185 - 189 |
Optical properties of ferroelectric (Pb, La) (Zr, Ti) O-3 thin films grown by pulsed laser deposition Zhang WF, Huang YB, Zhang MS |
190 - 196 |
Inhibition of chloride localized corrosion of mild steel by PO43-, CrO42-, and NO2- anions Refaey SAM, Abd El-Rehim SS, Taha F, Saleh MB, Ahmed RA |
197 - 204 |
Profiling of patterned metal layers by laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) Bi M, Ruiz AM, Gornushkin I, Smith BW, Winefordner JD |
205 - 216 |
Density variations in scanned probe oxidation Morimoto K, Perez-Murano F, Dagata JA |
217 - 222 |
Electrical resistivity of vacuum-arc-deposited platinum thin films Avrekh M, Monteiro OR, Brown IG |
223 - 228 |
Effects of Si doping on ordering and domain structures in GaInP Lee SM, Seong TY, Lee RT, Stringfellow GB |
229 - 235 |
Triboelectromagnetic phenomena in a diamond/hydrogenated-carbon-film tribosystem under perfluoropolyether fluid lubrication Nakayama K, Nguyen S |
236 - 245 |
Interface analysis of CVD diamond on TiN surfaces Contreras O, Hirata GA, Avalos-Borja M |
246 - 251 |
Comparison study of physical vapor-deposited and chemical vapor-deposited titanium nitride thin films using X-ray photoelectron spectroscopy Zhao J, Garza EG, Lam K, Jones CM |
252 - 262 |
XPS surface study of nanocrystalline Ti-Ru-Fe materials Sunol JJ, Bonneau ME, Roue L, Guay D, Schulz R |
263 - 267 |
Recombination of neutral oxygen atoms on stainless steel surface Mozetic M, Zalar A |
268 - 274 |
Measurement and analysis of the characteristic parameters for the porous silicon/silicon using photovoltage spectra Wu ST, Wang YH, Shen QH |
275 - 280 |
Study of nitrous oxide plasma oxidation of silicon nitride thin films Bose M, Basa DK, Bose DN |
281 - 286 |
X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga0.62In0.38Sb-SiO2 composite films Liu FM, Zhang LD, Zheng MJ, Li GH |
287 - 291 |
Investigation of oxygen adsorption on Pd (100) with defects Huang WX, Zhai RS, Bao XH |
292 - 300 |
Core-level photoemission study of the Bi-GaAs(111) A interface McGinley C, Cafolla AA, McLoughlin E, Murphy B, Teehan D, Moriarty P, Woolf DA |
301 - 309 |
Dependence of luminescence processes and transmission in vacuum-ultraviolet region on surface condition in CaF2 single crystals Denks V, Savikhina T, Nagirnyi V |
310 - 329 |
Comparison of the oxidation resistances of yttrium implanted low manganese and low manganese-carbon steels at high temperature Caudron E, Buscail H |
330 - 334 |
Luminescence properties of anodically etched porous Zn Chang SS, Yoon SO, Park HJ, Sakai A |
335 - 339 |
XPS and AES investigation of two electroless composite coatings Yu XH, Wang HY, Yang ZR, Yin P, Xin XQ |
340 - 344 |
Variation of bonding structure near the surface of carbon nitride films Jiang LD, Fitzgerald AG, Rose MJ |
345 - 352 |
Comments on the appearance of''mirror'' peaks in mobility spectrum analysis of semiconducting devices Achard J, Varenne-Guillot C, Barbarin F, Dugay M |
353 - 356 |
Spectroscopic study of the surface oxidation of a thin epitaxial Co layer Mamy R |
357 - 361 |
Liquid crystal photoalignment properties of polymethylphenylsilane Yaroshchuk O, Kadashchuk A |
362 - 374 |
Secondary ion emission from polymethacrylate LB-layers under 0.5-11 keV atomic and molecular primary ion bombardment Stapel D, Thiemann M, Benninghoven A |
375 - 377 |
Pulsed laser deposition of epitaxial titanium nitride on MgO(001) monitored by RHEED oscillation Inumaru K, Ohara T, Yamanaka S |