Damage created by implantation of Al(+) ions into 4H-SiC is characterized using Backscattering Spectrometry in combination with channeling. The measurability of the damage profile in the carbon sublattice was demonstrated using the 4260 keV (12)C(alpha,alpha)(12)C resonance. To create disorder, Al(+) ions with energy of 200 keV and 350 keV were implanted at room temperature. As an independent method, cross-sectional transmission electron microscopy was used to study the damage structure in irradiated 4H-SiC.