Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.3, 928-935, 1995 DOI10.1116/1.588208 Export Citation Characterization and Modeling of Sidewall Defects in Selective Epitaxial-Growth of Silicon Bashir R, Neudeck GW, Haw Y, Kvam EP Keywords:ELECTRICAL-PROPERTIES;LATERAL OVERGROWTH;TECHNOLOGY;SIO2;MOS Please enable JavaScript to view the comments powered by Disqus.
