Crystallinity of thin film polycrystalline silicon (poly-Si) grown by atmospheric pressure chemical vapor deposition has been investigated by X-ray diffraction measurement and Raman spectroscopy. Poly-Si films deposited at high temperatures of 850-1050degreesC preferred to <220> direction. By Raman spectroscopy, the broad peak of around 480-500 cm(-1) belonged to microcrystalline Si (muc-Si) phase was observed even for the poly-Si deposited at 950degreesC. After high-temperature annealing (1050degreesC) <331> direction of poly-Si increased. This result indicates that the pc-Si phase at grain boundary became poly-Si phase preferred to <331> direction by high-temperature annealing. Effective diffusion length of poly-Si films deposited at 1000degreesC was estimated to be 11.9-13.5 mum and 10.2-12.9 mum before and after annealing, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.