FeRAM 소자 제작 중에 발생하는 Pt/Al 반응 기구

조경원; 홍태환; 권순용; 최시경; Kyoung-Won Cho; Tae-Whan Hong; Soon-Yong Kweon; Si-Kyong Choi

Korean Journal of Materials Research, Vol.14, No.10, 688-695, October, 2004

DOI10.3740/MRSK.2004.14.10.688 Export Citation

FeRAM 소자 제작 중에 발생하는 Pt/Al 반응 기구

Pt/Al Reaction Mechanism in the FeRAM Device Integration

조경원, 홍태환, 권순용^†, 최시경¹

충주대학교 신소재공학과/나노기술연구소
¹한국과학기술원 신소재공학과

Kyoung-Won Cho, Tae-Whan Hong, Soon-Yong Kweon^†, and Si-Kyong Choi¹

Department of Materials Science and Engineering/Nano Technology Lab., Chungju National University, Chungju, Chungbuk 380-702, Korea
¹Department of Materials Science and Engineering, Korea Advanced Institute of Sceince and Technology, Dajeon, 305-701, Korea

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The capacitor contact barrier(CCB) layers have been introduced in the FeRAM integration to prevent the Pt/Al reaction during the back-end processes. Therefore, the interdiffusion and intermetallic formation in Pt(1500\AA)/Al(3000\AA) film stacks were investigated over the annealing temperature range of 100∼500 ? C . The interdiffusion in Pt/Al interface started at 300 ? C and the stack was completlely intermixed after annealing over 400 ? C in nitrogen ambient for 1 hour. Both XRD and SBM analyses revealed that the Pt/Al interdiffusion formed a single phase of RtAl 2 intermetallic compound. On the other hand, in the presence of TiN( 1000\AA ) barrier layer at the Pt/Al interface, the intermetallic formation was completely suppressed even after the annealing at 500 ? C . These were in good agreement with the predicted effect of the TiN diffusion barrier layer. But the conventional TiN CCB layer could not perfectly block the Pt/Al reaction during the back-end processes of the FeRAM integration with the maximum annealing temperature of 420 ? C . The difference in the TiN barrier properties could be explained by the voids generated on the Pt electrode surface during the integration. The voids were acted as the starting point of the Pt/Al reaction in real FeRAM structure.

Keywords:FeRAM;Pt/Al interface

[References]

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[2] Yang B, Kang YM, Lee SS, Noh KH, Lee SW, Kim NK, Kweon SY, Yeom SJ, Park YJ, IEEE Electron Device Lett., 23, 743 (2002)

[3] Oh SH, Hong SK, Noh KH, Kweon SY, Kim NK, Yang YH, Kim JG, Seong JY, Jang IW, Park SH, Bang KH, Lee KN, Jung HJ, Son JH, Lee SS, Choi ES, Sun HJ, Yeom SJ, Ban KD, Park JW, Park GD, Song SY, Shin JH, Lee SI, Park YJ, IEEE International Electron Device Meeting 2003 (IEDM 2003), December 8-10, (2003) Washington, D. C., USA (2003)

[4] Jung WW, Choi SK, Kweon SY, Yeom SJ, Appl. Phys. Lett., 83, 2160 (2003)

[5] Sun HJ, Choi ES, Lee TK, Hong TE, Yang JM, Kweon SY, Kim NK, Yeom SJ, Roh JS, Sohn HC, Kim JW, Jpn. J. Appl. Phys. Part 1, 43, 2651 (2004)

[6] Chang CA, J. Appl. Physics, 52, 4620 (1987)

[7] Chang CA, J. Appl. Physics, 61, 1864 (1987)

[8] Colgan EG, J. Appl. Physics, 62, 1224 (1987)

[9] Kweon SY, Yeom SJ, Lee SK, Yu YS, Pyun DS, Kim CT, Integrated Ferroelectrics, 31, 251 (2000)

[10] Gas P, Labar J, Clugnet G, Kovacs A, Bergman C, Barna P, J. Appl. Physics, 90, 3899 (2001)

[11] Labor J, Gas P, J. Appl. Physics, 90, 6545 (2001)

[12] Kweon SY, Yeom SJ, Sun HJ, Kim NK, Yu YS, Lee SK, Integrated Ferroelectrics, 25, 299 (1999)

[13] Yang WS, Yeom SJ, Kim NK, Kweon SY, Roh JS, Jpn. J. Appl. Phys. Part 1, 39, 5465 (2000)