화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.16, No.7, 455-460, July, 2006
Gd2O2S:Tb의 동시 계수 도플러 양전자 소멸법에 의한 결함 특성
Defect Analysis of Gd2O2S : Tb Using Coincidence Doppler Broadening Positron Annihilation Spectroscopy
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Coincidence Doppler Broadening (CDB) of positron annihilation spectroscopy was applied to analyze defects in the chemical state of Department of Physics, :Tb intensifying screens. The screen samples were irradiated by 80 MV X-rays in hospital and were used for 0, 2, 4, and 6 years respectively. There was a positive relationship between the S-parameter values and time of exposure to X-rays. Most of the defects were indicated to have been generated by X-rays. A 1D CDB was developed in order to reduce the background noise, and the S-parameter values of the :Tb intensifying screens, using the 1D CDB, varied between 0.4974 and 0.4991.
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