화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.80, 265-272, December, 2019
DOI10.1016/j.jiec.2019.08.004  Export Citation
High-performance CH3NH3PbI3 inverted planar perovskite solar cells via ammonium halide additives
Muhammad Jahandar1, 2, Nasir Khan2, 3, Muhammad Jahankhan2, 3, Chang Eun Song2, 3, †, Hang Ken Lee3, Sang Kyu Lee1, 2, Won Suk Shin1, 2, Jong-Cheol Lee1, 2, Sang Hyuk Im4, †, and Sang-Jin Moon1, 2, †
  • 1Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong, Daejeon 34114, Republic of Korea
  • 2Advanced Materials and Chemical Engineering, University of Science and Technology (UST), 217 Gajeongro, Yuseong, Daejeon 34113, Republic of Korea
  • 3Energy Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong, Daejeon 34114, Republic of Korea
  • 4Department of Chemical and Biological Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-713, Republic of Korea
E-mail:, ,
Organic-inorganic hybrid perovskites have recently attracted substantial attention as a top candidate for use as light-absorbing materials in high-efficiency, low-cost and solution-processable photovoltaic devices owing to their excellent optoelectronic properties. Here, we fabricated inverted planar perovskite solar cells by incorporating small amounts of ammonium halide NH4X (X = F, Cl, Br, I) additives into a CH3NH3PbI3 (MAPbI3) perovskite solution. A compact and uniform perovskite absorber layer with large perovskite crystalline grains is realized by simply incorporating small amounts of additives and by using an anti-solvent engineering technique to control the nucleation and crystal growth of perovskite. The enlarged perovskite grain size with a reduced density of the grain boundaries and improved crystallinity results in fewer charge carrier recombinations and a reduced defect density, leading to enhanced device efficiency (NH4F: 14.88 ± 0.33%, NH4Cl: 16.63 ± 0.21%, NH4Br: 16.64 ± 0.35%, and NH4I: 17.28 ± 0.15%) compared to that of a reference MAPbI3 device (Ref.: 12.95 ± 0.48%) and greater device stability. This simple technique involving the introduction of small amounts of ammonium halide additives to regulate the nucleation and crystal growth of perovskite films translates into highly reproducible enhanced device performance.
Keywords:CH3NH3PbI3perovskite;Inverted planar structure;Ammonium halide additives;Anti-Solvent engineering;Perovskite grain size
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