Korean Journal of Materials Research, Vol.18, No.2, 103-106, February, 2008
단결정 반금속 비스무스 단일 나노선의 Shubnikov-de Haas 진동
Shubnikov-de Haas Oscillations in an Individual Single-Crystalline Semimetal Bismuth Nanowire
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The magneto-transport properties of an individual single crystalline Bi nanowire grown by a
spontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameter nanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that had formed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negative longitudinal ordinary magnetoresistance (.38%) were measured at 2 K. It was observed that the period of Shubnikov-de Haas oscillations in transverse geometry was 0.074 T.1, 0.16 T.1 and 0.77 T.1, which is in good agreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinal geometry is 0.24 T.1, which is larger than the value of 0.16 T.1 reported for bulk Bi. The deviation is attributable to the spatial confinement arising from scattering at the nanowire surface boundary.
Keywords:single-crystalline Bi nanowire;magnetoresistance (MR);shubnikov-de haas oscillations (SdH);spatial confinement effect;landau energy level
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