Journal of Crystal Growth

Journal of Crystal Growth, Vol.326, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (48 articles)

1 - 1	Comparison of metal-organic decomposed (MOD) cerium oxide (CeO2) gate deposited on GaN and SiC substrates Preface Freitas JA, Kim J, Kim JK, Son CS, Jang S, Baik KH
2 - 8	Comparison of metal-organic decomposed (MOD) cerium oxide (CeO2) gate deposited on GaN and SiC substrates Quah HJ, Lim WF, Cheong KY, Hassan Z, Lockman Z
9 - 13	Structural properties of the epitaxial CuCr0.95Mg0.05O2 thin films on c-plane sapphire substrates by pulsed laser deposition Kim SY, Sung SY, Jo KM, Lee JH, Kim JJ, Pearton SJ, Norton DP, Heo YW
14 - 18	Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrate Kang MG, Tark S, Lee JC, Son CS, Kim D
19 - 22	Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire Lee SN, Kim J, Kim H
23 - 27	Low-temperature soluble InZnO thin film transistors by microwave annealing Song K, Moo CY, Jun T, Lee D, Jeong Y, Moon J
28 - 32	Study on photoluminescence of GaN-based UV-LEDs with refractive index gradient polymeric nanopatterns Park M, Yu G, Shin K
33 - 36	Study of green light-emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualities Oh DS, Jang JJ, Nam O, Song KM, Lee SN
37 - 41	Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE Lai FI, Kuo SY, Chen WC, Lin WT, Wang WL, Chang L, Hsiao CN, Chiang CH
42 - 44	Strongly-enhanced near-band-edge photoluminescence of Nb-implanted ZnO films Kim CO, Shin DH, Choi SH
45 - 49	Diffusion of chromium in sapphire: The effects of electron beam irradiation Ahn YK, Seo JG, Park JW
50 - 57	Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO films Lee J, Lim D, Yang K, Choi W
58 - 61	Photo-enhanced chemical etched GaN LED on silicon substrate Kim HY, Mastro MA, Hite J, Eddy CR, Kim J
62 - 64	Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons Kim HY, Anderson T, Mastro MA, Freitas JA, Jang S, Hite J, Eddy CR, Kim J
65 - 68	Wet etching of non-polar gallium nitride light-emitting diode structure for enhanced light extraction Kim HY, Jung Y, Kim SH, Ahn J, Mastro MA, Hite JK, Eddy CR, Kim J
69 - 72	Growth of p-CdTe thin films on n-GaN/sapphire Jung Y, Chun S, Kim D, Kim J
73 - 76	Spray pyrolysis synthesis of MAl2O4:Eu2+ (M=Ba, Sr) phosphor for UV LED excitation Chung W, Yu HJ, Park SH, Chun BH, Kim J, Kim SH
77 - 80	Luminous properties of Sr1-xZnxSe:Eu2+ phosphors for LEDs application Yu HJ, Chung W, Park SH, Kim J, Kim SH
81 - 84	Electrical and optical characterization of GaN micro-wires Jung Y, Ahn J, Mastro MA, Hite JK, Feigelson B, Eddy CR, Kim J
85 - 89	Annealing effect on conductivity behavior of Li-doped ZnO thin film and its application as ZnO-based homojunction device Tsai SY, Hon MH, Lu YM
90 - 93	Characteristics of CuInS2/ZnS quantum dots and its application on LED Kim H, Han JY, Kang DS, Kim SW, Jang DS, Suh M, Kirakosyan A, Jeon DY
94 - 97	The effects of zinc on the characteristics of (Zn,Ca)TiO3:Pr3+ phosphors Chung SM, Kang SY, Shin JH, Cheong WS, Hwang CS, Cho KI, Lee SJ, Kim YJ
98 - 102	Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD Son JS, Baik KH, Seo YG, Song H, Kim JH, Hwang SM, Kim TG
103 - 108	Synthesis and electrophosphorescent properties of iridium complexes based on phenylpyridine-based main ligand for organic light-emitting diodes Song M, Park JS, Nam KS, Yoon M, Yoon HW, Kim AJ, Kim YI, Gal YS, Lee JW, Jin SH
109 - 112	Effect of cathodes on high efficiency inorganic-organic hybrid LEDs based on CdSe/ZnS quantum dots Tuan NH, Koh KH, Nga PT, Lee S
113 - 115	Color tuning of organic light-emitting diodes by adjusting the ligands of heteroleptic iridium(III) complexes Seo JH, Kim IJ, Kim YS, Kim YK
116 - 119	Effect of substitution of nitrogen ions to red-emitting Sr3B2O6-3/2xNx:Eu2+ oxy-nitride phosphor for the application to white LED Jung SH, Kang DS, Jeon DY
120 - 123	Photoluminescence and structural properties of Ca3Y(VO4)(3): RE3+ (=Sm3+, Ho3+ and Tm3+) powder phosphors for tri-colors Bandi VR, Grandhe BK, Jayasimhadri M, Jang K, Lee HS, Yi SS, Jeong JH
124 - 127	Influence of Al2O3 additions on the crystallization mechanism and properties of diopside/anorthite hybrid glass-ceramics for LED packaging materials Kang M, Kang S
128 - 134	Synthesis and luminescence properties of cinnamide based nanohybrid materials containing Eu (II) ions Kumar ABVK, Jayasimhadri M, Cha H, Chen K, Lim JM, Lee YI
135 - 139	Growth behavior and growth rate dependency in LEDs performance for Mg-doped a-plane GaN Song KM, Kim JM, Lee DH, Shin CS, Ko CG, Kong BH, Cho HK, Yoon DH
140 - 146	Application of electrolytic in-process dressing (ELID) grinding and chemical mechanical polishing (CMP) process for emerging hard-brittle materials used in light-emitting diodes Lee H, Kasuga H, Ohmori H, Lee H, Jeong H
147 - 151	InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer Kong BH, Cho HK, Kim MY, Choi RJ, Kim BK
152 - 156	The analysis of CdS thin film at the processes of manufacturing CdS/CdTe solar cells Chun S, Jung Y, Kim J, Kim D
157 - 162	Preparation of zinc sulfide nanocrystallites from single-molecule precursors Palve AM, Garje SS
163 - 165	The formation of InZnO lattices incorporating Ba for thin-film transistors using a solution process Kim SJ, Kim DL, Rim YS, Jeong WH, Kim DN, Yoon DH, Kim HJ
166 - 170	The crossover of preferred orientation in heteroepitaxial ZnO/MgO(001) films Seo SH, Kang HC
171 - 174	Investigation of solution-processed amorphous SrInZnO thin film transistors Yoon DH, Kim SJ, Jeong WH, Kim DL, Rim YS, Kim HJ
175 - 178	Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol-gel process Choi JH, Hwang SM, Lee CM, Kim JC, Park GC, Joo J, Lim JH
179 - 182	Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin films Cho S
183 - 185	The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering method Seo JK, Ko KH, Choi WS, Park M, Lee JH, Yi JS
186 - 190	Electrical properties of top-gate oxide thin-film transistors with double-channel layers Cheong WS, Chung SM, Shin JH, Hwang CS
191 - 194	Spontaneous formation of GaN nanostructures by molecular beam epitaxy Kesaria M, Shetty S, Shivaprasad SM
195 - 199	Thermal annealing effects of MBE-seed-layers on properties of ZnO nanorods grown by hydrothermal method Kim MS, Yim KG, Choi HY, Cho MY, Kim GS, Jeon SM, Lee DY, Kim JS, Kim JS, Son JS, Lee JI, Leem JY
200 - 204	Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist mask Kim SI, Kim B, Jang S, Kim AY, Park J, Byun D
205 - 207	Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates Kim BJ, Kim HY, Kim J, Jang S
208 - 211	Improved sorption characteristics of NH3 molecules on the solution-processed graphene sheets Ko G, Jung Y, Lee KY, Lee K, Kim J
212 - 217	Improvement on the synthesis technique of ultrananocrystalline diamond films by using microwave plasma jet chemical vapor deposition Lin CR, Liao WH, Wei DH, Chang CK, Fang WC, Chen CL, Dong CL, Chen JL, Guo JH