Applied Surface Science

Applied Surface Science, Vol.188, No.1-2 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (35 articles)

1 - 3	Kinetic effects in heteroepitaxial growth Tersoff J
4 - 8	Stress, strain and elastic energy at nanometric Ge dots on Si(001) Raiteri P, Valentinotti F, Miglio L
9 - 18	Elastic relaxation of isolated and interacting truncated pyramidal quantum dots and quantum wires in a half space Glas F
19 - 23	Growth and relaxation mechanisms in La0.66Sr0.33MnO3 manganites deposited on SrTiO3(001) and MgO(001) Casanove MJ, Roucau C, Baules P, Majimel J, Ousset JC, Magnoux D, Bobo JF
24 - 28	Kinetic Monte Carlo simulation of intermixing during semiconductor heteroepitaxy Rouhani MD, Kassem H, Dalla Torre J, Landa G, Esteve D
29 - 35	Characterisation of Y2O3 thin films deposited by laser ablation on MgO: why a biaxial epitaxy Gaboriaud RJ, Pailloux F, Paumier F
36 - 48	Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress Salviati G, Ferrari C, Lazzarini L, Nasi L, Drigo AV, Berti M, De Salvador D, Natali M, Mazzer M
49 - 54	Strain relaxation and dislocation patterning in PbTe/PbSe (001) lattice-mismatched heteroepitaxy Wiesauer K, Springholz G
55 - 60	TEM evaluation of epitaxial strain in III-V semi-conductors: evidence of coherent and incoherent stress relaxation Rocher A, Ponchet A, Blanc S, Fontaine C
61 - 68	Exploiting long-range atomic ordering for the investigation of strain relaxation in lattice-mismatched epitaxy - A case study on CUPtB-type ordered (GaIn)P on GaAs Spiecker E, Seibt M, Schroter W, Winterhoff R, Scholz F
69 - 74	Measurement and interpretation of strain by high-resolution X-ray diffraction Dunstan DJ
75 - 79	Limited in incorporation during pseudomorphic InAs/GaAs growth and quantum dot formation observed by in situ stress measurements Silveira JP, Garcia JM, Briones F
80 - 84	Microstructural analysis in epitaxial zirconia layers Boulle A, Pradier L, Masson O, Guinebretiere R, Dauger A
85 - 89	Strain effect on interatomic distances in InGaAs/InP epitaxial layers Tormen M, De Salvador D, Boscherini F, Romanato F, Drigo AV, Mobilio S
90 - 96	Strains and stresses in an epitaxial Ni(111)/Mo(110) multilayer grown by direct ion beam sputtering Martin F, Pacaud J, Abadias G, Jaouen C, Guerin P
97 - 102	Stress and strain in two-dimensional epitaxial growth: nucleation density effect on the in-plane lattice spacing oscillations Turban P, Muller P, Lapena L, Andrieu S
103 - 109	Real-time diagnostics of growth of germanium nanocrystallites on partially hydrogen-terminated silicon surfaces by spectroscopic ellipsometry Schmitt F, Osipov AV, Hess P
110 - 114	Chemically diffuse interface in (111) Au-Ni multilayers: an anomalous X-ray diffraction analysis Bigault T, Bocquet F, Labat S, Thomas O, Renevier H
115 - 121	Structure and morphology of thin cobalt films deposited on vicinal surface Cu(1111) Midoir AC, Magnan H, Barbier L, Le Fevre P, Chandesris D
122 - 127	Ab initio study of Mg adatom and MgO molecule adsorption and diffusion on the MgO(001) surface Geneste G, Morillo J, Finocchi F
128 - 133	In situ detection of an initial elastic relaxation stage during growth of In0.2Ga0.8As on GaAs(001) Gonzalez MU, Gonzalez Y, Gonzalez L
134 - 139	Atomistic simulations of relaxation and reconstruction phenomena in heteroepitaxy: Co/Au(111) Goyhenex C, Bulou H, Deville JP, Treglia G
140 - 145	Shape and stability of heteroepitaxial metallic islands: effects of the electronic configuration Mazzone AM, Mattei G
146 - 150	Epitaxy stabilised CaF2-type ternary Co1-xFexSi2) silicides on Si(111): DAFS and HRTEM measurements Ersen O, Pierron-Bohnes V, Ulhaq-Bouillet C, Pirri C, Tuilier MH, Berling D, Bertoncini P, Gailhanou M, Thiaudiere D
151 - 155	Surface morphology of NiO layers on MgO(001), MgO(110) and MgO(111) Warot B, Snoeck E, Ousset JC, Casanove MJ, Dubourg S, Bobo JF
156 - 162	Stress-driven nucleation of coherent islands: theory and experiment Osipov AV, Schmitt F, Kukushkin SA, Hess P
163 - 169	Surface mismatch and stress relief mechanisms at metallic surfaces Bulou H, Goyhenex C
170 - 175	Strain-induced magnetic anisotropy in epitaxial manganite films Ranno L, Llobet A, Tiron R, Favre-Nicolin E
176 - 181	Strain and magnetism in (La0.7Sr0.3)MnO3 very thin films epitaxially grown on SrTiO3 Maurice JL, Pailloux F, Barthelemy A, Rocher A, Durand O, Lyonnet R, Contour JP
182 - 187	Microstructural analysis of AU/NI multilayers interfaces by SAXS and STM Labat S, Guichet C, Thomas O, Gilles B, Marty A
188 - 192	In situ measurements of As/P exchange during InAs/InP(001) quantum wires growth Gonzalez MU, Garcia JM, Gonzalez L, Silveira JP, Gonzalez Y, Gomez JD, Briones F
193 - 201	Compliant effect in twist-bonded systems Rohart S, Grenet G, Priester C
202 - 208	Magnetotransport properties of fully strained epitaxial thin films of La2/3Ca1/3MnO3 grown on SrTiO3 Bibes M, Casanove MJ, Balcells L, Valencia S, Martinez B, Ousset JC, Fontcuberta J
209 - 213	The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution Akchurin RK, Andreev AY, Govorkov OI, Marmalyuk AA, Petrovsky AV
214 - 218	Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED Benedetti A, Cullis AG, Armigliato A, Balboni R, Frabboni S, Mastracchio GF, Pavia G