Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology A, Vol.13, No.3, 853-858, 1995 DOI10.1116/1.579841 Export Citation Substrate Bias Effects in High-Aspect-Ratio SiO2 Contact Etching Using an Inductively-Coupled Plasma Reactor Westerheim AC, Labun AH, Dubash JH, Arnold JC, Sawin HH, Yuwang V Keywords:ION-BOMBARDMENT Please enable JavaScript to view the comments powered by Disqus.
