Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.13, No.3, 1358-1363, 1995 DOI10.1116/1.587853 Export Citation Single-Crystal Epitaxial Ge-Based Ohmic Contact Structure for III-V Nanoelectronic and Mesoscopic Devices Dubey M, Jones KA, Casas LM, Eckart D, Pfeffer RL Keywords:NORMAL-GAAS;N-GAAS Please enable JavaScript to view the comments powered by Disqus.
