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Proceedings of the Seventh International Symposium on atomically controlled surfaces, interfaces and nanostructures - Nara, Japan, November 16-20, 2003 - Preface Oura K |
2 - 12 |
Design of electron correlation effects in interfaces and nanostructures Aoki H |
13 - 20 |
Understanding adsorbate bonding through quantitative surface structure determination Woodruff DP |
21 - 28 |
Structural phase transition and thermal vibration of surface atoms studied by reflection high-energy electron dAiffraction Shigeta Y, Fukaya Y |
29 - 33 |
Precise determination of surface Debye-temperature of Si(111)-7 x 7 surface by reflection high-energy positron diffraction Fukaya Y, Kawasuso A, Hayashi K, Ichimiya A |
34 - 39 |
Kinematical and dynamical analyses of reflection high-energy positron diffraction (RHEPD) patterns from Si(111) 7 x 7 surfaces Hayashi K, Fukaya Y, Kawasuso A, Ichimiya A |
40 - 44 |
Structure of the Si(113) surface studied by surface X-ray diffraction Mizuno Y, Akimoto K, Aoyama T, Suzuki H, Nakahara H, Ichimiya A, Sumitani K, Takahashi T, Zhang XW, Sugiyama H, Kawata H |
45 - 50 |
Comparative analysis of the Si dangling bonds saturation by H or D in gas and liquid phases Chikalova-Luzina O, Matsumoto T |
51 - 57 |
Structural and morphological changes on surfaces with multiple phases studied by low-energy electron microscopy Hibino H, Homma Y, Hu CW, Uwaha M, Ogino T, Tsong IST |
58 - 62 |
Dihydride chain formation on a Si(100)-2 x 1-H surface Fujimori M, Suwa Y, Heike S, Terada Y, Hashizume T |
63 - 67 |
Evolution of surface morphology of Si-trench sidewalls during hydrogen annealing Hiruta R, Kuribayashi H, Shimizu S, Sudoh K, Iwasaki H |
68 - 74 |
Selective formation of Ge nanostructures on Si(111) surface with patterned steps Sumitomo K, Lin F, Homma Y, Ogino T |
75 - 79 |
Adsorption of thiophene on a Si(001)-2 x 1 surface studied by photoelectron spectroscopy and diffraction Shimomura A, Ikejima Y, Yajima K, Yagi T, Goto T, Gunnella R, Abukawa T, Fukuda Y, Kono S |
80 - 85 |
Magic layer thickness in Bi ultrathin films on Si(111) surface Saito M, Ohno T, Miyazaki T |
86 - 92 |
Phonon dynamics of the Sn/Ge(111)-(3 x 3) surface Farias D, Kaminski W, Lobo J, Ortega J, Hulpke E, Perez R, Flores F, Michel EG |
93 - 98 |
The evolution of the Sb/Si interface at room temperature on the Si(111)-(7 x 7) and the Si(100)-(2 x 1) reconstructed surfaces Shivaprasad SM, Paliwal VK, Chaudhuri A |
99 - 104 |
Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction Gruznev D, Ohmura K, Mori M, Tambo T, Lifshits VG, Tatsuyama C |
105 - 109 |
AES and STM investigations of room temperature Mn deposition onto Si(111) at different deposition rates Azatyan S, Hirai A, Kusaka M, Iwami M |
110 - 114 |
Tl overlayers on Si(100) and their self-assembly induced by STM tip Kishida M, Saranin AA, Zotov A, Kotlyar VG, Nishida A, Murata Y, Okado H, Katayama M, Oura K |
115 - 118 |
Hydrogen interaction with Si(111)root 3x root 3-B surfaces Yoshimura M, Watanabe K, Ueda K |
119 - 124 |
Stability and electric conductivity of reconstructions during amorphous Si-metal surface Si deposition Ryjkov SV, Lavrinaitis MV, Tsukanov DA, Lifshits VG |
125 - 133 |
SiO2/Si interface structure and its formation studied by large-scale molecular dynamics simulation Watanabe T, Tatsumura K, Ohdomari I |
134 - 138 |
Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 degrees C Nohira H, Kuroiwa T, Nakamura A, Hirose Y, Hirose Y, Mitsui J, Sakai W, Nakajima K, Suzuki M, Kimura K, Sawano K, Nakagawa K, Shiraki Y, Hattori T |
139 - 145 |
Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures Shin DO, Sardela MR, Ban SH, Lee NE, Shim KH |
146 - 149 |
Strain in beta-FeSi2 modulated by Ge segregation in solid-phase growth of [a-Si/a-FeSiGe], stacked structure Sadoh T, Murakami Y, Kenjo A, Enokida T, Yoshitake T, Itakura M, Miyao M |
150 - 155 |
Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(100) Okada E, Nakatsuka O, Oida S, Sakai A, Zaima S, Yasuda Y |
156 - 160 |
Effect of an Ag buffer layer on a Cu/Ag/Si system Yukawa M, Kitagawa H, Iida S |
161 - 164 |
The effect of electron bombardment on optical properties of n-type silicon Sari AH, Osman F, Ghoranneviss M, Hora H, Hopfl R, Hantehzadeh MR |
165 - 169 |
Energy level broadening of defects causing nonideality in nearly ideal Si Schottky barriers Maeda K |
170 - 175 |
High-resolution photoemission electron spectroscopy study on the oxynitridation of 6H-SiC(0001)-root 3 x root 3R30 degrees surface Labis J, Oh J, Namatame H, Taniguchi M, Hirai M, Kusaka M, Iwami M |
176 - 180 |
Structures of sub-monolayered silicon carbide films Baba Y, Sekiguchi T, Shimoyama I, Nath KG |
181 - 188 |
Atomically engineered interfaces for spin injection: ultrathin epitaxial Fe films grown on As- and Ga-terminated GaAs(001) substrates Herfort J, Braun W, Trampert A, Schonherr HP, Ploog KH |
189 - 193 |
First-principles investigations of GaAs(311)A surface reconstruction -failure of the electron counting model Taguchi A, Shiraishi K |
194 - 199 |
Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4 x 4) surfaces Ito T, Tsutsumida K, Nakamura K, Kangawa Y, Shiraishi K, Taguchi A, Kageshima H |
200 - 205 |
Atomic geometry and theoretical scanning tunneling microscopy images of K chains on InAs(110) Yi H, Lee S, Kim H |
206 - 212 |
Theoretical investigations of adatom behavior on non-planar surfaces with GaAs(n 1 1)A Asano K, Kangawa Y, Ishizaki H, Akiyama T, Nakamura K, Ito T |
213 - 218 |
Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model Kotani J, Hasegawa H, Hashizume T |
219 - 223 |
X-ray diffraction study on GaAs(001)-2 x 4 surfaces under molecular-beam epitaxy conditions Takahasi M, Yoneda Y, Mizuki J |
224 - 229 |
Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(001) Maeda F, Watanabe Y |
230 - 234 |
Surface structure of InGaAs/InP(001) ordered alloy during and after growth Mori T, Hanada T, Morimura T, Shin K, Makino H, Yao T |
235 - 241 |
Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface Kochiya T, Oyama Y, Suto K, Nishizawa J |
242 - 245 |
Atomically-controlled GaSb-termination of GaAs surface and its properties Miura T, Nakai T, Yamaguchi K |
246 - 250 |
Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy Yoshikane T, Urakami A, Koizumi A, Hisadome S, Tabuchi M, Inoue K, Fujiwara Y, Takeda Y |
251 - 255 |
Interfacial bonding distribution and energy band structure of (Gd2O3)(1-x)(SiO2)(x) (x=0.5)/GaAs (001) system Yang JK, Kang MG, Kim WS, Park HH |
256 - 260 |
Investigations on the blue-shift phenomena in argon plasma intermixed InGaAs/InGaAsP quantum well structures Arokiaraj J, Djie HS, Mei T |
261 - 265 |
Interface properties in ZnSe/ZnS based strained superlattices and quantum wells Maia FF, Freire JAK, Freire VN, Farias GA, da Silva EF |
266 - 269 |
Effects of interfacial profiles on quantum levels in InxGa1-xAs/GaAs graded spherical quantum dots Oliveira CLN, Freire JAK, Freire VN, Farias GA |
270 - 273 |
Fermi surface evolution and charge-density waves on In/Cu(001) Hatta S, Okuyama H, Nishijima M, Aruga T |
274 - 278 |
First-principles study on the strain effect of the Cu(001)-c(2 x 2)N self-organized structure Yoshimoto Y, Tsuneyuki S |
279 - 283 |
Optical second harmonic spectroscopy of a Au(100) 5 x 20 reconstructed surface Iwai T, Mizutani G |
284 - 290 |
The growth of Fe, Ni and Co on vicinal Au(111) surfaces Shiraki S, Fujisawa H, Nantoh M, Kawai M |
291 - 295 |
Angle-resolved photoemission study of Co nanostructures on vicinal Au(111) surfaces Fujisawa H, Shiraki S, Nantoh M, Kawai M |
296 - 300 |
Spike structure in the very low energy photoelectron spectra of Ag(001) Hayashi K, Arafune R, Ueda S, Ushioda S |
301 - 305 |
Decay of nano-islands on Au(100) electrode in sulfuric acid solution with Cl- anions Kubo K, Hirai N, Hara S |
306 - 310 |
Alloy formation of Ni ultrathin films on Pt(111) with Ag buffer layers Ho HY, Su CW, Chu YW, Shern CS |
311 - 315 |
Atomic structure of Fe thin-films on Cu(001) studied with stereoscopic photography Hattori AN, Fujikado M, Uchida T, Okamoto S, Fukumoto K, Guo FZ, Matsui F, Nakatani K, Matsushita T, Hattori K, Daimon H |
316 - 320 |
Surface structures of Fe on Mo(110) surface investigated by RHEED Maehara Y, Yamada A, Kawanowa H, Gotoh Y |
321 - 325 |
Etching of polycrystalline copper by oblique injection of argon ion Taguchi T, Yamauchi Y, Hirohata Y, Hino T, Nishikawa M |
326 - 331 |
Nitrogen implantation and heat treatment effect on the hardness improvement of the chromium film surface deposited on Si(111) substrate Ghoranneviss M, Sari AH, Esmaeelpour M, Hantehzadeh MR, Savaloni H |
332 - 335 |
Comparison of experimental and theoretical results of nitrogen implantation in AISI 304 stainless steel Gazestani SHHH, Shahraki MG, Hantehzadeh MR, Ghoranneviss M, Shokouhy A |
336 - 342 |
Atomic-scale properties of low-index ZnO surfaces Diebold U, Koplitz LV, Dulub O |
343 - 347 |
Valence band structure of the ZnO(10(1)over-bar0) surface studied by angle-resolved photoemission spectroscopy Sawada K, Shirotori Y, Ozawa K, Edamoto K, Nakatake M |
348 - 351 |
Control of chemical bonding of the ZnO surface grown by molecular beam epitaxy Ogata K, Komuro T, Hama K, Koike K, Sasa S, Inoue M, Yano M |
352 - 357 |
Room temperature adsorption of NH3 on Zn-terminated ZnO(0001) Hasegawa T, Shirotori Y, Ozawa K, Edamoto K, Takahashi K |
358 - 362 |
Luminescence in Cu-implanted ZnO thin films Sakaguchi I, Hishita S, Haneda H |
363 - 368 |
Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal Yamauchi Y, Yoshitake M, Song WJ |
369 - 373 |
Investigation of formation processes of an anodic porous alumina film on a silicon substrate Shiraki H, Kimura Y, Ishii H, Ono S, Itaya K, Niwano M |
374 - 379 |
Local structural change caused by light irradiation on TiO2(110) surface observed by scanning tunneling microscopy Li YJ, Matsumoto T, Gu N, Komiyama M |
380 - 386 |
Pore structure characterization of large-pore periodic mesoporous organosilicas synthesized with varying SiO2/template ratios Bao XY, Zhao XS, Li X, Li J |
387 - 392 |
Doping of europium in the pores of surface-modified SBA-15 Gu CW, Chia PA, Zhao XS |
393 - 397 |
Efficient adsorption and photocatalytic degradation of organic pollutants diluted in water using fluoride-modified hydrophobic mesoporous silica Yamashita H, Maekawa K, Nakao H, Anpo M |
398 - 404 |
Functionalized nanoporous silicas for the immobilization of penicillin acylase Chong ASM, Zhao XS |
405 - 410 |
Effects of tetraethoxysilane vapor treatment on the cetyltrimethylammonium bromide-templated silica mesoporous low-k thin film with 3D close-packed array of spherical pores Han CK, Jung SB, Park HH |
411 - 415 |
Application of XPS time-dependent measurement to the analysis of charge trapping phenomena in HfAlOx films Hirose K, Yamawaki M, Torii K, Kawahara T, Kawashiri S, Hattori T |
416 - 420 |
Characterization of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy Nakajima K, Joumori S, Suzuki M, Kimura K, Osipowicz T, Tok KL, Zheng JZ, See A, Zhang BC |
421 - 426 |
THz time domain spectroscopy of pulsed laser deposited BaTiO3 thin films Misra M, Kotani K, Kiwa T, Kawayama I, Murakami H, Tonouchi M |
427 - 432 |
Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition Park HH, Park HH, Hill RH |
433 - 438 |
Adsorption structure of benzenethiol on Au(111): first-principles study Nara J, Higai S, Morikawa Y, Ohno T |
439 - 443 |
Adsorption of cata-condensed aromatics on a Si(100)-2 x 1 surface investigated by infrared absorption spectroscopy Okamura K, Hosoi Y, Kimura Y, Ishii H, Niwano M |
444 - 449 |
Molecule orientation in self-assembled monolayers determined by infrared-visible sum-frequency generation spectroscopy Mani AA, Schultz ZD, Champagne B, Humbert C, Dreesen L, Gewirth AA, White JO, Thiry PA, Peremans A, Caudano Y |
450 - 455 |
Comparative study between poly(p-phenylenevinylene) (PPV) and PPV/SiO2 nano-composite for interface with aluminum electrode Yoon S, Choi HJ, Yang JK, Park HH |
456 - 461 |
Influence of wet chemical treatments on the evolution of epoxy polymer layer surface roughness for use as a build-up layer Siau S, Vervaet A, Van Calster A, Swennen I, Schacht E |
462 - 468 |
Self-assembled organic and fullerene monolayers characterisation by two-colour SFG spectroscopy: a pathway to meet doubly resonant SFG process Humbert C, Caudano Y, Dreesen L, Sartenaer Y, Mani AA, Silien C, Lemaire JJ, Thiry PA, Peremans A |
469 - 476 |
Interfacial charge transfer and hole injection in alpha-NPD organic overlayer-CVD diamond substrate system Chun MS, Teraji T, Ito T |
477 - 481 |
Surface composition of K3C60 multilayers and C-60(3-) monolayers investigated by high-resolution electron energy loss spectroscopy Silien C, Thiry PA, Caudano Y |
482 - 487 |
Ab initio study of field emission from hydrogen defects in diamond subsurfaces Araidai M, Watanabe K |
488 - 493 |
Fabrication of nano-sized platinum particles self-assembled on and in CVD diamond films Tsujimoto K, Mitani S, Teraji T, Ito T |
494 - 497 |
Metal induced gap states at alkali halide/metal interface Kiguchi M, Yoshikawa G, Ikeda S, Saiki K |
498 - 502 |
Oxidation process of Mo2C(0001) studied by photoelectron spectroscopy Edamoto K, Sugihara M, Ozawa K, Otani S |
503 - 508 |
In situ observations of tetraamineplatinum(II) hydroxide adsorption from its aqueous solution on heulandite (010) surface by atomic force microscopy Komiyama M, Li YJ, Gu N |
509 - 513 |
Hydration of the HCl and NH3 molecules adsorbed on amorphous water-ice surface Kondo M, Kawanowa H, Gotoh Y, Souda R |
514 - 518 |
Solvation of C2H5OH, CH3CHO, and CH3COCH3 molecules on D2O and CD3OD-ice surfaces Kawanowa H, Kondo M, Shibata T, Gotoh Y, Souda R |
519 - 527 |
Nanowire formation without surface steps Heinz K, Hammer L, Klein A, Schmidt A |
528 - 531 |
Fabrication of Cu nanowires along atomic step edge lines on Si(111) substrates Tokuda N, Watanabe H, Hojo D, Yamasaki S, Miki K, Yamabe K |
532 - 536 |
Scratch induced nano-wires acting as a macro-pattern for formation of well-ordered step structures on H-terminated Si(111) by chemical etching Nagai T, Imanishi A, Nakato Y |
537 - 542 |
Femtosecond dynamic final-state effect in photoemission of surface-passivated metallic nanoparticles on graphite substrates Tanaka A, Takeda Y, Imamura M, Sato S |
543 - 547 |
Ultra-water-repellent surface: fabrication of complicated structure Of SiO2 nanoparticles by electrostatic self-assembled films Soeno T, Inokuchi K, Shiratori S |
548 - 552 |
Differences of Stark shift behavior in Si/SiO2 quantum wells and quantum dots de Sousa JS, Freire JAK, Freire VN, da Silva EF |
553 - 558 |
Conduction band anisotropy effects on the confined electron states of SiC/SiO2 quantum dots de Sousa JS, Freire VN, da Silva EF |
559 - 564 |
Investigation of furan on vicinal Pd(111) by scanning tunneling microscopy Loui A, Chiang S |
565 - 571 |
Elementary processes of vibrationally mediated motions of single adsorbed molecules Ueba H |
572 - 575 |
First-principles calculation of field emission from adsorbed atom on metallic electrode Kobayashi N, Hirose K, Tsukada M |
576 - 580 |
Kondo effect and surface-state electrons Limot L, Berndt R |
581 - 586 |
Nano-scale patterning on sulfur terminated GaAs (001) surface by scanning tunneling microscope Yagishita Y, Toda Y, Hirai M, Fujishiro HI |
587 - 592 |
Local tunneling barrier height imaging of a reconstructed Pt(100) surface Sinsarp A, Yamada Y, Sasaki M, Yamamoto S |
593 - 599 |
Characterization of the electrical and magnetic properties of sub-micron MTJ cells using scanning probe microscope interfaced with an external magnetic field generator Heo J, Kim D, Park S, Kim T, Chung S |
600 - 605 |
Hydrogen and oxygen behaviors on Porous-Si surfaces observed using a scanning ESD ion microscope Itoh Y, Ueda K |
606 - 610 |
Monte Carlo study of secondary electron emission from SiO2 induced by focused gallium ion beams Ohya K, Ishitani T |
611 - 615 |
Surface analyses of Zr (film)/4H-SiC (substrate) by synchrotron radiation induced-PEEM Kamezawa C, Hirai A, Kusaka M, Iwami M, Labis J |
616 - 620 |
Stereoscopic photographs of atomic arrangements in MoS2 single-crystal Guo FZ, Matsui F, Fujikado M, Matsushita T, Daimon H |
621 - 626 |
A new method to characterize dopant profiles in NMOSFETs using conventional transmission electron microscopy Kawamura K, Ikeda K, Terauchi M |
627 - 630 |
AES and XPS studies of a GaP(001) surface treated by S2Cl2 and P2S5/(NH4)(2)S-x Liu KZ, Suzuki Y, Fukuda Y |
631 - 635 |
Characterization of TiN thin films subjected to nanoindentation using focused ion beam milling Ma LW, Cairney JM, Hoffman MJ, Munroe PR |
636 - 640 |
Development of new X-ray microscopy using a low-energy electron beam Ueda K |
641 - 644 |
Recent progress in energy-filtered high energy X-ray photoemission electron microscopy using a Wien filter type energy analyzer Niimi H, Tsutsumi T, Matsudaira H, Kawasaki T, Suzuki S, Chun WJ, Kato M, Kitajima Y, Iwasawa Y, Asakura K |
645 - 648 |
Sample holder assembly covering a wide range of temperatures for surface X-ray diffraction Tajiri H, Sumitani K, Nakatani S, Takahashi T, Akimoto K, Sugiyama H, Zhang X, Kawata H |
649 - 653 |
Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers Yamaguchi H, Miyashita S, Hirayama Y |
654 - 656 |
Phase detection method with positive-feedback control using a quartz resonator based atomic force microscope in a liquid environment Nishi R, Kitano K, Yi I, Sugawara Y, Morita S |