Chemical vapor deposition of hafnium dioxide thin films from cyclopentadienyl hafnium compounds

Carta G; El Harbra N; Rossetto G; Crociani L; Torzo G; Zanella P; Casarin M; Cavinato G; Pace G; Kaciulis S; Mezzi A

Thin Solid Films, Vol.516, No.21, 7354-7360, 2008

DOI10.1016/j.tsf.2008.02.017 Export Citation

Chemical vapor deposition of hafnium dioxide thin films from cyclopentadienyl hafnium compounds

Carta G, El Harbra N, Rossetto G, Crociani L, Torzo G, Zanella P, Casarin M, Cavinato G, Pace G, Kaciulis S, Mezzi A

Thin films of HfO2 were grown by metal-organic chemical vapour deposition on fused quartz substrates in the temperature range of 400-500 degrees C using some bis(cyclopentadienyl)bis(alkoxide)hafnium (IV) precursors, namely Cp2Hf(O'Pr)(2), [Cp2Hf{OCH(CH3)CH2CH3}(2)], [Cp2Hf{OC (CH3)CH2OCH3}(2)] and [Cp2H{OC(CH2CH3)(2)CH2OCH3}(2)]. These complexes, analyzed by nuclear magnetic resonance and thermogravimetric measurements, resulted pure and very stable towards air and moisture. The obtained films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy and atomic force microscopy. The deposits contained hafnium and oxygen in the right stoichiometric ratio with a low carbon contamination and they consisted of monoclinic HfO2 phase (baddeleyite) with a granular surface morphology. (c) 2008 Published by Elsevier B.V.

Keywords:cyclopentadienyl precursors;HfO2 coatings;MOCVD;polycrystalline films;monoclinic HfO2