Journal of Crystal Growth

Journal of Crystal Growth, Vol.247, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (32 articles)

1 - 12	Crystal-melt interface shape and dislocations during the melting of silicon Wang YR, Kakimoto K
13 - 16	Silicon nanowires grown on a pre-annealed Si substrate Zeng XB, Xu YY, Zhang SB, Hu ZH, Diao HW, Wang YQ, Kong GL, Liao XB
17 - 22	Epitaxy and structural characterization of ZnSeTe layers grown on InP substrates Kontos AG, Raptis YS, Strassburg M, Pohl UW
23 - 27	InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source Putyato MA, Preobrazhenskii VV, Semyagin BR, Bolkhovityanov YB, Gilinsky AM, Gutakousky AK, Revenko MA, Pchelyakov OP, Feklin DF
28 - 34	Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy Li HD, Wang T, Jiang N, Liu YH, Bai J, Sakai S
35 - 41	Bismuth a new dopant for GaN films grown by molecular beam epitaxy-surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic Novikov SV, Winser AJ, Li T, Campion R, Harrison I, Foxon CT
42 - 48	High-quality GaMnAs films grown with arsenic dimers Campion RP, Edmonds KW, Zhao LX, Wang KY, Foxon CT, Gallagher BL, Staddon CR
49 - 54	Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer He J, Zhang YC, Xu B, Wang ZG
55 - 61	The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD Kim S, Lee K, Lee H, Park K, Kim CS, Son SJ, Yi KW
62 - 68	Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells Kim S, Lee K, Park K, Kim CS
69 - 76	A combined carbon and oxygen segregation model for the LEC growth of SIGaAs Eichler S, Seidl A, Borner F, Kretzer U, Weinert B
77 - 83	Formation of microtwins in TmP/GaAs heterostructures Lin CH, Hwu RJ, Sadwick LP
84 - 90	Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD Huang JS, Dong X, Luo XD, Li DB, Liu XL, Xu ZY, Ge WK
91 - 98	The growth morphologies of GaN layer on Si(111) substrate Lu YA, Liu XL, Lu DC, Yuan HR, Hu GQ, Wang XH, Wang ZG, Duan XF
99 - 104	Abnormal effect of growth interruption on GaSb quantum dots formation grown by molecular beam epitaxy Luo XD, Xu ZY, Wang YQ, Wang WX, Wang JN, Ge WK
105 - 109	Synthesis of epitaxial Y-type magnetoplumbite thin films by quick optimization with combinatorial pulsed laser deposition Ohkubo I, Matsumoto Y, Ueno K, Chikyow T, Kawasaki M, Koinuma H
110 - 118	Epitaxial growth of CoO films on semiconductor and metal substrates by constructing a complex heterostructure Entani S, Kiguchi M, Saiki K, Koma A
119 - 125	Electrical and optical properties of ZnO transparent conducting films by the sol-gel method Lee JH, Ko KH, Park BO
126 - 130	In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate Zhang ZC, Yang SY, Zhang FQ, Xu B, Zeng YP, Chen YH, Wang ZG
131 - 136	Electromechanical and electro-optic properties of xBiScO(3)-yBiGaO(3)-(1-x-y)PbTiO3 single crystals Zhang SJ, Jeong DY, Zhang QM, Shrout TR
137 - 140	Dependence of photochromic damage on polarization in KTiOPO4 crystals Hu XB, Wang JY, Zhang HJ, Jiang HD, Liu H, Mu XD, Ding Y
141 - 147	Transmission loss of lead fluoride crystals induced by oxygen contamination Ren GH, Qun D, Li ZK, Shen DZ
148 - 156	Synthesis, crystal growth and second harmonic generation properties of trivalent rare-earth-doped non-linear tungsten-bronze-type structure Ba2Na1-3xRExNb5O15 (RE = Sc, Y, La, Gd, Yb and Lu) Yoshikawa A, Itagaki H, Fukuda T, Lebbou K, El Hassouni A, Brenier A, Goutaudier C, Tillement O, Boulon G
157 - 165	On the thermal and optical properties of ZnSe and doped ZnSe crystals grown by PVT Sankar N, Ramachandran K
166 - 176	A new membrane-based crystallization technique: tests on lysozyme Curcio E, Di Profio G, Drioli E
177 - 184	Protein crystal quality in diffusive environments and its evaluation Lopez-Jaramillo FJ, Otalora F, Gavira JA
185 - 191	Growth-induced inhomogeneities in synthetic quartz crystals revealed by the cathodoluminescence method Kawasaki M
192 - 198	Rapid sonocrystallization in the salting-out process Li H, Wang JK, Bao Y, Guo ZC, Zhang MY
199 - 206	Growth and characterization of pure and doped potassium pentaborate (KB5) single crystals Rajasekar SA, Thamizharasan K, Pragasam AJA, Julius JP, Sagayaraj P
207 - 212	Reinvestigation of phase relations around the oxyapatite phase in the Nd2O3-SiO2 system Masubuchi Y, Higuchi M, Kodaira K
213 - 218	Luminescence characteristics of pulsed laser deposited ZnGa2O4 thin film phosphors grown on various substrates Yi SS, Kim IW, Park HL, Bae JS, Moon BK, Jeong JH
219 - 235	Transient numerical investigation of induction heating during sublimation growth of silicon carbide single crystals Klein O, Philip P