasan S, Merckling C, Pantouvaki M, Meersschaut J, Van Campenhout J, Vandervorst W |
141 - 145 |
High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (110) Si substrates grown by ammonia molecular beam epitaxy Noh YK, Lee ST, Kim MD, Oh JE |