Journal of Crystal Growth

Journal of Crystal Growth, Vol.310, No.17 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (25 articles)

3901 - 3901	Proceedings of the International Workshop on Bulk Nitride Semiconductors V (IWBNS-5) - Preface Freitas JA, Hanser D, da Silva AF, Koukitu A
3902 - 3906	Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride Ehrentraut D, Kagamitani Y, Fukuda T, Orito F, Kawabata S, Katano K, Terada S
3907 - 3910	Ammonothermal growth of bulk GaN Hashimoto T, Wu F, Speck JS, Nakamura S
3911 - 3916	Excellent crystallinity of truly bulk ammonothermal GaN Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski LP, Puchalski A, Kanbara Y, Yagi K, Minakuchi H, Hayashi H
3917 - 3923	Propagation of misfit dislocations from AlN/Si interface into Si Liliental-Weber Z, Maltez RL, Xie J, Morkoc H
3924 - 3933	GaN crystallization by the high-pressure solution growth method on HVPE bulk seed Bockowski M, Strak P, Grzegory I, Lucznik B, Porowski S
3934 - 3940	Seeded growth of GaN single crystals from solution at near atmospheric pressure Feigelson BN, Frazier RM, Gowda M, Freitas JA, Fatemi M, Mastro MA, Tischler JG
3941 - 3945	Optical properties of bulk GaN crystals grown from solution at moderate pressure and temperature Gowda M, Freitas JA, Frazier RM, Feigelson BN, Rao MV
3946 - 3949	Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method Kawamura F, Morishita M, Tanpo M, Imade M, Yoshimura M, Kitaoka Y, Mori Y, Sasaki T
3950 - 3952	High growth rate metal organic vapor phase epitaxy GaN Matsumoto K, Tokunaga H, Ubukata A, Ikenaga K, Fukuda Y, Tabuchi T, Kitamura Y, Koseki S, Yamaguchi A, Uematsu K
3953 - 3956	Fabrication and characterization of native non-polar GaN substrates Hanser D, Liu L, Preble EA, Udwary K, Paskova T, Evans KR
3957 - 3963	Thick GaN layers grown by HVPE: Influence of the templates Ashraf H, Weyher JL, van Dreumel GWG, Gzregorzyck A, Hageman PR
3964 - 3967	Free-standing zinc-blende (cubic) GaN layers and substrates Novikov SV, Stanton NM, Campion RP, Foxon CT, Kent AJ
3968 - 3972	Semi-insulating GaN substrates for high-frequency device fabrication Freitas JA, Gowda M, Tischler JG, Kim JH, Liu L, Hanser D
3973 - 3978	Boron phosphide as the buffer-layer for the epitaxial III-nitride growth: A theoretical study Ferreira VA, Alves HWL
3979 - 3982	Fabrication and properties of GaN-based lasers Perlin P, Swietlik T, Marona L, Czernecki R, Suski T, Leszczynski M, Grzegory I, Krukowski S, Nowak G, Kamler G, Czerwinski A, Plusa M, Bednarek M, Rybinski J, Porowski S
3983 - 3986	Growth of InGaN and InGaN/InGaN quantum wells by plasma-assisted molecular beam epitaxy Siekacz M, Feduniewicz-Zmuda A, Cywinski G, Krysko M, Grzegory I, Krukowski S, Waldrip KE, Jantsch W, Wasilewski ZR, Porowski S, Skierbiszewski C
3987 - 3991	Light-emitting diode development on polar and non-polar GaN substrates Wetzel C, Zhu M, Senawiratne J, Detchprohm T, Persans PD, Liu L, Preble EA, Hanser D
3992 - 3997	Dielectric studies of metal/n-GaN/metal Schottky contact in the radio frequency range Fechine PBA, Sombra ASB, Freitas JA
3998 - 4001	Characterization of bulk AlN crystals with positron annihilation spectroscopy Tuomisto F, Maki JM, Chemekova TY, Makarov YN, Avdeev OV, Mokhov EN, Segal AS, Ramm MG, Davis S, Huminic G, Helava H, Bickermann M, Epelbaum BM
4002 - 4006	Native oxide and hydroxides and their implications for bulk AlN crystal growth Edgar JH, Du L, Nyakiti L, Chaudhuri J
4007 - 4010	AlN bandgap temperature dependence from its optical properties Silveira E, Freitas JA, Schujman SB, Schowalter LJ
4011 - 4015	TEM studies of GaN layers grown in non-polar direction: Laterally overgrown and pendeo-epitaxial layers Liliental-Weber Z
4016 - 4019	High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy Eriguchi K, Hiratsuka T, Murakami H, Kumagai Y, Koukitu A
4020 - 4026	Large-area AlN substrates for electronic applications: An industrial perspective Bondokov RT, Mueller SG, Morgan KE, Slack GA, Schujman S, Wood MC, Smart JA, Schowalter LJ