금속 유도 일측면 선결정화에 의해 제작된 다채널 다결정 실리콘 박막 트랜지스터 소자 및 회로의 전기적 특성 평가

황욱중; 강일석; 임성규; 김병일; 양준모; 안치원; 홍순구; Wook-Jung Hwang; Il-Suk Kang; Sung-Kyu Lim; Byeong-Il Kim; Jun-Mo Yang; Chi-Won Ahn; Soon-Ku Hong

Korean Journal of Materials Research, Vol.18, No.9, 507-510, September, 2008

DOI10.3740/MRSK.2008.18.9.507 Export Citation

금속 유도 일측면 선결정화에 의해 제작된 다채널 다결정 실리콘 박막 트랜지스터 소자 및 회로의 전기적 특성 평가

Dynamic Characteristics of Multi-Channel Metal-Induced Unilaterally Precrystallized Polycrystalline Silicon Thin-Film Transistor Devices and Circuits

황욱중^{1, 2}, 강일석^{1, †}, 임성규², 김병일², 양준모^{1, 2}, 안치원^{1, 2}, 홍순구³

¹나노종합팹센터 정보전자부품소재기술혁신센터
²나노종합팹센터
³충남대학교 재료공학과

Wook-Jung Hwang^{1, 2}, Il-Suk Kang^{1, †}, Sung-Kyu Lim², Byeong-Il Kim², Jun-Mo Yang^{1, 2}, Chi-Won Ahn^{1, 2}, and Soon-Ku Hong³

¹Advanced Technology Center for Information Electronic Materials and Components, National Nanofab Center, Daejoen 305-806, Korea
²National Nanofab Center, Daejoen 305-806, Korea
³Department of Materials Science and Engineering, Chungnam National University, Daejoen 305-764, Korea

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Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

Keywords:metal-induced unilateral precrystallization;polycrystalline silicon thin-film transistor;multi-channel;ring oscillator

[References]

Iverson RB, Reif R, J. Appl. Phys., 62, 1675 (1987)
Kim KH, Park SJ, Cho KS, Sohn WS, Jang J, SID Tech. Dig., 150 (2002)
Meng Z, Wang M, Wong M, IEEE Trans. Electron Devices, 47, 404 (2000)
Kang IS, Han SH, Joo SK, Appl. Phys. Lett., 91, 092112 (2007)
Kim MS, Lee JS, Kim YS, Joo SK, Electrochem. Solid State Lett., 9(2), G56 (2006)
Kim MS, Song NK, Han SH, Joo SK, Appl. Phys. Lett., 89, 223503 (2006)
Docking S, Sachdev M, IEEE J. Solid-State Circuits, 39, 533 (2004)

[Referenced By]

[1] Iverson RB, Reif R, J. Appl. Phys., 62, 1675 (1987)

[2] Kim KH, Park SJ, Cho KS, Sohn WS, Jang J, SID Tech. Dig., 150 (2002)

[3] Meng Z, Wang M, Wong M, IEEE Trans. Electron Devices, 47, 404 (2000)

[4] Kang IS, Han SH, Joo SK, Appl. Phys. Lett., 91, 092112 (2007)

[5] Kim MS, Lee JS, Kim YS, Joo SK, Electrochem. Solid State Lett., 9(2), G56 (2006)

[6] Kim MS, Song NK, Han SH, Joo SK, Appl. Phys. Lett., 89, 223503 (2006)

[7] Docking S, Sachdev M, IEEE J. Solid-State Circuits, 39, 533 (2004)