1 - 8 |
Physical properties of cubic SiC(001) surfaces from first-principles simulations Galli G, Pizzagalli L, Catellani A, Gygi F, Baratoff A |
9 - 18 |
Surface structure of hexagonal SiC surfaces: key to crystal growth and interface formation? Heinz K, Starke U, Bernhardt J, Schardt J |
19 - 24 |
Characterization of the 6H-SiC(0001) surface and the interface with Ti layer with the Schottky limit Hara S |
25 - 29 |
Initial stage of room temperature reaction at Ni/Si(111)-H interfaces Hirose K, Hanta A, Uda M |
30 - 36 |
Reconstruction, step edges and self-organization on the Au(111) surface Repain V, Berroir JM, Rousset S, Lecoeur J |
37 - 41 |
Formation and decay processes of three-dimensional silicon islands on the Si(111)7x7 surface Hayashi K, Ichimiya A |
42 - 47 |
Surface electronic transport on silicon: donor- and acceptor-type adsorbates on Si(111)-root 3 x root 3-Ag substrate Hasegawa S, Tsuchie K, Toriyma K, Tong X, Nagao T |
48 - 55 |
Dynamical fluctuation and surface phase transition at the Sn/Ge(111) root 3 x root 3R30 degrees-alpha interface Avila J, Huttel Y, Le Lay G, Asensio MC |
56 - 61 |
CoO(111) surface study by surface X-ray diffraction Mocuta C, Barbier A, Renaud G |
62 - 68 |
Atomic-scale surface morphology of ultrathin thermal oxide formed on Si(100) surface Fujimura M, Inoue K, Nohira H, Hattori T |
69 - 73 |
The hexagonal polar ZnO(0001)-(1 x 1) surfaces: structural features as stemming from X-ray diffraction Jedrecy N, Sauvage-Simkin M, Pinchaux R |
74 - 77 |
Semiconductor on metal adsorption: Ge tetramers on the Ag(001) surface Oughaddou H, Aufray B, Le Lay G, Gay JM, Zeysing JH, Johnson RL, Barrett N, Guillot C |
78 - 85 |
Quantum well photoemission from atomically uniform Ag films: determination of electronic band structure and quasi-particle lifetime in Ag(100) Paggel JJ, Miller T, Luh DA, Chiang TC |
86 - 93 |
STM-TIP induced surface diffusion of copper on copper (100) Dulot F, Eugene J, Kierren B, Malterre D |
94 - 99 |
Modeling of the beta-SiC(001)(3x2) surface reconstruction Shevlin SA, Fisher AJ |
100 - 110 |
Numerical studies of anomalous fast diffusion in metallic alloys and semiconductors Hasnaoui A, Benmakhlouf A, Hoummada A, Naciri JK, Menai A |
111 - 115 |
Si2H6 adsorption and hydrogen desorption on Si(100) investigated by infrared spectroscopy Niwano M, Shinohara M, Neo Y, Yokoo K |
116 - 121 |
Modeling of a SiO2/Si(001) structure including step and terrace configurations Watanabe T, Ohdomari I |
122 - 132 |
Fractal model of a porous semiconductor Aroutiounian VM, Ghoolinian MZ, Tributsch H |
133 - 138 |
Equilibrium shape changes of nanocrystals induced by strain Muller P, Kern R |
139 - 145 |
Dissociative adsorption of monomethylsilane on Si(100) as revealed by comparative temperature-programmed desorption studies on H/, C2H2/, and MMS/Si(100) Nakazawa H, Suemitsu M |
146 - 151 |
Isotopic shift and broadening of Si-D bending vibration on Si(111) Watanabe S |
152 - 155 |
Theoretical investigation of the island formation on a hydrogen-terminated Si(001) surface Nara J, Ohno T, Kajiyama H, Hashizume T |
156 - 160 |
Surface reaction of CH3SiH3 on Ge(100) and Si(100) Takatsuka T, Fujiu M, Sakuraba M, Matsuura T, Murota J |
161 - 167 |
Adsorption and decomposition of methylsilanes on Si(100) Shinohara M, Maehama T, Niwano M |
168 - 171 |
The role of the surface phases in surface conductivity Tsoukanov DA, Ryzhkov SV, Gruznev DV, Lifshits VG |
172 - 177 |
Nitridation of an InP(001) surface by nitrogen ion beams Suzuki Y, Kumano H, Tomota W, Sanada N, Fukuda Y |
178 - 183 |
High resolution synchrotron radiation PES study of PbPc deposited on Pt(111) Papageorgiou N, Mossoyan JC, Mossoyan-Deneux M, Terzian G, Janin E, Gothelid M, Giovanelli L, Layet JM, Le Lay G |
184 - 189 |
Formation of two-dimensional graphite islands on the Pt(110)(1x2) surface Janin E, Gothelid M, Karlsson UO |
190 - 197 |
Pt3Ti alloy formation on the Pt(111) surface Ringler S, Janin E, Boutonnet-Kizling M, Gothelid M |
198 - 207 |
Structural analysis of epitaxial Fe films on Ni(001) Gazzadi GC, Luches P, D'Addato S, Marassi L, Capelli R, Pasquali L, Valeri S, Nannarone S |
208 - 212 |
First stages in the formation of ultra thin nickel layers on Cu(111) and Ge(111) and dissolution: an AES comparative study Girardeaux C, Tokei Z, Clugnet G, Rolland A |
213 - 218 |
Determination of grain-boundary diffusion coefficients by Auger electron spectroscopy Erdelyi Z, Girardeaux C, Langer GA, Daroczi L, Rolland A, Beke DL |
219 - 226 |
Molecular dynamics simulations for the Ag/Cu (111) system: from segregated to constitutive interfacial vacancies Meunier I, Treglia G, Legrand B, Tetot R, Aufray B, Gay JM |
227 - 232 |
Calculation of scanning inelastic tunneling profiles of adsorbates: acetylene on Cu(100) Mingo N, Makoshi K |
233 - 238 |
Structure and dynamics of NiO(001) and Ni/NiO(001) surfaces by molecular dynamics simulation Karakasidis TE, Papageorgiou DG, Evangelakis GA |
239 - 244 |
Valence spin ordering of the superconducting multilayer below extraordinarily high temperatures Tsukui K, Yata M, Ohdomari I, Osaka T, Yagi N, Tsukui H |
245 - 249 |
Heterostructures of La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3 grown by pulsed laser deposition on (001) SrTiO3 Lyonnet R, Maurice JL, Hytch MJ, Michel D, Contour JP |
250 - 255 |
Negative electron affinity and electron emission at cesiated GaN and AlN surfaces Wu CI, Kahn A |
256 - 262 |
Islands as catalyst for film relaxation in Bi-mediated Ge epitaxy on Si(111) Falta J, Schmidt T, Materlik G, Zeysing J, Falkenberg G, Johnson RL |
263 - 269 |
Role of In(4 x 1) superstructure on the heteroepitaxy of InSb on Si(111) substrate Rao BV, Okamoto T, Shinmura A, Gruznev D, Tambo T, Tatsuyama C |
270 - 274 |
Epitaxy of ionic insulators on a vicinal metal substrate: KCl and RbI on Cu(211) Folsch S, Helms A, Rieder KH |
275 - 279 |
Near-field optical microscopy with a free-electron laser in the 1-10-mu m spectral range Cricenti A |
280 - 292 |
Atomic layer deposition of Al2O3 and SiO2 on BN particles using sequential surface reactions Ferguson JD, Weimer AW, George SM |
293 - 298 |
Transition from random to island growth mode during Si(100)-(2 x 1) dry oxidation and its description with autocatalytic reaction model Suemitsu M, Enta Y, Miyanishi Y, Takegawa Y, Miyamoto N |
299 - 303 |
In situ electron spin resonance of initial oxidation processes of Si surfaces Umeda T, Yamasaki S, Nishizawa M, Yasuda T, Tanaka K |
304 - 308 |
Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides Nohira H, Hirose K, Takahashi K, Hattori T |
309 - 318 |
Effects of electron irradiation on the structure and morphology of CaF2/Si(111) Wollschlager J, Hildebrandt T, Kayser R, Viernow J, Klust A, Batjer J, Hille A, Schmidt T, Falta J |
319 - 325 |
Real-time analysis of alternating growth on GaAs(001) by core-level photoelectron spectroscopy Maeda F, Watanabe Y |
326 - 331 |
Low-temperature (200 degrees C) growth of diamond on nano-seeded substrates Hiraki A |
332 - 339 |
Self assembling growth of triangular pyramidal ge islands on a Si(111)-root 3 x root 3-R30 degrees-B surface phase Schulze J, Stimpel T, Baumgartner H, Eisele I |
340 - 345 |
Combined photoelectron and X-ray diffraction from ultrathin Fe films on Cu3Au(001) Bruno F, Cvetko D, Floreano L, Gotter R, Mannori C, Mattera L, Moroni R, Prandi S, Terreni S, Verdini A, Canepa M |
346 - 353 |
The screening of a potential of charged centers by quasi-two-dimensional electrons in transverse electric field Aghababyan GS, Aroutiounian VM, Mikaelyan LV, Petrosyan SG |
354 - 358 |
Self-surfactant effect of As on a GaAs(111)A surface Taguchi A, Shiraishi K, Ito T |
359 - 367 |
Preparation of a 10 nm thick single-crystal silicon membrane self-supporting over a diameter of 1 mm Utteridge SJ, Sashin VA, Canney SA, Ford MJ, Fang Z, Oliver DR, Vos M, Weigold E |
368 - 374 |
Studies on thermal property and atomic structure of the (Bi,Sb) /Si(111) surface Yuhara J, Matsuda K, Hattori Y, Morita K |
375 - 379 |
Electronic structure of alpha and gamma phases of Si(111)-root 3 x root 3-Sn Charrier A, Themlin JM, Thibaudau F, Forbeaux I, Debever JM |
380 - 383 |
Sb-terminated Si(110), Si(100) and Si(111) surfaces studied with high resolution core-level spectroscopy Cricenti A, Ottaviani C, Comicioli C, Crotti C, Ferrari L, Quaresima C, Perfetti P, Le Lay G |
384 - 389 |
In-situ STM studies of the self-assembling formation of boron surface phases on Si(111) Stimpel T, Schulze J, Hoster HE, Eisele I, Baumgartner H |
390 - 394 |
Atomic-layer adsorption of P on Si(100) and Ge(100) by PH3 using an ultraclean low-pressure chemical vapor deposition Shimamune Y, Sakuraba M, Matsuura T, Murota J |
395 - 400 |
Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy Ohmori K, Zaima S, Yasuda Y |
401 - 405 |
Conducting atomic force microscopy studies on local electrical properties of ultrathin SiO2 films Ando A, Hasunuma R, Maeda T, Sakamoto K, Miki K, Nishioka Y, Sakamoto T |
406 - 412 |
Solid-state graphitization mechanisms of silicon carbide 6H-SiC polar faces Forbeaux I, Themlin JM, Charrier A, Thibaudau F, Debever JM |
413 - 418 |
Self-organized 1D nanostructures on the beta-SiC(100) surface: silicon atomic lines and dimer vacancy chains Derycke V, Pham NP, Fonteneau P, Soukiassian P, Aboulet-Nze P, Monteil Y, Mayne AJ, Dujardin G, Gautier J |
419 - 424 |
Adsorption processes of Se on the GaAs(111)A-(2x2) surface Ohtake A, Komura T, Hanada T, Miwa S, Yasuda T, Yao T |
425 - 429 |
Growth and optimization of InAs/GaSb and GaSb/InAs interfaces Tahraoui A, Tomasini P, Lassabatere L, Bonnet J |
430 - 434 |
Macrostep and mound formation during AlGaAs growth on vicinal GaAs(110) studied by scanning tunneling microscopy Hasegawa S, Arakawa K, Oooka H, Nakashima H |
435 - 439 |
Oxidation process of an Al micro-cluster Hoshino T, Sekino A, Hata M, Tsuda M |
440 - 444 |
Stable structures of Al micro-clusters and their characteristics for electric charging Ueno J, Hoshino T, Hata M, Tsuda M |
445 - 451 |
Changes in the dipolar vibrational fingerprint of C-60 upon adsorption and K intercalation Silien C, Caudano Y, Peremans A, Thiry PA |
452 - 456 |
Carbon nanotube synthesized on metallic substrates Emmenegger C, Mauron P, Zuttel A, Nutzenadel C, Schneuwly A, Gallay R, Schlapbach L |
457 - 463 |
Dependence of the electron affinity of homoepitaxially grown CVD diamond on the amount of surface oxygen Yokoyama M, Ito T |
464 - 468 |
Electron-beam-induced patterning of thin film arsenic-based chalcogenides Mietzsch K, Fitzgerald AG |
469 - 473 |
MBE-growth of novel MnF2-CaF2 superlattices on Si(111) and their characterization Sokolov NS, Takeda Y, Banshchikov AG, Harada J, Inaba K, Ofuchi H, Tabuchi M, Yakovlev NL |
474 - 478 |
Optical detection of electron transfer through interfaces in CdF2 : Eu-CdF2 SLs Suturin SM, Basun SA, Gastev SV, Langer JM, Meltzer RS, Sokolov NS |
479 - 491 |
Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions Klaus JW, Ferro SJ, George SM |
492 - 498 |
Influence of oxidation conditions on the properties of indium oxide thin films Girtan M, Rusu GI, Rusu GG, Gurlui S |
499 - 503 |
Flat-band voltage control of a back-gate MOSFET by single ion implantation Shinada T, Ishikawa A, Hinoshita C, Koh M, Ohdomari I |
504 - 507 |
Analysis of metal features produced by uv irradiation of organometallic films Berry GJ, Cairns JA, Davidson MR, Fan YC, Fitzgerald AG, Thomson J, Shaikh W |
508 - 512 |
The 3D unoccupied band structure of graphite by very-low-energy electron diffraction Strocov VN, Blaha P, Starnberg HI, Claessen R, Debever JM, Themlin JM |
513 - 518 |
A chemical and morphological study of fullerene derivatives Langmuir-Blodgett films Giovanelli L, Le Lay G |
519 - 528 |
Physical properties of self-assembled nanosized cobalt particles Petit C, Pileni MP |
529 - 536 |
Growth of self-organized nanosized Co pillars in Au(111) using an alternating deposition process Fruchart O, Klaua M, Barthel J, Kirschner J |
537 - 546 |
Electronic transport in ultrathin epitaxial Pb films on Si(111) surfaces Pfennigstorf O, Lang K, Gunter HL, Henzler M |
547 - 552 |
Analysis on electrical properties of ultrathin SiO2/Si(111) interfaces with an atomic force microscope Hasunuma R, Ando A, Miki K, Nishioka Y |
553 - 558 |
Local photon emission of self-assembled metal nanoparticles Taleb A, Gusev AO, Silly F, Charra F, Pileni MP |
559 - 564 |
1D electronic properties in temperature-induced c(4x2) to 2x1 transition on the beta-SiC(100) surface Enriquez H, Derycke V, Aristov VY, Soukiassian P, Le Lay G, di Cioccio L, Cricenti A, Croti C, Ferrari L, Perfetti P |
565 - 570 |
Quantum size effect in TiO2 nanoparticles: does it exist? Monticone S, Tufeu R, Kanaev AV, Scolan E, Sanchez C |
571 - 575 |
Thermodynamic aspects of the interaction of hydrogen with Pd clusters Zuttel A, Nutzenadel C, Schmid G, Emmenegger C, Sudan P, Schlapbach L |
576 - 583 |
Kinetic evolution of self-organised SiGe nanostructures Ronda A, Abdallah M, Gay JM, Stettner J, Berbezier I |
584 - 589 |
Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001) Brault J, Gendry M, Marty O, Pitaval M, Olivares J, Grenet G, Hollinger G |
590 - 594 |
One-dimensional alignment of InAs dots on strain-controlled InGaAs layers by selective-area molecular-beam epitaxy Yamaguchi K, Hiraike T, Kawaguchi K |
595 - 598 |
Nanostructures obtained by self-organization of silicon surfaces Rottger B, Hanbucken M, Neddermeyer H |
599 - 603 |
Simple nanostructuring on silicon surface by means of focused beam patterning and wet etching Koh M, Sawara S, Shinada T, Goto T, Ando Y, Ohdomari I |
604 - 612 |
Influence of the substrate on the self-assemblies of silver sulfide nanocrystals Motte L, Lacaze E, Maillard M, Pileni MP |
613 - 619 |
Transmission through Peierls distorted one-dimensional atomic wires: quantum coherent electron-phonon coupling Ness H, Fisher AJ |
620 - 624 |
Probing the internal structure of nanowires McLean AB, Hill IG |
625 - 629 |
Effect of strain on the chemical bonds in InAs nanocrystals self-organized on GaAs and Se-terminated GaAs surfaces Watanabe Y, Maeda F |
630 - 637 |
A novel STM-based depth profiling technique for the electronic characterisation of thin film materials Fan Y, Fitzgerald AG, Cairns JA, John P, Troupe CE, Wilson JIB |
638 - 643 |
Co-deposition of In and Sn on the Si(100)2x1 surface: growth of a one-dimensional alloy? Jure L, Magaud L, Mallet P, Veuillen JY |
644 - 649 |
Cluster calculations of optical absorption spectra of 2D metal particles arrays: cluster size effects Russier V, Pileni MP |
650 - 654 |
Self-formed quantum nano-structures by selective area MOVPE and their application to GaAs single electron devices Nakajima F, Motohisa J, Fukui T |
655 - 661 |
Optical anisotropy of organized silver nanoparticles in 2D superlattice Taleb A, Russier V, Courty A, Pileni MP |
662 - 665 |
Nucleation and growth of Cu clusters on highly oriented pyrolytic graphite observed with an in situ electrochemical scanning tunneling microscope Tanii T, Hara K, Ishibashi K, Ohta K, Ohdomari I |
666 - 669 |
Charge density waves affected by Rb nanowire network formation on 1T-TaS2 Adelung R, Brandt J, Tarcak L, Kipp L, Skibowski M |
670 - 678 |
Reactivity of metal nanoclusters: nitric oxide adsorption and CO plus NO reaction on Pd/MgO model catalysts Piccolo L, Henry CR |
679 - 684 |
CO adsorption on Al2O3-supported Pd clusters: XPS study Johanek V, Stara I, Tsud N, Veltruska K, Matolin V |
685 - 689 |
ESR studies of magnetic clusters in Li1-xNi1+xO2 Reynaud F, Ghorayeb AM, Ksari Y, Stepanov A, Delmas C |
XIII - XIII |
ACSIN-5 - Proceedings of the Fifth International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures - Aix en Provence, France, July 6-9, 1999 - Preface Bernardini J, Dallaporta H, Le Lay G, Soukiassian P |