Journal of Crystal Growth

Journal of Crystal Growth, Vol.297, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (39 articles)

1 - 3	Crystal growth of Ni3V2O8 by flux method He ZZ, Ueda Y, Itoh M
4 - 6	Growth of dilute GaSbN layers by liquid-phase epitaxy Mondal A, Das TD, Halder N, Dhar S, Kumar J
7 - 9	Nanostructure characterization of (SmS)(1.19)TaS2 by means of STM/STS Winiarza S, Klimczuk T, Cava RJ, Czajka R
10 - 13	Effects of electron beam annealing on optical and structural properties of GaN nanorods grown by HVPE Lee S, Lee HS, Han CS, Kang TW, Kim DY
14 - 19	Segregation coefficients of various dopants in SixGe1-x(0.93 < x < 0.96) single crystals Yonenaga I, Ayuzawa T
20 - 32	Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design Geiser J, Klein O, Philip P
33 - 37	On the optical crystal properties of quantum-well GaIn(N)As/GaAs semiconductors grown by molecular-beam epitaxy Pavelescu EM, Slotte J, Dhaka VDS, Saarinen K, Antohe S, Cimpoca G, Pessa M
38 - 43	Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy Lin JC, Hogg R, Fry P, Hopkinson M, Ross I, Cullis A, Kolodka R, Tartakovskii A, Skolnick M
44 - 51	Zn diffusion behavior at the InGaAsP/InP heterointerface grown using MOCVD Kadoiwa K, Ono K, Ohkura Y
52 - 56	MBE growth and optical properties of highly tensile-strained In1-xGaxAs/In-0.52(Ga0.4Al0.6)(0.48)As multi-quantum-wells using digital alloy Kim JM, Park CY, Lee YT, Song JD
57 - 60	Sb as surfactant at plastic relaxation of GeSi/Si(001) films grown by molecular-beam epitaxy: Reduction of surface roughness value Bolkhovityanov YB, Deryabin AS, Gutakovskii AK, Sokolov L
61 - 65	Deposition of copper selenide thin films and nanoparticles Hu YX, Afzaal M, Malik MA, O'Brien P
66 - 73	Transmission electron microscopy study on pre-strained InGaN/GaN quantum wells Chen YS, Yao LC, Lin YL, Hung L, Huang CF, Tang TY, Huang JJ, Shiao WY, Yang CC
74 - 79	Growth and process induced dislocations in zinc oxide crystals Dhanaraj G, Dudley M, Bliss D, Callahan M, Harris M
80 - 86	Epitaxial growth of (111)ZrN thin films on (111)Si substrate by reactive sputtering and their surface morphologies Yanagisawa H, Shinkai S, Sasaki K, Sakurai J, Abe Y, Sakai A, Zaima S
87 - 94	Growth and characterization of reduced and unreduced Rh doped potassium niobate single crystals Choubey A, Dobeli M, Bach T, Montemezzani G, Gunther D, Gunter P
95 - 99	Behaviors of group Va elements in ZnSe Wang JF, Oh CB, Isshiki M
100 - 104	Epitaxial MgSiO4 thin films with a spinel structure grown on Si substrates Kang L, Gao J, Xu HR, Zhao SQ, Chen H, Wu PH
105 - 110	Sublimation growth of aluminum nitride crystals Gu Z, Du L, Edgar JH, Nepal N, Lin JY, Jiang H, Witt R
111 - 116	Synthesis, growth, and characterization of 4-OCH3-4'-nitrochalcone single crystal: A potential NLO material Patil PS, Dharmaprakash SM, Fun HK, Karthikeyan MS
117 - 132	Phase equilibria and eutectic growth in quaternary organic alloys amino-methyl-propanediol-(D)camphor-neopentylglycol-succinonitrile (AMPD-DC-NPG-SCN) Witusiewicz VT, Sturz L, Hecht U, Rex S
133 - 137	Considerations on facetting and on the atomic structure of the phase boundary in low-pressure solution growth of GaN Birkmann B, Hussy S, Sun G, Berwian P, Meissner E, Friedrich J, Muller G
138 - 145	Compositional and kinetic studies on the crystallization of zeolite beta using cost-efficient TEABr without seed under static and stirred conditions Lee YJ, Kim SD, Byun SC, Park JW, Jeong YJ, Kwon YJ, Song HO, Kim WJ
146 - 151	Surface defects and mechanical hardness of rapidly grown DAST crystals Hameed ASH, Rohani S, Yu WC, Tai CY, Lan CW
152 - 156	Nucleation-trap crystallizer for growth of crystals from solutions Karnal AK, Saxena A, Ganesamoorthy S, Bhaumik I, Wadhawan VK, Bhat HL, Gupta PK
157 - 160	Topologically linked crystals Matsuura T, Yamanaka M, Hatakenaka N, Matsuyama T, Tanda S
161 - 168	Kinematics of apophyllite leaching - A terrace-ledge-kink process within phyllosilicate interlayers Aldushin K, Jordan G, Schmahl WW
169 - 179	Evolution of crystal morphologies to equilibrium by surface diffusion with anisotropic surface free energy in three dimensions Zhang W
180 - 186	Nucleation, growth and ageing scenarios in closed systems I: A unified mathematical framework for precipitation, condensation and crystallization Noguera C, Fritz B, Clement A, Baronnet A
187 - 198	Nucleation, growth and ageing scenarios in closed systems II: Dynamics of a new phase formation Noguera C, Fritz B, Clement A, Baronnet A
199 - 203	Defect structure and optical damage resistance of In : Mg : Fe : Li/NbO3 crystals with various Li/Nb ratios Sun L, Wang J, Lv Q, Liu BQ, Guo FY, Wang R, Cai W, Xu YH, Zhao LC
204 - 210	Selective epitaxial growth of GaAs on Ge by MOCVD Brammertz G, Mols Y, Degroote S, Leys M, Van Steenbergen J, Borghs G, Caymax M
211 - 222	Dendrite growth velocity in levitated undercooled nickel melts Funke O, Phanikumar G, Galenko PK, Chernova L, Reutzel S, Kolbe M, Herlach DM
223 - 227	Assembly of polystyrene colloidal crystal templates by a dip-drawing method Liu ZF, Ya J, Xin Y, Ma JL, Zhou CL
228 - 233	Effects of synthesis time for synthesizing single-walled carbon nanotubes over Mo-Fe-MgO catalyst and suggested growth mechanism Niu Z, Fang Y
234 - 238	Effect of crystallite size on the surface defect of nano-TiO2 prepared via solvothermal synthesis Kongsuebchart W, Praserthdam P, Panpranot J, Sirisuk A, Supphasrirongjaroen P, Satayaprasert C
239 - 246	Epitaxial growth of (110) and (111) SmAl2 films: Deposition temperature dependence of the growth direction Avisou A, Dufour C, Dumesnil K, Pierre D
247 - 258	Study of the mechanism of crystallization electromotive force during growth of congruent LiNbO3 using a micro-pulling-down method Koh S, Uda S, Nishida M, Huang XM
259 - 263	Some reasons for the formation of grain boundaries and melt inclusions in growing large BBO crystals by TSSG technique Tsvetkov EG