The effects of electron beam interaction with Ge4As4Se92 amorphous film surface have been studied. The dependence of the surface relief shape on the irradiation dose has been analyzed. We find a threshold irradiation dose at which the surface relief shape inversion occurs, i.e. expansion at low irradiation doses and contraction at high doses. Possible mechanisms behind observed phenomena have been discussed. The application of these materials in a direct structure fabrication by electron lithography and single-stage information recording has been demonstrated. (C) 2014 Elsevier B.V. All rights reserved.