1 - 7 |
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances Dong ZY, Zhao YW, Zeng YP, Duan ML, Sun WR, Jiao JH, Lin LY |
8 - 11 |
Origin of room temperature ferromagnetism in homogeneous (In,Mn)As thin films Blattner AJ, Prabhumirashi PL, Dravid VP, Wessels BW |
12 - 17 |
Epitaxial growth of tungsten carbide films using C-60 as carbon precursor Palmquist JP, Czigany Z, Hultman L, Jansson U |
18 - 25 |
Nitrogen doping of polycrystalline 3C-SiC films grown using 1,3-disilabutane in a conventional LPCVD reactor Wijesundara MBJ, Gao D, Carraro C, Howe RT, Maboudian R |
26 - 35 |
Vertical gradient freezing of doped gallium-antimonide semiconductor crystals using submerged heater growth and electromagnetic stirring Ma N, Bliss DF, Iseler GW |
36 - 39 |
Structural properties of GaN grown on LiGaO2 by PLD Takahashi H, Fujioka H, Ohta J, Oshima M, Kimura M |
40 - 46 |
Studies on single- and multi-layer InAsN quantum dots grown by solid-source molecular beam epitaxy Sun ZZ, Yoon SF, Chuin YK |
47 - 51 |
Initial growth behavior of Cu(In,Ga)Se-2 on molybdenum substrates Schlenker T, Schock HW, Werner JH |
52 - 60 |
High-resolution X-ray diffraction and optical absorption study of heavily nitrogen-doped 4H-SiC crystals Chung HJ, Skowronski M |
61 - 68 |
Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum Oyama Y, Ohno T, Suto K, Nishizawa J |
69 - 78 |
Indium surface segregation in AlSb and GaSb Renard C, Marcadet X, Massies J, Prevot I, Bisaro R, Galtier P |
79 - 84 |
Nucleation and grain growth of SrBi2Nb2O9 thin films Yoo DC, Lee JY, Kim IS, Kim YT |
85 - 89 |
Growth conditions and characterization of Bi2Sr2CaCu2O8+delta single crystals Funabiki H, Okanoue K, Takano C, Hamasaki K |
90 - 94 |
Fabrication of Pb(Zr,Ti)O-3 films on epitaxial gamma-Al2O3(001)/Si(001) substrates Akai D, Sawada K, Ishida M |
95 - 102 |
Photoluminescence behavior of ZnGa2O4-xSex : Mn2+ thin film phosphors Yi SS, Bae JS, Shim KS, Jeong JH, Park HL, Holloway PH |
103 - 109 |
Crystal chemistry of epitaxial ZnO on (111) MgAl2O4 produced by hydrothermal synthesis Andeen D, Loeffler L, Padture N, Lange FF |
110 - 114 |
MnSb/porous silicon hybrid structure prepared by physical vapor deposition Xiu HX, Chen NF, Peng CT |
115 - 120 |
Growth of high-quality beta(II)-Li3VO4 single crystals by the Czochralski method Kim DJ, Hwang YH, Kim HK, Kim JN, Kasuga Y, Ohshima K |
121 - 129 |
The effect of a periodic movement on the die of the bottom line of the melt/gas meniscus in the case of edge-defined film-fed growth system Braescu L, Balint AM, Balint S |
130 - 136 |
Epitaxial growth and properties of Ga-doped ZnO films grown by pulsed laser deposition Liu ZF, Shan FK, Li YX, Shin BC, Yu YS |
137 - 143 |
Dielectric properties of Co-doped Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition Wang SY, Cheng BL, Wang C, Lu HB, Zhou YL, Chen ZH, Yang GZ |
144 - 148 |
Large-scale synthesis of ultra-long wire-like single-crystal selenium arrays Liu XY, Mo MS, Zeng JH, Qian YT |
149 - 159 |
Theory of vapor diffusion in the high-density protein crystal growth device and its application to the measurement of the vapor pressures of aqueous solutions Nakamura H, Fukuyama S, Yoshizaki I, Yoda S |
160 - 164 |
Growth kinetics and H-shaped crystals of SAPO-40 Di Renzo F, Dumont N, Trens P, Gabelica Z |
165 - 178 |
Fe2O3 single crystals: hydrothermal growth, crystal chemistry and growth morphology Demianets LN, Pouchko SV, Gaynutdinov RV |
179 - 189 |
Selective inclusion of proteins into urinary calcium oxalate crystals: comparison between stone-prone and stone-free population groups Webber D, Rodgers AL, Sturrock ED |
190 - 207 |
Contact nucleation of steps: theory and Monte Carlo simulation van Enckevort WJP |
208 - 214 |
Synthesis of yttrium hydroxide and oxide nanotubes Tang Q, Liu ZP, Li S, Zhang SY, Liu XM, Qian YT |