Journal of Crystal Growth

Journal of Crystal Growth, Vol.279, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (41 articles)

229 - 240	Importance of pulse reversal effect of CdSe thin films for optoelectronic devices Saaminathan V, Murali KR
241 - 247	Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands Wang H, Zeng GC, Song ZJ, Wu YZ, Liao CJ, Le XY, Cai JY, Liu SH
248 - 257	Changes in morphology and growth rate of quasi-one-dimensional ZnSe nanowires on GaAs (100) substrates by metalorganic chemical vapor deposition Leung YP, Liu Z, Hark SK
258 - 271	A microscopically accurate continuum model for void formation during semiconductor silicon processing Frewen TA, Kapur SS, Haeckl W, von Ammon W, Sinno T
272 - 275	Gal(1-x)Mn(1-x)Sb grown on GaSb with mass-analyzed low-energy dual ion beam deposition Chen CL, Chen NF, Liu LF, Wu JL, Liu ZK, Yang SY, Chai CL
276 - 288	On three-dimensional instability of a traveling magnetic field driven flow in a cylindrical container Gelfgat AY
289 - 292	Orientation-dependent nucleation of GaN on a nanoscale faceted Si surface Lee SC, Sun XY, Hersee SD, Brueck SRJ
293 - 302	MBE growth and properties of GaAsSbN/GaAs single quantum wells Wu LJ, Iyer S, Nunna K, Li J, Bharatan S, Collis W, Matney K
303 - 310	Rapid synthesis of gallium nitride powder Wu HQ, Hunting J, Uheda K, Lepak L, Konkapaka P, DiSalvo FJ, Spencer MG
311 - 315	Growth of InN on Ge substrate by molecular beam epitaxy Trybus E, Namkoong G, Henderson W, Doolittle WA, Liu R, Mei J, Ponce F, Cheung M, Chen F, Furis M, Cartwright A
316 - 320	Bismuth surfactant growth of the dilute nitride GaNxAs1-x Young EC, Tixier S, Tiedje T
321 - 328	Crystal structure and electronic structure of GaSe1-xSx series layered solids Ho CH, Wu CC, Cheng ZH
329 - 334	Growth of Ge quantum dot mediated by boron on Ge wetting layer Shi WH, Li CB, Luo LP, Cheng BW, Wang QM
335 - 340	Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition Wu JJ, Han XX, Li JM, Li DB, Lu Y, Wei HY, Cong GW, Liu XL, Zhu QS, Wang ZG
341 - 348	Fabrication of MIM capacitors with 1000 A silicon nitride layer deposited by PECVD for InGaP/GaAs HBT applications So SJ, Oh DS, Sung HK, Park CB
349 - 356	Diamond growth on faceted sapphire and the charged cluster model Saw KG, du Plessis J
357 - 362	Structural and optical properties of YAG : Ce3+ phosphors by sol-gel combustion method Xia GD, Zhou SM, Zhang JJ, Xu J
363 - 368	Growth of lithium niobate crystals with a periodic domain structure by a modified zone melting method Wang WY, Chen XL, Zhang DF, Ni DQ, Wu X
369 - 382	Combined ab initio quantum chemistry and computational fluid dynamics calculations for prediction of gallium nitride growth Sengupta D, Mazumder S, Kuykendall W, Lowry SA
383 - 389	Studies on the growth and characterization of a NLO active sodium substituted lithium p-nitrophenolate single crystal Boaz BM, Das SJ
390 - 393	Growth and luminescence characteristics of undoped LaCl3 crystal by modified bridgman method Pei Y, Chen XF, Mao RH, Ren GH
394 - 402	Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique Asmar RA, Atanas JP, Ajaka M, Zaatar Y, Ferblantier G, Sauvajol JL, Jabbour J, Juillaget S, Foucaran A
403 - 409	Top seeded solution growth of pure and Rh : KTiOPO4 single crystals and their optical and electrical characterization Kannan CV, Ganesamoorthy S, Kimura H, Miyazaki A
410 - 414	Morphologies-controlled synthesis of CaWO4 crystals by a novel supramolecular template method Liu JK, Wu QS, Ding YP
415 - 419	A facile route to synthesize uniform single-crystalline alpha-MnO2 nanowires Gao YQ, Wang ZG, Wan JX, Zou GF, Qian YT
420 - 424	Effect of substrate temperature on the growth of ternary Al-C-N thin films by reactive magnetron sputtering Ji AL, Du Y, Ma LB, Cao ZX
425 - 432	Investigation on small growth pits in 4H silicon carbide epilayers Ma XY, Chang HR, Zhang QC, Sudarshan T
433 - 438	Growth of cadmium selenide nanocrystals on submicron silica Neves MC, Soares J, Hempelmann R, Monteiro T, Trindade T
439 - 446	On the crystallization of calcium carbonate modulated by anionic surfactants Wei H, Shen Q, Zhao Y, Zhou Y, Wang DJ, Xu DF
447 - 453	ZnO thin film formation on Si(111) by laser ablation of Zn target in oxygen atmosphere Fan XM, Lian JS, Guo ZX, Lu HJ
454 - 460	Concentration effect of Mn2+ on the photoluminescence of ZnS : Mn nanocrystals Peng WQ, Qu SC, Cong GW, Wang ZG
461 - 465	Facile fabrication of monodispersed mesoporous celestine particles with peanut-shaped morphology Liu SW, Yu JG, Cheng B, Zhao L, Zhang QJ
466 - 476	Nucleation, growth, and coarsening for two- and three-dimensional phase transitions Madras G, McCoy BJ
477 - 488	Effects of operating conditions on agglomeration and habit of paracetamol crystals in anti-solvent crystallization Yu ZQ, Tan RBH, Chow PS
489 - 493	Synthesis of single-crystal BaTiO3 nanoparticles via a one-step sol-precipitation route Fan GN, Huangpu LX, He XG
494 - 500	Effect of thermal annealing on the structural and the optical properties of ZnO/MgO nanostructures Panin GN, Baranov AN, Oh YJ, Kang TW, Kim TW
501 - 507	Synthesis and size control of CaHPO4 particles in a two-liquid phase micro-mixing process Chen GG, Luo GS, Yang LM, Xu JH, Sun Y, Wang JD
508 - 520	The crystallization mechanism of Al(OH)(3) from sodium aluminate solutions Li HX, Addai-Mensah J, Thomas JC, Gerson AR
521 - 530	Investigation of mass transport phenomena in an upflow cold-wall CVD reactor by gas phase Raman spectroscopy and modeling Hwang JY, Park C, Huang M, Anderson T
531 - 539	Investigation of nucleation and crystal growth kinetics of nickel manganese oxalates Aoun-Habbache M, Guillemet-Fritsch S, Lemaitre J, Jones A
540 - 550	Using directional solidification to determine solid/liquid equilibria in multicomponent phase diagrams Zhao G, Rettenmayr M