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Progress in Applied Surface, Interface and Thin Film Science 2012 Solar Renewable Energy News III, May 14-18, 2012, Florence, Italy (SURFINT-SREN III) Preface Pincik E |
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Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions Akhundov IO, Alperovich VL, Latyshev AV, Terekhov AS |
7 - 11 |
The electronic properties of nickel phosphide surfaces: Angle-resolved and resonant photoemission studies Edamoto K |
12 - 16 |
Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers Frigeri C, Serenyi M, Csik A, Szekrenyes Z, Kamaras K, Nasi L, Khanh NQ |
17 - 22 |
Huge field-effect surface charge injection and conductance modulation in metallic thin films by electrochemical gating Tortello M, Sola A, Sharda K, Paolucci F, Nair JR, Gerbaldi C, Daghero D, Gonnelli RS |
23 - 28 |
Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals Horvath ZJ, Basa P, Jaszi T, Molnar KZ, Pap AE, Molnar G |
29 - 32 |
The distribution of elements in sequentially prepared MgB2 on SiC buffered Si substrate and possible pinning mechanisms Chromik S, Nishida A, Strbik V, Gregor M, Espinos JP, Liday J, Durny R |
33 - 36 |
Interaction of non-equilibrium oxygen plasma with sintered graphite Cvelbar U |
37 - 40 |
Structural and electroluminescent properties of Si quantum dots/SiC multilayers Rui YJ, Li SX, Cao YQ, Xu J, Li W, Chen KJ |
41 - 44 |
First principles calculations of magnetic properties of Rh-doped SnO2(110) surfaces Bouamra F, Boumeddiene A, Rerat M, Belkhir H |
45 - 49 |
On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films Van Bui H, Kovalgin AY, Wolters RAM |
50 - 54 |
Acoustic spectroscopy and electrical characterization of Si/NAOS-SiO2/HfO2 structures Bury P, Matsumoto T, Bellan I, Janek M, Kobayashi H |
55 - 59 |
Modeling the reactive sputter deposition of N-doped TiO2 for application in dye-sensitized solar cells: Effect of the O-2 flow rate on the substitutional N concentration Duarte DA, Sagas JC, Sobrinho ASD, Massi M |
60 - 64 |
Ohmic contacts to p-GaP/n-ZnO core/shell nanowires based on Au metallization Dujavova-Laurencikova A, Hasenohrl S, Elias P, Stoklas R, Blaho M, Novotny I, Krizanova Z, Novak J |
65 - 71 |
Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD ( plus IBAD) methods. Part 1: Effective relative permittivity Hartmanova M, Nadazdy V, Kundracik F, Mansilla C |
72 - 76 |
Zinc-doped gallium phosphide nanowires for photovoltaic structures Hasenohrl S, Elias P, Soltys J, Stoklas R, Dujavova-Laurencikova A, Novak J |
77 - 80 |
Structure analysis of CoFeBSiNb(Ga) pseudobulk metallic glasses Hosko J, Janotova I, Svec P, Matko I, Janickovic D, Svec P |
81 - 87 |
Sputtered ITO for application in thin-film silicon solar cells: Relationship between structural and electrical properties Hotovy J, Hupkes J, Bottler W, Marins E, Spiess L, Kups T, Smirnov V, Hotovy I, Kovac J |
88 - 91 |
The effect of neutron irradiation on the properties of SiC and SiC(N) layer prepared by plasma enhanced chemical vapor deposition Huran J, Valovic A, Bohacek P, Shvetsov VN, Kobzev AP, Borzakov SB, Kleinova A, Sekacova M, Arbet J, Sasinkova V |
92 - 97 |
Characteristics of the electromagnetic interference shielding effectiveness of Al-doped ZnO thin films deposited by atomic layer deposition Choi YJ, Gong SC, Johnson DC, Golledge S, Yeom GY, Park HH |
98 - 101 |
Significant increasing of onset temperature of FM transition in LSMO thin films Chromik S, Strbik V, Dobrocka E, Dujavova A, Reiffers M, Liday J, Spankova M |
102 - 105 |
The study of structure of Fe-B-P based metallic glasses Janotova I, Hosko J, Svec P, Matko I, Janickovic D, Svec P, Gemming T, Stoica M |
106 - 109 |
FT IR spectroscopy of silicon oxide layers prepared with perchloric acid Kopani M, Mikula M, Takahashi M, Rusnak J, Pincik E |
110 - 115 |
Sputtered TiO2 thin films with NiO additives for hydrogen detection Kosc I, Hotovy I, Rehacek V, Griesseler R, Predanocy M, Wilke M, Spiess L |
116 - 119 |
2D irregular structure in the LED surface patterned by NSOM lithography Kubicova I, Pudis D, Skriniarova J, Kovac J, Jaroslav K, Jakabovic J, Suslik L, Novak J, Kuzma A |
120 - 124 |
Plume study by ion probe and morphology control during pulsed laser deposition of Sm1-xNdxNiO3 Lafane S, Kerdja T, Ngom BD, Abdelli-Messaci S, Malek S |
125 - 128 |
The effect of multiwalled carbon nanotube doping on the CO gas sensitivity of TiO2 xerogel composite film Lee JS, Ha TJ, Hong MH, Park CS, Park HH |
129 - 133 |
Optical absorption and charging effect in nano-crystalline Ge/SiNx multilayers Li C, Xu J, Xu L, Li W, Jiang XF, Sun SH, Chen KJ |
134 - 137 |
Asymptotic properties of the variables of the roughness surface Macurova A, Macura D |
138 - 142 |
Quantification of InxGa1-xP composition modulation by nanometric scale HAADF simulations Pastore CE, Gutierrez M, Araujo D, Rodriguez-Messmer E |
143 - 147 |
Behaviour of amorphous silicon carbide in Au/a-SiC/Si heterostructures prepared by PECVD technology using two different RF modes Perny M, Mikolasek M, Saly V, Ruzinsky M, Durman V, Pavuk M, Huran J, Orszagh J, Matejcik S |
148 - 154 |
About electrical properties of passivated SiO2/Si structures prepared electro-chemically in HClO4 solutions Pincik E, Kobayashi H, Rusnak J, Takahashi M, Brunner R |
155 - 160 |
Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method Priesol J, Satka A, Uherek F, Donoval D, Shields P, Allsopp DWE |
161 - 165 |
Effect of 2D photonic structure patterned in the LED surface on emission properties Pudis D, Suslik L, Skriniarova J, Kovac J, Kovac J, Kubicova I, Martincek I, Hascik S, Schaaf P |
166 - 170 |
GlyHisGlyHis immobilization on silicon surface for copper detection Sam S, Gouget-Laemmel AC, Chazalviel JN, Ozanam F, Gabouze N |
171 - 174 |
Electrocatalytic and photocatalytic activity of Pt-TiO2 films on boron-doped diamond substrate Spataru T, Marcu M, Spataru N |
175 - 179 |
Electrical characterization of the A(III)B(V)-N heterostructures by capacitance methods Stuchlikova L, Harmatha L, Petrus M, Rybar J, Sebok J, Sciana B, Radziewicz D, Pucicki D, Tlaczala M, Kosa A, Benko P, Kovac J, Juhasz P |
180 - 183 |
Electrochemical gas sensors based on polypyrrole-porous silicon Tebizi-Tighilt FZ, Zane F, Belhaneche-Bensemra N, Belhousse S, Sam S, Gabouze NE |
184 - 187 |
Surface potential patterning of hydroxyapatite films by focused electron beam: Influence of the electron energy Truchly M, Plecenik T, Secianska K, Gregor M, Zahoran M, Vargova M, Mikula M, Grancic B, Plesch G, Tofail SAM, Kus P, Plecenik A |