Journal of Crystal Growth

Journal of Crystal Growth, Vol.303, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (67 articles)

1 - 4	IWMCG-5 proceedings of the fifth international workshop on modeling in crystal growth - September 10-13, 2006, Bamberg, Germany - Preface Muller G, Friedrich J
5 - 11	A bottom-up multiscale view of point-defect aggregation in silicon Sinno T
12 - 17	Molecular dynamics simulation of intrinsic point defects in germanium Spiewak P, Muzyk M, Kurzydlowski KJ, Vanhellemont J, Mlynarczyk K, Wabinski P, Romandic I
18 - 22	Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer Dreyer W, Duderstadt F, Naldzhieva M
23 - 29	Growth of 2D nuclei-A Monte Carlo study of existence of various habits Prywer J, Krukowski S
30 - 33	Time delayed feedback control in growth phenomena Block M, Scholl E
34 - 36	A first-principles study on nitrogen solubility in Na flux toward theoretical search for a novel flux for bulk GaN growth Kawahara M, Kawamura F, Yoshimura M, Mori Y, Sasaki T, Yanagisawa S, Morikawa Y
37 - 43	Crystal growth of GaN on (0001) face by HVPE-atomistic scale simulation Kempisty P, Krukowski S
44 - 48	Structural units of polycomponent melts modeled using diffraction, spectroscopy, and computation techniques Tsvetkov EG, Davydov AV, Kozlova SG, Yudaev IV
49 - 57	Three-dimensional phase-field simulations of directional solidification Plapp M
58 - 68	Interaction between single grain solidification and macro segregation: Application of a cellular automaton - Finite element model Guillemot G, Gandin CA, Bellet M
69 - 73	Influence of external flows on pattern growth Medvedev D, Fischaleck T, Kassner K
74 - 79	Step bunching in crystal growth from solutions: Model of nonstationary diffusion layer, numerical simulation Bredikhin VI, Malshakova OA
80 - 84	Step, meandering in epitaxial growth Hausser F, Voigt A
85 - 89	Motion of step pairs during drift-induced step bunching on a S(001) vicinal face Sato M, Uwaha M, Takahashi T
90 - 94	The effect of kinetics in the surface evolution of thin crystalline films Stocker C, Voigt A
95 - 99	Growth kinetics by means of phase-field methods in applied crystal growth Miller W, Rasin I
100 - 104	A cellular automata algorithm for step dynamics in continuum modeling of epitaxial growth Backofen R, Voigt A
105 - 109	Growth morphology of sodium fluorosilicate crystals and its analysis in base of relative growth rates Krasinski MJ, Prywer J
110 - 113	Effective segregation coefficient in cluster crystallization model Zavartsev YD, Zagumennyi AI, Koutovoi SA
114 - 123	Strategies for the coupling of global and local crystal growth models Derby JJ, Lun L, Yeckel A
124 - 134	A new hybrid method for the global modeling of convection in CZ crystal growth configurations Fainberg J, Vizman D, Friedrich J, Mueller G
135 - 140	Partly three-dimensional calculation of silicon Czochralski growth with a transverse magnetic field Kakimoto K, Liu LJ
141 - 145	Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1-xSix bulk crystals Smirnova OV, Kalaev VV, Makarov YN, Abrosimov NV, Riemann H, Kurlov VN
146 - 149	3D computation of oxygen transport in Czochralski crystal growth of silicon considering evaporation Raufeisen A, Jana S, Breuer M, Botsch T, Durst F
150 - 155	A global analysis of heat transfer in the CZ crystal growth of oxide: Recent developments in the model Tsukada T, Kobayashi M, Jing CJ
156 - 160	Effect of internal radiation on the solid-liquid interface shape in low and high thermal gradient Czochralski oxide growth Budenkova O, Vasiliev M, Yuferev V, Kalaev V
161 - 164	Development of a software for the numerical simulation of VCz growth under the influence of a traveling magnetic field Lechner C, Klein O, Druet PE
165 - 169	Three-dimensional global modeling of a unidirectional solidification furnace with square crucibles Liu LJ, Nakano S, Kakimoto K
170 - 174	3D dynamic mesh numerical model for multi-crystalline silicon furnaces Delannoy Y, Barvinschi F, Duffar T
175 - 179	3D coupled electromagnetic and thermal modelling of EFG silicon tube growth Kasjanow H, Nikanorov A, Nacke B, Behnken H, Franke D, Seidl A
180 - 186	Development of a model for on-line control of crystal growth by the AHP method Gonik MA, Lomokhova AV, Gonik MM, Kuliev AT, Smirnov AD
187 - 192	Numerical simulation of temperature and pressure fields in CdTe growth experiment in the Material Science Laboratory (MSL) onboard the International Space Station in relation to dewetting Sylla L, Duffar T
193 - 198	Investigation of Cd1-xZnxTe composition inhomogeneity at crystal growth by AHP-method Marchenko MP, Golyshev VD, Bykova SV
199 - 202	Modeling and experimental analysis in excimer-laser crystallization of a-Si films Chen YR, Chang CH, Chao LS
203 - 210	Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth Kalaev VV
211 - 220	Convective phenomena in large melts including magnetic fields Muiznieks A, Krauze A, Nacke B
221 - 225	Influence of different types of magnetic fields on the interface shape in a 200 mm Si-EMCZ configuration Vizman D, Watanabe M, Friedrich J, Muller G
226 - 230	Three-dimensional stability calculations for hydrodynamic model of Czochralski growth Gelfgat AY
231 - 235	3D time-dependent numerical study of the influence of the melt flow on the interface shape in a silicon ingot casting process Vizman D, Friedrich J, Mueller G
236 - 240	Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells Kuliev AT, Durnev NV, Kalaev VV
241 - 245	Numerical analysis of the unsteady character of "spoke pattern" in Bridgman top seeding geometry Szmyd JS, Jaszczur M, Ozoe H
246 - 249	Numerical study of hydrodynamic instabilities during growth of dielectric crystals from the melt Wilke H, Crnogorac N, Cliffe KA
250 - 252	Time-dependent numerical simulation of the VGF process with a rotating magnetic field Bellmann MP, Patzold O, Wunderwald U, Stelter M, Moller HJ
253 - 257	Numerical modeling of melt flows in vertical Bridgman configuration affected by a rotating heat field Kokh KA, Popov VN, Kokh AE, Krasin BA, Nepomnyaschikh AI
258 - 261	Numerical and experimental modeling of the melt flow in a traveling magnetic field for vertical gradient freeze crystal growth Galindo V, Grants I, Lantzsch R, Paetzold O, Gerbeth G
262 - 268	Modelling of the influence of residual gravity on the segregation in directional solidification under microgravity Ruiz X
269 - 273	Vibration effect on morphological instability of planar solidification front Lyubimov DV, Lyubimova TP, Cherepanov AA, Lobov NI, Vasilyev VV, Roux B
274 - 278	Thermo- and soluto-cupillary convection in the floating zone process in zero gravity conditions Lyubimova TP, Skuridin RV, Faizrakhmanova IS
279 - 283	A numerical simulation study for the combined effect of static and rotating magnetic fields in liquid phase diffusion growth of SiGe Yildiz E, Dost S
284 - 286	3D computer simulation for convection in liquid phase epitaxy of ternary alloys Kolmychkov VV, Mazhorova OS, Popov YP
287 - 296	Dynamic three-dimensional simulation of facet formation and segregation in Bridgman crystal growth Lan CW, Chen CJ
297 - 301	Dynamics of 1 1 1 Ge facet and dopant distribution at laminar melt flow crystal growth Marchenko MP, Golyshev VD, Bykova SV, Frjazinov IV, Gonik MA, Tsvetovsky VB
302 - 309	Dislocation density evaluation using dislocation kinetics model Miyazaki N
310 - 313	Three-dimensional resolved shear stresses in off-axis grown SiC single crystals Bottcher K, Cliffe KA
314 - 317	Critical thickness calculations for InGaN/GaN Holec D, Costa PMFJ, Kappers MJ, Humphreys CJ
318 - 322	Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor (R) Martin C, Dauelsberg M, Protzmann H, Boyd AR, Thrush EJ, Heuken M, Talalaev RA, Yakovlev EV, Kondratyev AV
323 - 329	Process conditions optimization for the maximum deposition rate and uniformity in vertical rotating disc MOCVD reactors based on CFD modeling Mitrovic B, Gurary A, Quinn W
330 - 333	Modelling and simulation of MOVPE of GaAs-based compound semiconductors in production scale Planetary Reactors Brien D, Dauelsberg M, Christiansen K, Hofeldt J, Deufel M, Heuken M
334 - 336	Numerical modeling of silicon carbide epitaxy in a horizontal hot-wall reactor Nishizawa S, Pons M
337 - 341	Numerical modeling and experimental verification of modified-PVT crystal growth of SiC Wellmann PJ, Pons M
342 - 344	Effect of heat transfer on macroscopic and microscopic crystal quality in silicon carbide sublimation growth Nishizawa S, Kato T, Arai K
345 - 348	Mechanism of n-doping of silicon carbide epitaxial films Fiorucci A, Moscatelli D, Masi M
349 - 351	p-Doping mechanism in HTCVD silicon carbide Fiorucci A, Moscatelli D, Masi M
352 - 356	Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS Geiser J, Klein O, Philip P
357 - 361	Application of flow-kinetics model to the PVT growth of SiC crystals Chen QS, Yan JY, Prasad V
362 - 380	Multi-scale modeling of chemical vapor deposition processes for thin film technology Kleijn CR, Dorsman R, Kuijlaars KJ, Okkerse M, van Santen H