Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.8 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (86 articles)

XI - XI	The 17th American Conference on Crystal Growth and Epitaxy The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy The 6th International Workshop on Modeling in Crystal Growth August 9-14, 2009 Preface Lynch C, Derby J, Bhat R, Caneau C, Dost S, Yeckel A
XI - XI	The 17th American Conference on Crystal Growth and Epitaxy The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy The 6th International Workshop on Modeling in Crystal Growth August 9-14, 2009 Preface Derby J, DeYoreo J, Fratello V, Geisz J
1055 - 1058	Growth of KTP crystals with large {001} facets Tseitlin M, Mojaev E, Roth M
1059 - 1064	Growth of large size high optical quality KTP-type crystals Roth M, Tseitlin M
1065 - 1068	Cellular structures in Czochralski-grown SiGe bulk crystal Yonenaga I, Taishi T, Ohno Y, Tokumoto Y
1069 - 1073	Ammonothermal GaN: Morphology and properties Bliss D, Wang BG, Suscavage M, Lancto R, Swider S, Eikenberry W, Lynch C
1074 - 1079	Effects of RF coil position on the transport processes during the stages of sapphire Czochralski crystal growth Lu CW, Chen JC, Chen CH, Chen CH, Hsu WC, Liu CM
1080 - 1084	Low temperature growth of Ga1-xInxP bulk crystals from InSb-rich melt Gennett A, Lewis D, Dutta PS
1085 - 1089	Single crystal growth of InBi1-xSex by syringe pulling method Shah D, Pandya G, Vyas S, Jani M, Jariwala B
1090 - 1094	Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method Houchens BC, Becla P, Tritchler SE, Goza AJ, Bliss DF
1095 - 1097	One-inch diameter vertical gradient freezing furnace for growing Cd1-xZnxTe crystals Ramirez C, Vijayan N, Carcelen V, Dieguez E
1098 - 1103	Crystal growth and physical properties of Ln(2)MGa(12) (Ln=Pr, Nd, and Sm; M=Ni, Cu) Thomas KR, Cho JY, Millican JN, Hembree RD, Moldovan M, Karki A, Young DP, Chan JY
1104 - 1108	Czochralski crystal growth assisted by axial vibrational control technique Avetissov IC, Sadovskii AP, Sukhanova EA, Zharikov EV, Belogorokhov AI, Levonovich BN
1109 - 1113	Optical methods to characterize crystal composition of MgO-doped lithium niobate Jundt DH, Kajiyama MCC, Djukic D, Falk M
1114 - 1117	Quaternary AgGaGenSe2(n+1) crystals for NLO applications Knuteson DJ, Singh NB, Kanner G, Berghmans A, Wagner B, Kahler D, McLaughlin S, Suhre D, Gottlieb M
1118 - 1121	Crystal growth of CsLiB6O10 in a dry atmosphere and from a stoichiometric melt composition Kawamura T, Yoshimura M, Shimizu Y, Nishioka M, Fukushima Y, Kaneda Y, Kitaoka Y, Mori Y, Sasaki T
1122 - 1126	Growth and defect structure of ZnGeP2 crystals Verozubova GA, Okunev AO, Gribenyukov AI, Trofimiv AY, Trukhanov EM, Kolesnikov AV
1127 - 1132	Growth and characterization of large CdSiP2 single crystals Zawilski KT, Schunemann PG, Pollak TC, Zelmon DE, Fernelius NC, Hopkins FK
1133 - 1137	Optical and EPR study of point defects in CdSiP2 crystals Giles NC, Halliburton LE, Yang S, Yang XC, Brant AT, Fernelius NC, Schunemann PG, Zawilski KT
1138 - 1141	Progress in the growth of large scale Ti:sapphire crystals by the heat exchanger method (HEM) for petawatt class lasers Joyce DB, Schmid F
1142 - 1145	Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates Singh NB, Kanner GS, Berghmans A, Kahler D, Lin A, Wagner B, Kelley SP, Knuteson DJ, Holmstrom R, Schepler KL, Peterson R, Fejer MM, Harris JS
1146 - 1149	Low pressure-temperature-gas flow HVPE growth of GaP for nonlinear optical frequency conversion devices Tassev V, Bliss D, Lynch C, Yapp C, Goodhue W, Termkoa K
1150 - 1153	Growth, characterization, non-linear optical properties and dislocation studies in new GCF crystals Khandpekar MM, Pati SP
1154 - 1156	Growth and optical spectroscopy of Ho-doped KPb2Cl5 for infrared solid-state lasers Oyebola O, Hommerich U, Brown E, Trivedi SB, Bluiett AG, Zavada JM
1157 - 1164	Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials Wang CA, Goyal A, Huang R, Donnelly J, Calawa D, Turner G, Sanchez-Rubio A, Hsu A, Hu Q, Williams B
1165 - 1169	InAS(y)P(1-y) metamorphic buffer layers on InP substrates for mid-IR diode lasers Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR, Kuan TS
1170 - 1174	Growth and characterizations of nonpolar [11-20] ZnO on [100] (La,Sr)(Al,Ta)O-3 substrate by chemical vapor deposition Chou MMC, Hang DR, Wang SC, Chen CL, Lee CY
1175 - 1178	The influence of inserted ZnO underlayer on the growth behavior of a-plane GaN on (001) LaAlO3 Wang WL, Ho YT, Liang MH, Peng CY, Chang L
1179 - 1182	Structural property of m-plane ZnO epitaxial film grown on LaAlO3 (112) substrate Wang WL, Ho YT, Chiu KA, Peng CY, Chang L
1183 - 1187	Surface morphology evolution during sputter deposition of thin films -lattice Monte Carlo simulations Zepeda-Ruiz LA, Gilmer GH, Walton CC, Hamza AV, Chason E
1188 - 1192	Atmospheric pressure chemical vapour deposition of electrochromic Mo-W thin oxide films: Structural, optoelectronic and vibration properties Gesheva KA, Ivanova T, Kozlov M, Boyadzhiev S
1193 - 1198	Etching study of dislocations in heavily nitrogen doped SiC crystals Wu P
1199 - 1204	GaN-cored heteronanowires sheathed with Pt shells: Preparation and annealing studies Yang JC, Na HG, Kebede MA, Kim HS, Kim HW
1205 - 1209	Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe Gladkov P, Humlicek J, Hulicius E, Simecek T, Paskova T, Evans K
1210 - 1212	Specific surface free energy of ruby single crystals from Mo- and Pb-based flux Suzuki T, Iguchi E, Soga H
1213 - 1215	Scintillation mechanisms of inorganic materials: From crystal characteristics to scintillation properties Bizarri G
1216 - 1220	Bridgman growth of Cs2LiYCl6:Ce and Li-6-enriched (Cs2LiYCl6)-Li-6:Ce crystals for high resolution gamma ray and neutron spectrometers Higgins WM, Glodo J, Shirwadkar U, Churilov A, Van Loef E, Hawrami R, Ciampi G, Hines C, Shah KS
1221 - 1227	TlBr and TlBrxI1-x crystals for gamma-ray detectors Churilov AV, Ciampi G, Kim H, Higgins WM, Cirignano LJ, Olschner F, Biteman V, Minchello M, Shah KS
1228 - 1232	Growth of InI single crystals for nuclear detection applications Bhattacharya P, Groza M, Cui Y, Caudel D, Wrenn T, Nwankwo A, Burger A, Slack G, Ostrogorsky AG
1233 - 1239	Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection Matuchova M, Zdansky K, Zavadil J, Tonn J, Jafar MMAG, Danilewsky AN, Croll A, Maixner J
1240 - 1243	Crystal growth of K2UO4 and Na4UO5 using hydroxide fluxes Roof IP, Smith MD, zur Loye HC
1244 - 1248	Crystal growth and characterization of LuAG:Ce:Tb scintillator Zhuravleva M, Yang K, Spurrier-Koschan M, Szupryczynski P, Yoshikawa A, Melcher CL
1249 - 1256	Biomimetic mineralization of collagen via an enzyme-aided PILP process Jee SS, Culver L, Li YP, Douglas EP, Gower LB
1257 - 1261	Potential of mean force calculation of the free energy of adsorption of Type I winter flounder antifreeze protein on ice Battle K, Salter EA, Edmunds RW, Wierzbicki A
1262 - 1266	Stress in electrodeposited CoFe alloy films Shao I, Romankiw LT, Bonhote C
1267 - 1270	Real-time intrinsic stress generation during Volmer-Weber growth of Co by electrochemical deposition Luo TZ, Guo L, Cammarata RC
1271 - 1276	Electrochemical atomic layer deposition of copper nanofilms on ruthenium Gebregziabiher DK, Kim YG, Thambidurai C, Ivanova V, Haumesser PH, Stickney JL
1277 - 1281	Growth of polycrystalline silicon on glass for thin-film solar cells Gall S, Becker C, Lee KY, Sontheimer T, Rech B
1282 - 1290	The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process Teng YY, Chen JC, Lu CW, Chen CY
1291 - 1296	GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layer Cederberg JG, Leonhardt D, Sheng JJ, Li QM, Carroll MS, Han SM
1297 - 1300	The effect of substrate material on nucleation behavior of molten silicon for photovoltaics Appapillai A, Sachs E
1301 - 1306	Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN Manning IC, Weng X, Fanton MA, Snyder DW, Redwing JM
1307 - 1310	Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN Chang SP, Yang HC, Lu TC, Kuo HC, Wang SC
1311 - 1315	Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire Ee YK, Li XH, Biser J, Cao WJ, Chan HM, Vinci RP, Tansu N
1316 - 1320	Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods Ling SC, Chao CL, Chen JR, Liu PC, Ko TS, Lu TC, Kuo HC, Wang SC, Cheng SJ, Tsay JD
1321 - 1324	Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0 <= x <= 1) deposition by LP OMVPE Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z
1325 - 1328	Growth mechanism of c-axis-oriented AlN on (111) diamond substrates by metal-organic vapor phase epitaxy Imura M, Nakajima K, Liao MY, Koide Y, Amano H
1329 - 1333	MOVPE growth and properties of non-polar InGaN/GaN multiple quantum wells on gamma-LiAlO2 substrates Hang DR, Chou MMC, Mauder C, Heuken M
1334 - 1339	Factors influencing the purity of electronic grade phosphine delivered to MOCVD tools Feng J, Owens M, Raynor MW
1340 - 1342	Performance of a central delivery system for metalorganic precursors Woelk E
1343 - 1347	High material efficiency MOVPE growth with in situ monitoring Onitsuka R, Sugiyama M, Nakano Y
1348 - 1352	Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si Kondo Y, Deura M, Terada Y, Hoshii T, Takenaka M, Takagi S, Nakano Y, Sugiyama M
1353 - 1358	Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE Deura M, Kondo Y, Takenaka M, Takagi S, Nakano Y, Sugiyama M
1359 - 1363	In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP Terada Y, Shimogaki Y, Nakano Y, Sugiyama M
1364 - 1369	In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells Wang YP, Onitsuka R, Deura M, Yu W, Sugiyama M, Nakano Y
1370 - 1374	High-efficiency quadruple junction solar cells using OMVPE with inverted metamorphic device structures Stan M, Aiken D, Cho B, Cornfeld A, Ley V, Patel P, Sharps P, Varghese T
1375 - 1378	Observation of optical bleaching at 1.06 mu m in AlInAs/AlGaInAs multiple quantum wells Cederberg JG, Bender DA, Pack MV, Schmitt RL
1379 - 1382	Characteristics of mid-IR-emitting deep-well quantum cascade lasers grown by MOCVD Shin JC, D'Souza M, Kirch J, Park JH, Mawst LJ, Botez D
1383 - 1387	InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots Hospodkova A, Hulicius E, Pangrac J, Oswald J, Vyskocil J, Kuldova K, Simecek T, Hazdra P, Caha O
1388 - 1390	Highly strained InAs quantum wells on InP substrates for mid-IR emission Kim S, Kirch J, Mawst L
1391 - 1395	Au-catalyst-free epitaxy of InAs nanowires Forbes D, Hubbard S, Raffaelle R, McNatt JS
1397 - 1401	Silicon EFG process development by multiscale modeling Muller M, Birkmann B, Mosel F, Westram I, Seidl A
1402 - 1406	Numerical study of the effect of magnetic fields in dissolution of silicon into germanium melt Kidess A, Armour N, Dost S
1407 - 1410	Numerical study on transport phenomena in a directional solidification process in the presence of travelling magnetic fields Dropka N, Miller W, Menzel R, Rehse U
1411 - 1415	Formation of parallel (111) twin boundaries in silicon growth from the melt explained by molecular dynamics simulations Pohl J, Muller M, Seidl A, Albe K
1416 - 1420	On the capillary stability of the crystal-crucible gap during dewetted Bridgman process Epure S, Duffar T, Braescu L
1421 - 1424	On the pressure difference ranges which assure a specified gap size for semiconductor crystals grown in terrestrial dewetted Bridgman Braescu L
1425 - 1428	Evaluation of the stress distribution in a cellular microstructure using a phase field model Uehara T
1429 - 1433	Experimental and numerical modeling of Czochralski crystal growth under axial vibrational control of the melt Avetissov IC, Sukhanova EA, Sadovskii AP, Kostikov VA, Zharikov EV
1434 - 1436	Nucleation and successive microstructure evolution via phase-field and phase-field crystal method Prieler R, Li DM, Emmerich H
1437 - 1442	Efficient adaptive three-dimensional phase field simulation of free dendritic growth under natural convection Chen CC, Lan CW
1443 - 1448	Traveling waves of step density and solution supersaturation in the assigned diffusion layer thickness model of step bunching Bredikhin VI, Malshakova OA, Yunakovsky AD
1449 - 1452	Development of a multiscale model for an atomic layer deposition process Adomaitis RA
1453 - 1457	Simulation of the thermal fluctuation according to the melt height in a CZ growth system Nam PO, Yi KW
1458 - 1462	The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system Nam PO, Son SS, Yi KW
1463 - 1467	Multi-scale crystal growth computations via an approximate block Newton method Yeckel A, Lun L, Derby JJ