Journal of Crystal Growth

Journal of Crystal Growth, Vol.241, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (39 articles)

1 - 3	Synthesis of high-purity Sr2GdRuO6 in a water vapor atmosphere Li MD, Yu M, Wang ZB, Yang HS, Chen ZY, Cao LZ
4 - 14	Study of the new beta-In2S3 containing Na thin films - Part I: Synthesis and structural characterization of the material Barreau N, Bernede JC, Deudon C, Brohan L, Marsillac S
15 - 18	Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures Jacobs B, Kramer MCJCM, Geluk EJ, Karouta F
19 - 30	Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle da Silva MJ, Quivy AA, Gonzalez-Borrero PP, Marega E, Leite JR
31 - 38	Enhanced optical performances of strain-compensated 1.3-mu m GaInNAs/GaNAs/GaAs quantum-well structures Pavelescu EM, Jouhti T, Peng CS, Li W, Konttinen J, Dumitrescu M, Laukkanen P, Pessa M
39 - 44	Thermal expansion behaviour of CdHgTe epitaxial layers on CdZnTe substrates Skauli T, Haakenaasen R, Colin T
45 - 50	Boron doping of silicon layers grown by liquid phase epitaxy McCann MJ, Weber KJ, Petravic M, Blakers AW
51 - 56	Study of the new beta-In2S3 containing Na thin films. Part II: Optical and electrical characterization of thin films Barreau N, Bernede JC, Marsillac S
57 - 62	Defect formation in GaAs grown by organometallic vapor phase epitaxy and the structure of the native defect EL2 Morrow RA
63 - 68	Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots Lee HS, Lee JY, Kim TW, Choo DC, Kim MD, Seo SY, Shin JH
69 - 73	A novel line-order of InAs quantum dots on GaAs Meng XQ, Jin P, Xu B, Li CM, Zhang ZY, Wang ZG
74 - 84	Investigations into growth of semiconductor crystals with high micro homogeneity of properties under microgravity simulating conditions Strelov VI, Zakharov BG, Sidorov VS, Ananyev PA
85 - 92	Cathodoluminescence study of selective epitaxial growth of InxGa1-xAs (x-0.53) thin quantum wells on InP pyramid structures on a masked substrate Yamakawa I, Oga R, Nonogaki Y, Fujiwara Y, Takeda Y, Nakamura A
93 - 100	Effect of HCl on the SiGe growth kinetics in reduced pressure-chemical vapor deposition Hartmann JM, Champay F, Loup V, Rolland G, Semeria MN
101 - 107	Some experiments on the growth of InTlSb by LPE Ruiz-Becerril I, Hernandez-Sustaita M, de Anda F, Mishurnyi VA, Gorbatchev AY, Narvaez L
108 - 114	Growth, characterization and nonlinear optical properties of SrB4O7 crystals Pan F, Shen GQ, Wang RJ, Wang XQ, Shen DZ
115 - 123	Optimization of MOVPE-grown InxGa1-xP self-assembled quantum dots on GaP Datta S, Bhattacharya A, Gokhale MR, Pai SP, John J, Arora BM
124 - 128	The effect of temperature on the synthesis of BN nanocrystals Hao XP, Yu MY, Cui DL, Xu XG, Wang QL, Jiang MH
129 - 134	Cracking mechanism in CLBO crystals at room temperature Pan F, Wang XQ, Shen GQ, Shen DZ
135 - 140	Compositional variations and phase stability during horizontal Bridgman growth of AgGaTe2 crystals Roy UN, Mekonen B, Adetunji OO, Chattopahhyay K, Kochari F, Cui Y, Burger A, Goldstein JT
141 - 150	Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0001) films via MOVPE Roskowski AM, Miraglia PQ, Preble EA, Einfeldt S, Davis RF
151 - 158	Ion layer gas reaction (ILGAR) - conversion, thermodynamic considerations and related FTIR analyses Fischer CH, Muffler HJ, Bar M, Fiechter S, Leupolt B, Lux-Steiner MC
159 - 164	Float zone growth and laser performance of Nd : GdVO4 single crystals Shonai T, Higuchi M, Kodaira K, Ogawa T, Wada S, Machida H
165 - 170	Optical and electrical properties of InN grown by radio-frequency reactive sputtering Motlan, Goldys EM, Tansley TL
171 - 176	Growth of InBixSb(1-x) films on GaAs(001) substrates using liquid phase epitaxy and their characterization Dixit VK, Keerthi KS, Bera P, Bhat HL
177 - 182	Zone melting growth of LiSrAlF6 : Cr crystals for diode laser pumping Ruiz MCHM, Barbosa EA, Maldonado EP, Morato SP, Wetter NU, Vieira ND, Baldochi SL
183 - 188	Effect of substrate temperature on the formation of CdO composite in CdS-doped SiO2 films as deposited by PLD Wang H, Zhu Y, Ong PP
189 - 192	Preparation of InN nanocrystals by solvo-thermal method Bai YJ, Liu ZG, Xu XG, Cui DL, Hao XP, Feng X, Wang QL
193 - 199	Morphological evolution of silver crystals produced by reduction with ascorbic acid Fukuyo T, Imai H
200 - 205	Growth and characterization of methyl-p-hydroxybenzoate (p-MHB): a non-linear optical material Perumal CKL, Arulchakkaravarthi A, Santhanaraghavan P, Ramasamy P
206 - 219	Chromatographic studies of purity and segregation behaviour of natural impurities present in coal tar acenaphthene and pyrene Marciniak B
220 - 230	Driving force for crystallization of gas hydrates Kashchiev D, Firoozabadi A
231 - 234	Analytical solution to Matthews' and Blakeslee's critical dislocation formation thickness of epitaxially grown thin films Braun A, Briggs KM, Boni P
235 - 240	Semi-empirical modeling for columnar and equiaxed growth of alloys Ares AE, Gueijman SF, Schvezov CE
241 - 248	Effect of internal radiation on thermal stress fields in CZ oxide crystals Kobayashi M, Tsukada T, Hozawa M
249 - 260	Analysis of secondary radiation (multiple reflections) in monoellipsoidal mirror furnaces Rivas D, Haya R
261 - 265	Dependence of oriented BN films on Si(100) substrate temperature Zhou H, Wang RZ, Huang AP, Wang M, Wang H, Wang B, Yan H
266 - 268	Synthesis and calorimetric investigation of unstable beta-glycine Drebushchak VA, Boldyreva EV, Drebushchak TN, Shutova ES
269 - 269	Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions (vol 213, pg 40, 2000) Hayakawa Y, Okano Y