We report on the structural, optical and optoelectronic properties of CeO2 films grown by pulsed laser deposition for its possible use as optoelectronic switch device. (111) oriented highly uniform nano-structured CeO2 films of about 100 nm were grown on quartz substrate at different temperatures for optimization of growth parameters. A slight variation in the optical band gap was observed for average 60% optically transparent films deposited at different temperatures. Enhanced photo resistive effects were recorded for all the films excited by UV light (254 nm) of intensity 3.6 mW/cm(2). Optoelectronic parameters such as photo resistivity, responsivity, detectivity and dynamic responses were optimized for the CeO2 films grown at different temperatures.