스핀코팅법으로 제작한 산화구리 박막의 일산화질소 가스 감지 특성

황현정; 김효진; 김도진; Hyeonjeong Hwang; Hyojin Kim; Dojin Kim

Korean Journal of Materials Research, Vol.25, No.4, 171-176, April, 2015

DOI10.3740/MRSK.2015.25.4.171 Export Citation

스핀코팅법으로 제작한 산화구리 박막의 일산화질소 가스 감지 특성

Nitrogen Monoxide Gas Sensing Properties of Copper Oxide Thin Films Fabricated by a Spin Coating Method

황현정¹, 김효진 ^{1, 2, †}, 김도진 ^{1, 2}

¹충남대학교 차세대기판학과
²충남대학교 공과대학 재료공학과

Hyeonjeong Hwang¹, Hyojin Kim^{1, 2, †}, and Dojin Kim^{1, 2}

¹Graduate School of Advanced Circuit Substrate Engineering, Chungnam National University, Daejeon 305-764, Korea
²Department of Materials Science and Engineering, Chungnam National University, Deajeon 305-764, Korea

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We present the detection characteristics of nitrogen monoxide(NO) gas using p-type copper oxide(CuO) thin film gas sensors. The CuO thin films were fabricated on glass substrates by a sol-gel spin coating method using copper acetate hydrate and diethanolamine as precursors. Structural characterizations revealed that we prepared the pure CuO thin films having a monoclinic crystalline structure without any obvious formation of secondary phase. It was found from the NO gas sensing measurements that the p-type CuO thin film gas sensors exhibited a maximum sensitivity to NO gas in dry air at an operating temperature as low as 100 oC. Additionally, these CuO thin film gas sensors were found to show reversible and reliable electrical response to NO gas in a range of operating temperatures from 60 oC to 200 oC. It is supposed from these results that the ptype oxide semiconductor CuO thin film could have significant potential for use in future gas sensors and other oxide electronics applications using oxide p-n heterojunction structures.

Keywords:oxide semiconductor;gas sensor;CuO;NO gas;spin coating

[References]

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Seiyama T, Kato A, Fujishi K, Nagatani M, Anal. Chem., 34, 1502 (1962)
Fine GF, Cavanagh LM, Afonja A, Bibions R, Sensors, 10, 5469 (2010)
Sauter D, Weimar U, Noetzel G, Mitrovics J, Gopel W, Sens. Actuators B-Chem., 69, 1 (2000)
Min Y, Tuller HL, Palzer S, Wollenstein J, Bottner H, Sens. Actuators B-Chem., 93, 435 (2003)
Gao T, Wang TH, Appl. Phys. A-Mater. Sci. Process., 80, 1451 (2005)
Zheng XG, Taniguchi K, Takahashi A, Lie Y, Xu CN, Appl. Phys. Lett., 85, 1728 (2004)
Li M, Schnablegger H, Mann S, Nature, 402, 393 (1999)
Patzke GR, Krumeich F, Nesper R, Angew. Chem.-Int. Edit., 41, 2446 (2002)
Chen A, Long H, Li X, Yang G, Lu P, Vacuum, 83, 927 (2009)
Watson IM, Atwood MP, Cumberbatch TJ, Thin Solid Films, 251(1), 51 (1994)
Kawaguchi K, Kita R, Nishiyama M, Morishita T, J. Cryst. Growth, 143, 221 (1994)
Pierson JF, Thobor-Keck A, Billard A, Appl. Surf. Sci., 210(3-4), 359 (2003)
Bae HY, Choi GM, Sens. Actuators B-Chem., 55, 47 (1999)
Jundale D, Pawar S, Chougule M, Godse P, Patil S, Raut B, Sen S, Patil V, J. Sens. Technol., 1, 36 (2011)
Naisbitt SC, Pratt KFE, Williams DE, Parkin IP, Sens. Actuators B-Chem., 114, 969 (2006)
Solis JL, Lantto V, Sens. Actuators B-Chem., 48, 322 (1998)
Jiles D, Introduction to the Electronic Properties of Materials, Chapman & Hall, London, UK, 1993.
Park SJ, Kim H, Kim D, Korean J. Mater. Res., 24(1), 19 (2014)
Scott RWJ, Yang SM, Chabanis G, Coombs N, Williams DE, Ozin GA, Adv. Mater., 13(19), 1468 (2001)
Kim OK, Kim H, Kim D, Korean J. Mater. Res., 22(5), 237 (2012)
Ahlers S, Muller G, Doll T, Encyclopedia of Sensors, p. 413, ed. by Grimes CA, Dickey EC, Pishko MV, American Scientific Publishers (2006).

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[2] Seiyama T, Kato A, Fujishi K, Nagatani M, Anal. Chem., 34, 1502 (1962)

[3] Fine GF, Cavanagh LM, Afonja A, Bibions R, Sensors, 10, 5469 (2010)

[4] Sauter D, Weimar U, Noetzel G, Mitrovics J, Gopel W, Sens. Actuators B-Chem., 69, 1 (2000)

[5] Min Y, Tuller HL, Palzer S, Wollenstein J, Bottner H, Sens. Actuators B-Chem., 93, 435 (2003)

[6] Gao T, Wang TH, Appl. Phys. A-Mater. Sci. Process., 80, 1451 (2005)

[7] Zheng XG, Taniguchi K, Takahashi A, Lie Y, Xu CN, Appl. Phys. Lett., 85, 1728 (2004)

[8] Li M, Schnablegger H, Mann S, Nature, 402, 393 (1999)

[9] Patzke GR, Krumeich F, Nesper R, Angew. Chem.-Int. Edit., 41, 2446 (2002)

[10] Chen A, Long H, Li X, Yang G, Lu P, Vacuum, 83, 927 (2009)

[11] Watson IM, Atwood MP, Cumberbatch TJ, Thin Solid Films, 251(1), 51 (1994)

[12] Kawaguchi K, Kita R, Nishiyama M, Morishita T, J. Cryst. Growth, 143, 221 (1994)

[13] Pierson JF, Thobor-Keck A, Billard A, Appl. Surf. Sci., 210(3-4), 359 (2003)

[14] Bae HY, Choi GM, Sens. Actuators B-Chem., 55, 47 (1999)

[15] Jundale D, Pawar S, Chougule M, Godse P, Patil S, Raut B, Sen S, Patil V, J. Sens. Technol., 1, 36 (2011)

[16] Naisbitt SC, Pratt KFE, Williams DE, Parkin IP, Sens. Actuators B-Chem., 114, 969 (2006)

[17] Solis JL, Lantto V, Sens. Actuators B-Chem., 48, 322 (1998)

[18] Jiles D, Introduction to the Electronic Properties of Materials, Chapman & Hall, London, UK, 1993.

[19] Park SJ, Kim H, Kim D, Korean J. Mater. Res., 24(1), 19 (2014)

[20] Scott RWJ, Yang SM, Chabanis G, Coombs N, Williams DE, Ozin GA, Adv. Mater., 13(19), 1468 (2001)

[21] Kim OK, Kim H, Kim D, Korean J. Mater. Res., 22(5), 237 (2012)

[22] Ahlers S, Muller G, Doll T, Encyclopedia of Sensors, p. 413, ed. by Grimes CA, Dickey EC, Pishko MV, American Scientific Publishers (2006).