화학공학소재연구정보센터
홈 로그인 로그아웃 연락처 사이트맵
Journal of Industrial and Engineering Chemistry, Vol.88, 111-116, August, 2020
DOI10.1016/j.jiec.2020.03.030  Export Citation
Highly aligned indium zinc oxide nanowire-based artificial synapses with low-energy consumption
Lu Liu, Binbin Cui, Wenlong Xu, Yao Ni, Shuo Zhang, and Wentao Xu†
  • Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China
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Emulating neural activities at individual synapse level has recently attracted tremendous attention. Here, we demonstrate design and fabrication of the first digitally aligned nanowire (NW)-based three-terminal synaptic transistor. The highly-aligned and individually-position-controlled long continuous indium zinc oxide (IZO) NW arrays were directly printed on a large area with low cost using a special electrohydrodynamic nanowire printing (e-NWP) process. The NWs printed by e-NWP with a diameter of 250 nm emulated the structure of nerve fibers. The device emulates plasticity of biological synapses and showed remarkable advantages in energy consumption compared with previous reports. Unique band-edge modulation along the NW axial direction underlies makes excellent electrical properties of the device. This approach paves the way to easy fabrication of printed-NW-based artificial neural networks.
Keywords:Synapses transistor;Electrohydrodynamic nanowire printing;Nanowire;Low energy consumption;Indium zinc oxide
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