Material and electrical properties of titanium-based ohmic contacts on p-type 4H-SiC were investigated depending on the post-annealing and the metal covering conditions. Best results are obtained as 4 x 10(-4) ohm.cm(2) for Co/Si/Ti metal structures after a vacuum annealing at 850degrees C for 60 sec. The contact resistance was measured by a transmission line technique, and the contact resistances were improved more than one order compared to Ti and Co/Ti contacts for the annealed samples at the same conditions. The Co layer is supposed to reduce the oxidation of Ti films, and the Si layer plays a role of diffusion barrier to the intermixing of Ti and Co atoms, which was considered as a major cause for the large contact resistance.