마그네트론 코스퍼터링법으로 형성한 SiO2/Si 양자점 초격자 구조의 특성

박영빈; 김신호; 하린; 이현주; 이정철; 배종성; 김양도; Youngbin Park; Shinho Kim; Rin Ha; Hyun Ju Lee; Jung chul Lee; Jong-seong Bae; Yangdo Kim

Korean Journal of Materials Research, Vol.20, No.11, 586-591, November, 2010

DOI10.3740/MRSK.2010.20.11.586 Export Citation

마그네트론 코스퍼터링법으로 형성한 SiO2/Si 양자점 초격자 구조의 특성

Characteristics of SiO2/Si Quantum Dots Super Lattice Structure Prepared by Magnetron Co-Sputtering Method

박영빈, 김신호, 하린, 이현주, 이정철¹, 배종성², 김양도 ^†

부산대학교 재료공학부
¹한국에너지기술 연구원 태양광 연구단
²한국 기초 과학 연구원 부산센터

Youngbin Park, Shinho Kim, Rin Ha, Hyun Ju Lee, Jung chul Lee¹, Jong-seong Bae², and Yangdo Kim^†

School of Materials Science and Engineering, Pusan National University, Busan, Korea
¹Solar Cells Research Center, Korea Institute of Energy Research, Daejeon, Korea
²Busan center, Korea Science Institute, Busan, Korea

E-mail:

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the 1st and 2nd generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an SiOx matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; SiOx (x = 0.8, 1.12)) and SiO2 layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and 1,100oC under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at 1,100oC for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/SiO2 SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at 1,100oC for two hours. The systematic investigation of precipitation behavior of Si QDs in SiO2 matrices is presented.

Keywords:Si quantum dots;silicon oxide;superlattice;solar cells

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[Related Articles]

[1] Green MA, Sol. Energy, 74(3), 181 (2003)

[2] Mitchell RL, Eitt CE, King R, Ruby D, in Proceedings of the 29th IEEE Photovoltaic Specialists Conference, (New Orleans, Louisiana, May 2002) p.1444. (2002)

[3] Conibeera G, Green M, Corkish R, Cho Y, Cho EC, Jiang CW, Fangsuwannarak T, Pink E, Huang Y, Puzzer T, Trupke T, Richards B, Shalav A, Lin KL, Thin Solid Films, 511-512, 654 (2006)

[4] Green MA, Third Generation Photovoltaics: Advanced Solar Energy Conversion, p.33-67, Springer, Berlin, Germany (2003). (2003)

[5] Nelson J, The Physics of Solar Cells, p.289, Imperial College Press, London, UK (2003). (2003)

[6] Pavesi L, Negro LD, Mazzoleni C, Franzo G, Priolo F, Nature, 408, 440 (2000)

[7] Lu ZH, Lockwood DJ, Baribeau JM, Nature, 378, 359 (1995)

[8] Tsybeskov L, Hirschman KD, Duttagupta SP, Zacharias M, Fauchet PM, McCaffrey JP, Lockwood DJ, Appl. Phys. Lett., 72, 43 (1998)

[9] Grom GF, Lockwood DJ, McCaffrey JP, Labbe HJ, Fauchet PM, White B, Diener J, Kovalev D, Koch F, Tsybeskov L, Nature, 407, 358 (2000)

[10] Conibeer G, Green M, Cho EC, Konig D, Cho YH, Fangsuwannarak T, Scardera G, Pink E, Huang YD, Puzzer T, Huang SJ, Song DY, Flynn C, Park S, Hao XJ, Mansfield D, Thin Solid Films, 516(20), 6748 (2008)

[11] Zacharias M, heitmann J, Scholz R, Kahler U, Schmidt M, Blasing J, Appl. Phys. Lett., 80, 661 (2002)

[12] Lee YR, Alam MM, Kim JY, Jung WG, Kim SD, Korean J. Mater. Res., 20(10), 550 (2010)

[13] Lisovkii IP, Litovchenko VG, Lozinskii VB, Frolov SI, Fleitner H, Fussel W, Schmidt EG, J. Non-Cryst. Solids, 187, 91 (1995)

[14] Lisovkii IP, Litovchenko VG, Lozinskii VB, Steblovskii GI, Thin Solid Films, 213, 164 (1992)

[15] Pai PG, Chao SS, Takagi Y, Lucovsky G, J. Vac. Sci. Technol. A, 4, 689 (1986)

[16] Schmidt JU, Schmidt B, Mater. Sci. Eng. B, 101, 28 (2003)

[17] Lehmann A, Schumann L, Hubner K, Phys. Status Solidi B, 117, 689 (1983)

[18] Bell FG, Ley L, Phys. Rev. B, 37, 8383 (1988)

[19] Lehmann A, Schumann L, Hubner K, Phys. Status Solidi B, 121, 505 (1984)

[20] Zacharias M, Heitmann J, Yi L, Scholz R, Reiche M, Cosele U, in Proceedings of SPIE (Seattle, WA, July 2002), Vol. 4808, p.28.

[21] Rochet F, Dufour G, Roulet H, Pelloie B, Perriere J, Fogarassy E, Slaoui A, Froment M, Phys. Rev. B, 37, 6468 (1988)

[22] Cho E, Park S, Hao X, Song D, Conibeer G, Park S, Green MA, Nanotechnology, 19, 245201 (2008)

[23] Hollinger G, Himpsel FJ, Appl. Phys. Lett., 44, 93 (1984)