화학공학소재연구정보센터
Materials Science Forum, Vol.384-3, 221-225, 2002
Influence of uniaxial stress on the polarization of spontaneous emission from p-Ge
The intensity of polarized spontaneous emission as a function of uniaxial stress in p-Ge is studied. It is found that with rising of stress dependence of the radiation polarization rotates by pi/2. The effect is explained by the modification of the energy spectrum of free and impurity states under the uniaxial compression.