Wide band gap InGaZn6O9 films of thickness similar to 350 nm were deposited on sapphire (0001) at room temperature by using the pulsed laser deposition technique. The transparent films showed the optical transmission of >80% with the room temperature Hall mobility of similar to 10 cm(2)/V s and conductivity of 4 x 10(2) S/cm at a carrier density >10(20) cm(-3). The electrical properties as a function of deposition temperatures revealed that the conductivity and mobility almost retained up to the deposition temperature of 200 degrees C. The films annealed in different atmospheres suggested oxygen vacancy plays an important role in determining the electrical conductivity of the compound. Room temperature grown heterostructure of n-InGaZn6O9/p-SiC showed a good rectifying behavior with a leakage current density of less than 10(-9) A/cm(2), current rectifying ratio of 10(5) with a forward turn on voltage similar to 3 V, and a breakdown voltage greater than 32 V. (C) 2008 Elsevier B.V. All rights reserved.