Computational modeling is a powerful tool for development of new SiC CVD epitaxial growth processes. Growth dependencies that can be reliably predicted using simulation were investigated by correlating simulation results with results of epitaxial growth. It was shown that for the mass transfer-controlled growth typical for SiC epitaxy, the growth rate can be predicted with a sufficient precision even if elaborate models of the surface reactions are not available. Depletion of the precursors in the gas phase along the growth direction was shown to be one of the most important sources for the growth rate non-homogeneity. The effective Si/C ratio determined by simulation can help in predicting doping non-homogeneity. Simulation of the degree of precursor supersaturation above the growth surface can be used as a good estimate of the morphology degradation, which can help in specifying the window for the optimal growth parameters during new process development.