다이아몬드 박막기술

이지화

Journal of the Korean Industrial and Engineering Chemistry, Vol.1, No.1, 11-22, October, 1990

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다이아몬드 박막기술

Diamond Thin Film Technology

이지화

초록

다이아몬드가 준안정상태로 존재하는 조건(저압 및 저온) 하에서 화학증착시키는 방법이 80년대에 개발되어 새로운 다이아몬드 코팅기술로 등장하고 있다. 여기서는 여러가지 CVD방법을 장단점과 함께 소개하였다. 다이아몬드 박막의 성장에 관련된 반응기구와 수소원자의 역할을 논하였으며, 또 장래의 연구분야와 응용을 전망하였다.

Chemical vapor deposition of diamond under metastable conditions(low pressure and temperature) developed in the eighties is now an emerging technology for diamond coatings. In this article, various CVD methods are described with their advantages and limitations. The reaction mechanisms and the possible role of H atoms involved in the diamond film growth process are briefly reviewed. Also mentioned are the future research area and the prospect of applications.

[References]

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Ono A, Baba T, Funamoto H, Nishikawa A, Jpn. J. Appl. Phys., 25, L808 (1986)
Prins JF, Appl. Phys. Lett., 41, 950 (1982)
Geis MW, Ratthman DD, Ehrlich DJ, Murphy RA, Lindley WT, IEEE Trans. Electron Devices, 8, 341 (1987)
Gildenblat GS, Grot SA, Wronski CR, Vadzian AR, Badzian T, Messier R, Appl. Phys. Lett., 53, 586 (1988)
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Deryahin BV, Fedoseev DV, Bull. Academy Sci. USSR., Div. Chem. Sci., 1106 (1979)
Eversole WG, U.S. Patent, 3030 188, Apr. 17 (1962)
Angus JC, Will HA, Stanko WS, J. Appl. Phys., 39, 2915 (1968)
Chayhan SP, Angus JC, Gardner NC, J. Appl. Phys., 47, 4746 (1976)
Deryagin BV, Fedoseev DB, Sci. Qm., 233, 10 (1975)
Matsumoto S, Sato Y, Tsutsumi M, Setaka N, J. Mater. Sci., 17, 3106 (1982)
Kamo M, Sato Y, Matsumoto S, Setaka N, J. Cryst. Growth, 62, 642 (1983)
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Wada N, Solin A, Physica B, 105, 353 (1981)
Inoue T, Tachivana H, Kumagai K, Miyata K, Nishimura K, Kobashi K, Nakaue A, J. Appl. Phys., 67, 7329 (1990)
Harris SJ, Appl. Phys., 67, 7329 (1990)
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Kawarada H, Yokota Y, Mori Y, Tomiyana A, Ma JS, Wei J, Suzujki J, Hiraki A, Vacuum, 41, 885 (1990)
Spitsyn BV, Bouilov LL, Deryaguin BV, J. Cryst. Growth, 52, 219 (1981)
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Pate BB, Surf. Sci., 165, 83 (1986)
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Suagi H, Kojima H, Ishida A, Toyoda H, Appl. Phys. Lett., 53, 1605 (1988)
Harris SJ, J. Appl. Phys., 65, 3044 (1989)
Sugai H, Kojima H, Toyoda H, Appl. Phys. Lett., 56, 2616 (1990)
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Frenklach M, Spear KE, J. Mater. Rev., 3, 136 (1988)
Huang D, Frenklach M, Maroncelli M, J. Phys. Chem., 92, 6379 (1988)

[1] Field JE, "Properties of Diamond," p. 642, Academic Press, New York (1979)

[2] Bachmann PK, Messier R, Chem. Eng. News, 15, 24 (1989)

[3] Berman R, "Properties of Diamond," ed. by J.E. Field, Academic Press, New York (1979)

[4] Ono A, Baba T, Funamoto H, Nishikawa A, Jpn. J. Appl. Phys., 25, L808 (1986)

[5] Prins JF, Appl. Phys. Lett., 41, 950 (1982)

[6] Geis MW, Ratthman DD, Ehrlich DJ, Murphy RA, Lindley WT, IEEE Trans. Electron Devices, 8, 341 (1987)

[7] Gildenblat GS, Grot SA, Wronski CR, Vadzian AR, Badzian T, Messier R, Appl. Phys. Lett., 53, 586 (1988)

[8] Cotton FA, Wikinson G, "Advanced Inorganic Chemistry," p. 356, John Wiley & Sons, New York (1980)

[9] vonBolton W, Electrochem., 17, 971 (1911)

[10] Ruff O, Anorg. Allg. Chem., 99, 145 (1917)

[11] Tammann G, Anorg. Allg. Chem., 115, 145 (1921)

[12] Meller DP, J. Chem. Phys., 15, 525 (1947)

[13] Deryagin BV, Spitsyn BV, Builov LL, Klochkov AA, Gorodetskii AE, Smilyanimov AV, Sov. Phys. Dokl., 21, 676 (1976)

[14] Deryagin BV, Fedoseev DV, "Growth for Diamond and Graphite form Gas Phase," Nauka, Moscow (1977)

[15] Deryahin BV, Fedoseev DV, Bull. Academy Sci. USSR., Div. Chem. Sci., 1106 (1979)

[16] Eversole WG, U.S. Patent, 3030 188, Apr. 17 (1962)

[17] Angus JC, Will HA, Stanko WS, J. Appl. Phys., 39, 2915 (1968)

[18] Chayhan SP, Angus JC, Gardner NC, J. Appl. Phys., 47, 4746 (1976)

[19] Deryagin BV, Fedoseev DB, Sci. Qm., 233, 10 (1975)

[20] Matsumoto S, Sato Y, Tsutsumi M, Setaka N, J. Mater. Sci., 17, 3106 (1982)

[21] Kamo M, Sato Y, Matsumoto S, Setaka N, J. Cryst. Growth, 62, 642 (1983)

[22] Saito Y, Matsuda S, Nogita S, J. Mater. Sci. Lett., 5, 565 (1986)

[23] Sato Y, Kamo M, Setaka N, Proceedings of 8th International Symposium on Plasma Chemistry, p. 2446, Tokyo (1987)

[24] Sawabe A, Inuzuka T, Thin Solid Films, 137, 89 (1986)

[25] Kitahama K, Hirata K, Nakamatsu H, Kawai S, Hujimori N, Imai T, Yoshino H, Doi A, Appl. Phys. Lett., 49, 634 (1986)

[26] Tzeng Y, Cutshaw C, Phillips R, Srivinyunon T, Ibrahim A, Loo BH, Appl. Phys. Lett., 56, 134 (1990)

[27] Kurihara K, Sasaki K, Kawarada M, Noshono N, Jpn. J. Appl. Phys., 52, 437 (1988)

[28] Wada N, Solin A, Physica B, 105, 353 (1981)

[29] Inoue T, Tachivana H, Kumagai K, Miyata K, Nishimura K, Kobashi K, Nakaue A, J. Appl. Phys., 67, 7329 (1990)

[30] Harris SJ, Appl. Phys., 67, 7329 (1990)

[31] Watanave I, Sugata K, Jpn. J. Appl. Phys., 27, 1397 (1990)

[32] Kawarada H, Yokota Y, Mori Y, Tomiyana A, Ma JS, Wei J, Suzujki J, Hiraki A, Vacuum, 41, 885 (1990)

[33] Spitsyn BV, Bouilov LL, Deryaguin BV, J. Cryst. Growth, 52, 219 (1981)

[34] Seo MK, Ph.D. Thesis, Seoul National University (1990)

[35] Kawato T, Kondo K, Jpn. J. Appl. Phys., 26, 1429 (1987)

[36] Kobashi K, Nishimura K, Miyata K, Kawate Y, Glass J, Williams B, Phys. Rev., B, Condens. Matter, 23, 531 (1988)

[37] Badsian AR, Badzian T, Roy R, Messier R, Spear KE, Mater. Res. Bull., 23, 531 (1988)

[38] Haubner R, Lux B, Int. J. Refract. Hard. Mat., 6 (1987)

[39] Vadzian AR, DeVeries RC, Mater. Res. Bull., 23, 385 (1988)

[40] Pate BB, Surf. Sci., 165, 83 (1986)

[41] Lander JJ, Morrison J, Surf. Sci., 4, 241 (1966)

[42] Suagi H, Kojima H, Ishida A, Toyoda H, Appl. Phys. Lett., 53, 1605 (1988)

[43] Harris SJ, J. Appl. Phys., 65, 3044 (1989)

[44] Sugai H, Kojima H, Toyoda H, Appl. Phys. Lett., 56, 2616 (1990)

[45] Mitsuda Y, Tanaka K, Yoshida T, J. Appl. Phys., 67, 3604 (1990)

[46] Tsuda M, Nakajima M, Oikawa S, J. Am. Chem. Soc., 108, 5780 (1986)

[47] Frenklach M, Spear KE, J. Mater. Rev., 3, 136 (1988)

[48] Huang D, Frenklach M, Maroncelli M, J. Phys. Chem., 92, 6379 (1988)