Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of short-and long-channel CNTFETs. While for TLM special CNT test structures are mandatory, standard electrical device characteristics are sufficient for the Y-function methods. The methods have been applied to CNTFETs with low and high channel resistance. It turned out that the standard Y-function method fails to deliver the correct contact resistance in case of a relatively high channel resistance compared to the contact resistances. A physics-based validation is also given for the application of these methods based on applying traditional Si MOSFET theory to quasi-ballistic CNTFETs. (C) 2016 Elsevier Ltd. All rights reserved.