Journal of Materials Science, Vol.32, No.5, 1187-1193, 1997
Oxidation of Silicon-Nitride Under Standard Air or Microwave-Excited Air at High-Temperature and Low-Pressure
During the atmospheric re-entry of space shuttles, the thermal constraints due to the hypersonic velocity can lead to very extensive damage on materials of the protective heat shield (oxidation; thermal shock, etc.). In order to test the oxidation resistance of such materials, we have realized an experimental set-up called MESOX which associates a concentrated radiation solar furnace and a microwave generator. The maximal heat flux is 4.5 MW m(-2), and the temperature ranges up to 2500 K. The total pressure is in the range 10(2)-10(4) Pa. For silicon-based ceramics, it is necessary to have a good knowledge of the conditions for the existence of a protective silica layer. The determination of the transition between passive and active oxidation is done, in the case of sintered silicon nitride, under standard and microwave-excited air.
Keywords:TO-PASSIVE TRANSITION;SIO2-SI3N4 INTERFACE;ACTIVE OXIDATION;OXYGEN;SI3N4;CARBIDE;PLASMA;ENERGY;AUGER;LINE