화학공학소재연구정보센터
Korean Journal of Materials Research, Vol.12, No.4, 240-247, April, 2002
실리콘을 첨가한 주석 산화물 박막의 전기 화학적 특성
Electrochemical Characteristics of Silicon-Doped Tin Oxide Thin Films
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Tin oxide thin films doped with silicon as anodes for lithium secondary battery were fabricated by R.F. magnetron sputtering technique. The electrochemical results showed that the irreversible capacity was reduced during the first discharge/charge cycle, because the audition of silicon decreased the oxidic state of Tin. Capacity was increased with the increase of substrate temperature, however decreased with the increase of RTA temperatures. The reversible capacity of thin films fabricated under the substrate temperature of 300 ? C and the Ar: O 2 ratio of 7:3 was 700mA/g.
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