화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Korean Journal of Chemical Engineering, Vol.34, No.12, 3214-3219, December, 2017
DOI10.1007/s11814-017-0225-8  Export Citation
Expanding depletion region via doping: Zn-doped Cu2O buffer layer in Cu2O photocathodes for photoelectrochemical water splitting
Kangha Lee1, Cheol-Ho Lee1, 2, Jun Young Cheong3, Seokwon Lee1, Il-Doo Kim3, Han-Ik Joh2, 4, and Doh Chang Lee1, †
  • 1Department of Chemical and Biomolecular Engineering (BK21+ Program), KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
  • 2Carbon Convergence Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Wanju, Jeollabukdo 55324, Korea
  • 3Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
  • 4Department of Extreme Energy Engineering, Konkuk University, Seoul 27478, Korea
E-mail:
We report photoelectrochemical hydrogen evolution reaction using a Cu2O-based photocathode with a layer doped with Zn ions. The doping results in the shift of the onset flat-band potential of the photocathode, likely a consequence of maximized band-bending in the Cu2O/Zn : Cu2O heterojunction. Systematic electrochemical analysis reveals that expansion of depletion region is responsible for the enhanced photoelectrochemical performance, e.g., the increase of photocurrent and reduced internal resistance.
Keywords:Cu2O;Zn-doped Cu2O;Photocathode;Water Splitting;Photoelectrochemistry
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