Fabrication technique of SiC epitaxial films is studied using pulsed laser ablation-deposition (PLD) method. Hetero-epitaxial films of alpha-SiC have been successfully prepared on Si(I 11) substrates at similar to1300 degreesC as well as sapphire (0001) plane. I-V characteristic of the SiC/p-Si junctions is studied in addition to the crystallographic properties of the films. A non-linear I-V characteristic with a breakdown voltage of 100-300 V is observed for the SiC/p-Si junctions with epitaxial SiC lattices, which is ascribed to p-n junction. Polycrystalline films give poor I-V characteristic.