High-temperature growth and characterization of (Er,Yb):YAI(3)(BO3)(4) and NdAl3(BO3)(4) epitaxial layers

Volkova E; Maltsev V; Kolganova O; Leonyuk NI

Journal of Crystal Growth, Vol.401, 547-549, 2014

DOI10.1016/j.jcrysgro.2013.01.035 Export Citation

High-temperature growth and characterization of (Er,Yb):YAI(3)(BO3)(4) and NdAl3(BO3)(4) epitaxial layers

Volkova E, Maltsev V, Kolganova O, Leonyuk NI

Er0.04Y0.96,Al-3(BO3)(4), Er0.015Yb0.11Y0.575Al3(BO3)(4) and NdAl3(BO3)(4) epitaxial layers were grown from K2Mo3010-based fluxed melts by an LPE method. SGDS grown YAI(3)(BO3)(4) and NdAl3(BO3)(4) single crystals were used as substrates. Growth kinetics, homogeneity and micromorphology of (Er,Yb):YAI(3)(BO3)(4) (Er,Yb): YAI(3)(BO3)(4) and NdAl3(BO3)(4) thin films were investigated. (C) 2014 Elsevier B.V. All rights reserved.

Keywords:Growth front high temperature solutions;Liquid phase epitaxy;Borates