Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.1, 27-33, 1995 DOI10.1116/1.587980 Export Citation Plasma-Induced Damage of GaAs PN-Junction Diodes Using Electron-Cyclotron-Resonance Generated Cl-2/Ar, BCl3/Ar, Cl-2/BCl3/Ar, and Sicl4/Ar Plasmas Shul RJ, Lovejoy ML, Hetherington DL, Rieger DJ, Klem JF, Melloch MR Keywords:ETCHING INDUCED DAMAGE;SURFACE DAMAGE;ION;CH4/H2/AR;INP Please enable JavaScript to view the comments powered by Disqus.
