Applied Surface Science

Applied Surface Science, Vol.234, No.1-4 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (83 articles)

1 - 1	The Ninth International Conference on the formation of Semiconductor Interfaces - ICFSI-9 - Madrid, ETSII, Spain, September 15-19, 2003 -Foreword Flores F, de Seqovia JL
2 - 10	STM patterning of SnO2 nanocrystalline surfaces Maffeis TGG, Owen GT, Penny M, Ferkel HS, Wilks SP
11 - 15	Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy Sato T, Tamai I, Yoshida S, Hasegawa H
16 - 21	MnAs nanoclusters embedded in GaAs: synthesis and properties Moreno M, Trampert A, Daweritz L, Ploog KH
22 - 27	Organic-GaAs heterostructure diodes for microwave applications Ginev G, Riedl T, Parashkov R, Johannes HH, Kowalsky W
28 - 32	TEM study of GaAs/GaSb QD heterostructures Sitnikova AA, Lublinskaya OG, Toropov AA, Rykhova O, Konnikov SG, Ivanov SV
33 - 37	Electronic spectra of GaAs/GaxAl1-xAs superlattice with impurities arranged according to a Fibonacci sequence Vasconcelos MS, Mauriz PW, Albuquerque EL, da Silva EF, Freire VN
38 - 44	Inhomogeneous broadening arising from interface fluctuations in strained InxGa1-xAs/GaAs and (InuGa1-uAs)(v)(InP)(1-v)/InP quantum wells Oliveira CLN, Freire JAK, Freire VN, Farias GA
45 - 49	Optical phonons in InAs and AlAs quantum dot structures Milekhin AG, Toropova AI, Bakarov AK, Ladanov MY, Zanelatto G, Galzerani JC, Schulze S, Zahn DRT
50 - 53	Optical properties of zincblende GaN/BN cylindrical nanowires Caetano EWS, Freire VN, Farias GA, da Silva EF
54 - 59	Electrical behaviour of Al/SiGe/Si heterostructures: effect of surface treatment and dislocations Horvath ZJ, Adam M, Szabo I, Orlov LK, Potapov A, Tolomasov VA
60 - 66	Investigation of the morphology and electrical characteristics of FeSi2 quantum dots on silicon Dozsa L, Molnar G, Horvath ZJ, Toth AL, Gyulai J, Raineri V, Giannazzo F
67 - 71	Electrical behaviour of Al/SiO2/Si structures with SiC nanocrystals Horvath ZJ, Dozsa L, Krafcsik OH, Mohacsy T, Vida G
72 - 77	Selective growth of carbon nanostructures on nickel implanted nanopyramid array Ferrer D, Shinada T, Tanii T, Kurosawa J, Zhong G, Kubo Y, Okamoto S, Kawarada H, Ohdomari I
78 - 81	Effect of rare earth ions-doping on the chemical and optical features of nano-crystalline (Er, Tb :) Si thin films Park MB, Han KH, Shim JH, Namgung C, Cho NH
82 - 85	Macroscopic and microscopic investigations of the effect of gas exposure on nanocrystalline SnO2 at elevated temperature Maffeis TGG, Penny A, Teng KS, Wilks SP, Ferkel HS, Owen GT
86 - 92	Total internal reflection fluorescence microscopy - a powerful tool to study single quantum dots Kobitski AY, Heyes CD, Nienhaus GU
93 - 101	Mono- and multilayered opalline superlattices: application to nanotechnology of 2D ordered array of nanoobjects and 3D metalattices Bozhko SI, Chaika AN, Emelchenko GA, Masalov VM, Ionov AM, Gruzintsev AN, Mikhailov GM, Medvedev BK
102 - 106	Preferential immobilization of biomolecules on silicon microstructure array by means of electron beam lithography on organosilane self-assembled monolayer resist Tanii T, Hosaka T, Miyake T, Zhang GJ, Zako T, Funatsu T, Ohdomari I
107 - 112	Barrier formation at metal-organic interfaces: dipole formation and the charge neutrality level Vazquez H, Flores F, Oszwaldowski R, Ortega J, Perez R, Kahn A
113 - 119	Metal deposition onto biomolecular layers on silicon surfaces: a study of interface formation using Raman spectroscopy Silaghi SD, Scholz R, Salvan G, Suzuki YJ, Friedrich M, Kampen TU, Zahn DRT
120 - 125	Interaction of caesium with poly(p-phenylene vinylene)E surfaces van Elsbergen V, Weijtens C, Zaumseil J
126 - 130	Changes in the electronic structure of DiMePTCDI films on S-GaAs(100) upon exposure to oxygen Gavrila G, Mendez H, Kampen TU, Zahn DRT
131 - 137	Growth and morphology of SnPc films on the S-GaAs(001) surface: a combined XPS, AFM and NEXAFS study Vearey-Roberts AR, Steiner HJ, Evans S, Cerrillo I, Mendez J, Cabailh G, O'Brien S, Wells JW, McGovern IT, Evans DA
138 - 143	Thickness dependence of the LUMO position for phthalocyanines on hydrogen passivated silicon (111) Gorgoi M, Michaelis W, Kampen TU, Schlettwein D, Zahn DRT
144 - 148	Synchrotron radiation studies of the growth and beam damage of tin-phthalocyanine on GaAs(001)-1x6 substrates Cabailh G, Wells JW, McGovern IT, Vearey-Roberts AR, Bushell A, Evans DA
149 - 154	Impedance spectroscopy study of metal-organic-metal structures Bekkali A, Thurzo I, Kampen TU, Zahn DRT
155 - 161	Methylchloride adsorbed on Si(001): an ab initio study Preuss M, Schmidt WG, Seino K, Bechstedt F
162 - 167	Structural and chemical property of unsaturated cyclic-hydrocarbon molecules regularly chemisorbed on Si(001) surface Akagi K, Tsuneyuki S, Yamashita Y, Hamaguchi K, Yoshinobu J
168 - 172	Monitoring of In and Ag growth on PTCDA and DiMe-PTCDI thin films Paez BA, Salvan G, Silaghi S, Scholz R, Kampen TU, Zahn DRT
173 - 177	Theoretical study of the adsorption of a PTCDA monolayer on S-passivated GaAs(100) Szucs B, Hajnal Z, Scholz R, Sanna S, Frauenheim T
178 - 184	Modification of GaAs(100) surfaces upon adsorption of perylene derivatives Salvan G, Silaghi S, Paez B, Kampen TU, Zahn DRT
185 - 189	Adsorption and decomposition of acetone on Si(001) Ferraz AC, Miotto R
190 - 196	Atomistic model structure of the Si(100)-SiO2 interface from a synthesis of experimental data Bongiorno A, Pasquarello A
197 - 201	Dependence of SiO2/Si interface structure on low-temperature oxidation process Hattori T, Azuma K, Nakata Y, Shioji M, Shiraishi T, Yoshida T, Takahashi K, Nohira H, Takata Y, Shin S, Kobayashi K
202 - 206	XPS analysis of carrier trapping phenomena in ultrathin SiO2 film formed on Si substrate Hirose K, Kawashiri S, Hattori I
207 - 213	Improved interatomic potential for stressed Si, O mixed systems Watanabe T, Yamasaki D, Tatsumura K, Ohdomari I
214 - 217	Cathodoluminescence study of Si/SiO2 interface structure Zamoryarskaya MV, Sokolov VI, Plotnikov V
218 - 221	delta(r) type model for interface defects in Si/SiO2 nanocrystals de Sousa JS, Freire VN, da Silva EF
222 - 227	Field effect of fixed negative charges on oxidized silicon induced by AlF3 layers with fluorine deficiency Konig D, Zahn DRT, Ebest G
228 - 233	Shallow boron dopant on silicon - An MD study Perez-Martin AMC, Jimenez-Rodriguez JJ, Jimenez-Saez JC
234 - 239	Study of the oxidation for Si nanostructures using synchrotron radiation photoemission spectroscopy Nath KG, Shimoyama I, Sekiguchi T, Baba Y
240 - 245	Enhanced tunneling in stacked gate dielectrics with ultra-thin HfO2 layers sandwiched between thicker SiO2 layers Hinkle CL, Fulton C, Nemanich RJ, Lucovsky G
246 - 250	Electronic structures of ultra-thin silicon carbides deposited on graphite Baba Y, Sekiguchi T, Shimoyama I, Nath KG
251 - 255	Structural reorganisation of vicinal surfaces on 6H-SiC(0001) induced by hot hydrogen etching Wulfhekel W, Sander D, Nitsche S, Dulot F, Leycuras A, Hanbucken M
256 - 261	PL and EL features of p-type porous silicon prepared by electrochemical anodic etching Kim DA, Shim JH, Cho NH
262 - 267	Mechanism of hydrogen, oxygen and humidity sensing by Cu/Pd-porous silicon-silicon structures Litovchenko VG, Gorbanyuk TI, Solntsev VS, Evtukh AA
268 - 273	Nanostructural features of nc-Si : H thin films prepared by PECVD Shim JH, Im S, Cho NH
274 - 285	Surface phase transitions at metal-semiconductor interfaces: a revisit is needed Davila ME, Avila J, Ascolani H, Le Lay G, Gothelid M, Karlsson UO, Asensio MC
286 - 291	Si-substitutional defects on the alpha-Sn/Si(111)-(root 3 x root 3) surface Kaminski W, Jelinek P, Perez R, Flores F, Ortega J
292 - 296	Ag/Si(111)root 3 x root 3 surface phase transition at low temperature studied by RHEED Nakahara H, Suzuki T, Ichimiya A
297 - 301	The formation of Si(111)5x2-Au single-domain surface phase by a surface diffusion Tsukanov DA, Ryjkov SV, Utas OA, Lifshits VG
302 - 306	Atomic indium nanowires on Si(111): the (4x1)-(8x2) phase transition studied with reflectance anisotropy spectroscopy Fleischer K, Chandola S, Esser N, Richter W, McGilp JF, Schmidt WG, Wang S, Lu W, Bernholc J
307 - 312	Comparison of structural re-organisations observed on pre-patterned vicinal Si(111) and Si(100) surfaces during heat treatment Kraus A, Neddermeyer H, Wulfhekel W, Sander D, Maroutian T, Dulot F, Martinez-Gil A, Hanbucken M
313 - 320	Barrier heights of organic modified Schottky contacts: theory and experiment Kampen T, Bekkali A, Thurzo I, Zahn DRT, Bolognesi A, Ziller T, Di Carlo A, Lugli P
321 - 327	High-resolution photoemission study of the Si(111)/Au interface and its modification by a GaSe van der Waals termination layer Fritsche R, Jaeckel B, Klein A, Jaegermann W
328 - 332	Effects of oxygen plasma treatments on the formation of ohmic contacts to GaN Yan J, Kappers MJ, Barber ZH, Humphreys CJ
333 - 340	Relation between morphology and work function of metals deposited on organic substrates Kampen TU, Das A, Park S, Hoyer W, Zahn DRT
341 - 348	Schottky contacts on passivated GaAs(100) surfaces: barrier height and reactivity Kampen T, Schuller A, Zahn DRT, Biel B, Ortega J, Perez R, Flores F
349 - 354	Theoretical study of the temperature dependence of electrical characteristics of Schottky diodes with an inverse near-surface layer Osvald J, Horvath ZJ
355 - 361	Electrical resistance evolution of Fe thin films during their sulphuration process Pascual A, Ares JR, Ferrer IJ, Sanchez CR
362 - 368	Investigation on the barrier height and phase transformation of nickel silicide Schottky contact Huang SH, Tian Y, Lu F
369 - 373	A transmission electron microscope study of metal/chalcogenide amorphous thin films Romero JS, Fitzgerald AG, Rose M
374 - 386	Optical nanospectroscopy applications in material science Cricenti A, Longo G, Ustione A, Mussi V, Generosi R, Luce M, Rinaldi M, Perfetti P, Vobornik D, Margaritondo G, Sanghera JS, Thielen P, Aggarwal ID, Ivanov B, Miller JK, Haglund R, Tolk NH, Congiu-Castellano A, Rizzo MA, Piston DW, Somma F, Baldacchini G, Bonfigli F, Marolo T, Flora F, Montereali RM, Faenov A, Pikuz T
387 - 394	Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes Hashizume T, Hasegawa H
395 - 402	A molecular device based on light controlled charge carrier mobility Nespurek S, Sworakowski J, Combellas C, Wang G, Weiter M
403 - 408	Surface X-ray diffraction in transmission geometry Tajiri H, Sakata O, Takahashi T
409 - 414	Lattice distortion due to surface treatment of bias sputtering revealed by extremely asymmetric X-ray diffraction Yoshida Y, Akimoto K, Emoto T, Kikuchi S, Itagaki K, Namita H
415 - 421	Features of coherent laser beams interaction with condensed matter Semchuk OY, Bila RV, Willander A, Karlsteen A
422 - 428	Growth and modification of thin SiGeC films at low substrate temperatures through UV laser assisted processing Lopez E, Chiussi S, Serra J, Gonzalez P, Serra C, Kosch U, Leon B, Fabbri F, Fornarini L, Martelli S
429 - 433	A spectroscopic study distinguishing between chemical phase separation with different degrees of crystallinity in Hf(Zr) silicate alloys Lucovsky G, Rayner GB, Kang D, Hinkle CL, Hong JG
434 - 438	Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement Brown MR, Teng KS, Kestle A, Smowton P, Blood P, Mawby PA, Wilks SP
439 - 444	Wet treatment for preparing atomically smooth Si(100) wafer surface Sakaue H, Taniguchi Y, Okamura Y, Shingubara S, Takahagi T
445 - 450	Kinetic roughening during gas-source molecular-beam epitaxy of gallium nitride Vezian S, Natali F, Semond F, Massies J
451 - 456	Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N-2 plasma Petit A, Robert-Goumet C, Bideux L, Gruzza B, Benamara Z, Bouiadjra NB, Matolin V
457 - 461	Photoluminescence characteristics of rare earth-doped nanoporous aluminum oxide de Azevedo WM, de Carvalho DD, de Vasconcelos EA, da Silva EF
462 - 467	Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy Prutskij T, Diaz-Arencibia P, Brito-Orta RA, Mintairov A, Kosel T, Merz J
468 - 474	Influence of the substrate surface termination on the properties of bcc-cobalt films: GaAs(110) versus Sb/GaAs(110) Izquierdo M, Davila ME, Teodorescu CM, Chrost J, Ascolani H, Avila J, Asensio MC
475 - 479	Reductions in interface defects, D-it, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices Bae C, Lucovsky G
480 - 486	Initial stages of MBE growth and formation of CaF2/Si(001) high-temperature interface Sokolov NS, Suturin SM, Ulin VP, Pasquali L, Selvaggi G, Nannarone S
487 - 492	Effect of sintering time on the chemical and electrical features of the grain boundary of the semiconducting SrTiO3 ceramics synthesized from surface-coated powders Park MB, Cho NH
493 - 496	Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer Nohira H, Shiraishi T, Takahashi K, Hattori T, Kashiwagi I, Ohshima C, Ohmi S, Iwai H, Joumori S, Nakajima K, Suzuki M, Kimura K
497 - 502	Growth of subnanometer-thin Si overlayer on TiO2(110)-(1x2) surface Abad J, Rogero C, Mendez J, Lopez MF, Martin-Gago JA, Roman E