The development of single-crystalline silicon (Si) on a glass substrate is an important challenge for its application to a system on glass and highly effective solar cell. This paper proposes an approach to form selective single-crystalline Si on non-alkaline glass using self-aligned heat reservoirs and continuous-wave green-laser lateral crystallization. Single-crystalline Si is selectively formed in a predetermined region on a nonalkaline glass substrate with dimensions of 7 x 10 mu m(2). (c) 2008 Elsevier B.V. All rights reserved.